IC IC SMD Type Dual N-Channel Logic Level PowerTrench MOSFET KDS6910 Features 7.5 A, 30 V. RDS(ON) = 13m RDS(ON) = 17m @ VGS = 10 V @ VGS =4.5V Low gate charge Fast switching speed High performance trench technology for extremely low RDS(ON) High power and current handling capability Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to Source Voltage VDSS 30 V Gate to Source Voltage VGS Drain Current Continuous (Note 1a) 20 V 7.5 A Drain Current Pulsed 20 A Power Dissipation for Single Operation (Note 1a) 1.6 Power Dissipation for Single Operation (Note 1b) ID PD 1 TJ, TSTG -55 to 175 Power Dissipation for Single Operation (Note 1c) Operating and Storage Temperature W 0.9 Thermal Resistance Junction to Case (Note 1) R JC 40 /W Thermal Resistance Junction to Ambient (Note 1a) R JA 78 /W www.kexin.com.cn 1 IC IC SMD Type KDS6910 Electrical Characteristics Ta = 25 Parameter Drain-Source Breakdown Voltage Symbol BVDSS Breakdown Voltage Temperature Coefficient Testconditons VGS = 0 V, ID = 250 ID = 250 A Min Max 30 V 28 A, Referenced to 25 Unit mV/ VDS = 24 V, VGS = 0 V 1 VDS = 24 V, VGS = 0 V,TJ = 55 10 IGSSF VGS = 20 V, VDS = 0 V 100 nA Gate-Body Leakage, Reverse IGSSR VGS = -20 V, VDS = 0 V -100 nA Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 3 V Zero Gate Voltage Drain Current Gate-Body Leakage, Forward IDSS Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance ID = 250 RDS(on) A 1 On-State Drain Current 10.6 13 VGS = 4.5 V, ID = 6.5 A 13 17 14.5 20 ID(on) VGS = 10 V, VDS = 5V gFS VDS = 5 V, ID = 7.5A Input Capacitance Ciss Coss Reverse Transfer Capacitance Crss Gate Resistance RG VDS = 15 V, VGS = 0 V,f = 1.0 MHz VGS = 15 mV, f = 1.0 MHz A mV/ VGS = 10 V, ID =7.5 A Forward Transconductance Output Capacitance 1.8 -4.7 A, Referenced to 25 VGS = 10 V, ID =7.5 A,TJ = 125 20 m A 36 S 1130 pF 300 pF 100 pF 2.4 Turn-On Delay Time td(on) 9 18 ns Turn-On Rise Time tr 5 10 ns Turn-Off Delay Time td(off) 26 42 ns Turn-Off Fall Time Total Gate Charge at Vgs=10V Total Gate Charge Vgs=5V tf 7 14 ns 17 24 nC 9 13 nC Qg Gate-Source Charge Qgs Qgd Drain-Source Diode Forward Voltage VDD = 15 V, ID = 1 A,VGS = 10 V, RGEN = 6 Qg(TOT) Gate-Drain Charge Maximum Continuous Drain-Source Diode Forward Current 2 Typ VDS = 15 V, ID = 7.5 A(Note 2) nC 2.7 nC IS VSD 1.3 VGS = 0 V, IS = 1.3 A (Not 2) Diode Reverse Recovery Time trr IF =7.5A Diode Reverse Recovery Charge Qrr diF/dt = 100 A/ www.kexin.com.cn 3.1 s 1.2 A V 24 nS 13 nC