Transistors IC SMD Type 30V N-Channel Power Trench MOSFET KDD6030L @ VGS = 4.5 V +0.2 9.70-0.2 +0.1 0.80-0.1 Fast switching speed High performance trench technology for extremely low RDS(ON) 2.3 +0.1 0.60-0.1 +0.15 4.60-0.15 0.127 max 3.80 RDS(ON) = 21m Low gate charge +0.8 0.50-0.7 +0.15 5.55-0.15 @ VGS = 10 V +0.25 2.65-0.1 12 A, 30 V. RDS(ON) = 14.5m Unit: mm +0.1 2.30-0.1 +0.28 1.50-0.1 Features +0.15 0.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 +0.15 1.50-0.15 TO-252 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Drain to Source Voltage Parameter VDSS 30 V Gate to Source Voltage VGS Drain Current Continuous @TC=25 @Ta=25 Drain Current Pulsed (Note 3) ID (Note 1a) (Note 1a) Power dissipation @ TC=25 (Note 3) Power dissipation @ Ta=25 (Note 1a) Power dissipation @ Ta=25 (Note 1b) V 50 A 12 A 100 A 56 PD 3.2 W 1.5 Operating and Storage Temperature Thermal Resistance Junction to Case 20 TJ, TSTG (Note 1) -55 to 175 R JC 2.7 /W Thermal Resistance Junction to Ambient (Note 1a) R JA 45 /W Thermal Resistance Junction to Ambient (Note 1b) R JA 96 /W www.kexin.com.cn 1 Transistors IC SMD Type KDD6030L Electrical Characteristics Ta = 25 Parameter Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current Drain-Source Breakdown Voltage Symbol Testconditons EAS Single Pulse, VDD = 15 V, ID= 12A (Note 2) IAR ( Not 2) BVDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Gate Threshold Voltage ID = 250 VDS = 24 V, VGS = 0 V IGSS VGS = VGS(th) On-State Drain Current 1 1 A 1.9 nA 3 V -5 mV/ VGS = 10 V, ID =12 A,TJ = 125 11.4 25 50 VDS = 15 V, VGS = 0 V,f = 1.0 MHz VGS = 15 mV, f = 1.0 MHz A 100 21 Ciss RG mV/ 14.5 Input Capacitance Gate Resistance A 9.9 VDS = 10 V, ID = 12 A Crss 12 7.7 VGS = 10 V, VDS = 5 V Coss mJ VGS = 4.5 V, ID = 10A gFS Output Capacitance 100 VGS = 10 V, ID = 12A ID(on) Reverse Transfer Capacitance Unit 24 A, Referenced to 25 Forward Transconductance m A 47 S 1230 pF 325 pF 150 pF 1.5 pF Turn-On Delay Time td(on) 10 19 ns Turn-On Rise Time tr 7 13 ns Turn-Off Delay Time td(off) 29 46 ns VDD = 15 V, ID = 1 A,VGS = 10 V, RGEN = 6 (Note 2) Turn-Off Fall Time tf 12 21 ns Total Gate Charge Qg 13 28 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage 2 RDS(on) Max V 20 V, VDS = 0 V VDS = VGS, ID = 250 ID = 250 Typ 30 A A, Referenced to 25 IDSS Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance VGS = 0 V, ID = 250 Min 3.5 nC 5.1 nC IS VSD Diode Reverse Recovery Time trr Diode Reverse Recovery Charge Qrr www.kexin.com.cn VDS = 15 V, ID = 12 A,VGS = 5 V (Note 2) VGS = 0 V, IS = 2.9 A (Not 2) IF = 12 A, diF/dt = 100 A/ s 0.76 2.7 A 1.2 V 24 nS 13 nC