TYSEMI KDD3680

Transistors
IC
SMD Type
Product specification
KDD3680
+0.15
6.50-0.15
+0.2
5.30-0.2
Features
Unit: mm
+0.1
2.30-0.1
+0.8
0.50-0.7
Fast switching speed
High performance trench technology for extremely low RDS(ON)
2.3
+0.1
0.60-0.1
0.127
max
+0.28
1.50-0.1
+0.1
0.80-0.1
+0.15
0.50-0.15
+0.2
9.70-0.2
@ VGS = 6 V
+0.15
4.60-0.15
High power and current handling capability
3.80
RDS(ON) = 51m
Low gate charge (38 nC typical)
+0.15
5.55-0.15
@ VGS = 10 V
+0.25
2.65-0.1
25 A, 100 V. RDS(ON) = 46m
+0.15
1.50-0.15
TO-252
1. Gate
2. Drain
3. Source
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Drain to Source Voltage
VDSS
100
V
Gate to Source Voltage
VGS
20
V
Drain Current Continuous (Note 1)
ID
Drain Current Pulsed
Power dissipation @ TC=25
(Note 1)
Power dissipation @ Ta=25
(Note 1a)
Power dissipation @ Ta=25
25
A
100
A
68
PD
3.8
W
1.6
(Note 1b)
Operating and Storage Temperature
Unit
TJ, TSTG
-55 to 175
Thermal Resistance Junction to Case
R
JC
2.2
/W
Thermal Resistance Junction to Ambient
R
JA
96
/W
http://www.twtysemi.com
[email protected]
4008-318-123
1 of 2
Transistors
IC
SMD Type
Product specification
KDD3680
Electrical Characteristics Ta = 25
Parameter
Symbol
Single Pulse Drain-Source Avalanche Energy
Maximum Drain-Source Avalanche Current
Drain-Source Breakdown Voltage
W DSS
IAR
BVDSS
Breakdown Voltage Temperature Coefficient
Testconditons
Max
Unit
VDD = 50 V, ID = 6.1A (Not 1)
245
mJ
( Not 1)
6.1
A
VGS = 0 V, ID = 250
ID = 250
Min
Typ
100
A
V
-101
A, Referenced to 25
mV/
Zero Gate Voltage Drain Current
IDSS
VDS = 80 V, VGS = 0 V
10
A
Gate-Body Leakage, Forward
IGSSF
VGS = 20 V, VDS = 0 V
100
nA
Gate-Body Leakage, Reverse
IGSSR
VGS = -20 V, VDS = 0 V
-100
nA
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250
4
V
Gate Threshold Voltage Temperature
Coefficient
ID = 250
2
A
2.4
-6.5
A, Referenced to 25
VGS = 10 V, ID = 6.1A
Static Drain-Source On-Resistance
RDS(on)
On-State Drain Current
VGS = 10 V, ID = 6.1 A,TJ = 125
61
92
34
51
VGS = 10 V, VDS = 5 V
VDS = 5 V, ID = 6.1 A
Forward Transconductance
gFS
Ciss
Output Capacitance
Coss
46
VGS = 6 V, ID =5.8 A,
ID(on)
Input Capacitance
32
mV/
25
m
A
25
S
1735
pF
176
pF
VDS = 50 V, VGS = 0 V,f = 1.0 MHz
Reverse Transfer Capacitance
Crss
53
Turn-On Delay Time
td(on)
14
25
ns
Turn-On Rise Time
tr
8.5
17
ns
Turn-Off Delay Time
td(off)
63
94
ns
21
34
ns
38
53
nC
Turn-Off Fall Time
tf
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Maximum Continuous Drain-Source Diode
Forward Current
Drain-Source Diode Forward Voltage
http://www.twtysemi.com
VDD = 50 V, ID = 1 A,VGS = 10 V, RGEN
= 10
VDS = 50 V, ID = 6.1 A,VGS = 10 V
(Note 2)
8.1
nC
9.2
nC
IS
VSD
VGS = 0 V, IS = 2.9 A (Not 2)
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0.73
4008-318-123
pF
2.9
A
1.3
V
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