Transistors IC SMD Type Product specification KDD3680 +0.15 6.50-0.15 +0.2 5.30-0.2 Features Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Fast switching speed High performance trench technology for extremely low RDS(ON) 2.3 +0.1 0.60-0.1 0.127 max +0.28 1.50-0.1 +0.1 0.80-0.1 +0.15 0.50-0.15 +0.2 9.70-0.2 @ VGS = 6 V +0.15 4.60-0.15 High power and current handling capability 3.80 RDS(ON) = 51m Low gate charge (38 nC typical) +0.15 5.55-0.15 @ VGS = 10 V +0.25 2.65-0.1 25 A, 100 V. RDS(ON) = 46m +0.15 1.50-0.15 TO-252 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Drain to Source Voltage VDSS 100 V Gate to Source Voltage VGS 20 V Drain Current Continuous (Note 1) ID Drain Current Pulsed Power dissipation @ TC=25 (Note 1) Power dissipation @ Ta=25 (Note 1a) Power dissipation @ Ta=25 25 A 100 A 68 PD 3.8 W 1.6 (Note 1b) Operating and Storage Temperature Unit TJ, TSTG -55 to 175 Thermal Resistance Junction to Case R JC 2.2 /W Thermal Resistance Junction to Ambient R JA 96 /W http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Transistors IC SMD Type Product specification KDD3680 Electrical Characteristics Ta = 25 Parameter Symbol Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current Drain-Source Breakdown Voltage W DSS IAR BVDSS Breakdown Voltage Temperature Coefficient Testconditons Max Unit VDD = 50 V, ID = 6.1A (Not 1) 245 mJ ( Not 1) 6.1 A VGS = 0 V, ID = 250 ID = 250 Min Typ 100 A V -101 A, Referenced to 25 mV/ Zero Gate Voltage Drain Current IDSS VDS = 80 V, VGS = 0 V 10 A Gate-Body Leakage, Forward IGSSF VGS = 20 V, VDS = 0 V 100 nA Gate-Body Leakage, Reverse IGSSR VGS = -20 V, VDS = 0 V -100 nA Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 4 V Gate Threshold Voltage Temperature Coefficient ID = 250 2 A 2.4 -6.5 A, Referenced to 25 VGS = 10 V, ID = 6.1A Static Drain-Source On-Resistance RDS(on) On-State Drain Current VGS = 10 V, ID = 6.1 A,TJ = 125 61 92 34 51 VGS = 10 V, VDS = 5 V VDS = 5 V, ID = 6.1 A Forward Transconductance gFS Ciss Output Capacitance Coss 46 VGS = 6 V, ID =5.8 A, ID(on) Input Capacitance 32 mV/ 25 m A 25 S 1735 pF 176 pF VDS = 50 V, VGS = 0 V,f = 1.0 MHz Reverse Transfer Capacitance Crss 53 Turn-On Delay Time td(on) 14 25 ns Turn-On Rise Time tr 8.5 17 ns Turn-Off Delay Time td(off) 63 94 ns 21 34 ns 38 53 nC Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage http://www.twtysemi.com VDD = 50 V, ID = 1 A,VGS = 10 V, RGEN = 10 VDS = 50 V, ID = 6.1 A,VGS = 10 V (Note 2) 8.1 nC 9.2 nC IS VSD VGS = 0 V, IS = 2.9 A (Not 2) [email protected] 0.73 4008-318-123 pF 2.9 A 1.3 V 2of 2