Transistors IC SMD Type Complementary Enhancement Mode MOS Transistors KHC2300 Features High-speed switching No secondary breakdown. Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage Gate to Source Voltage N-Channel P-Channel Unit VDSS 300 -300 V 20 20 V ID 340 -235 A IDM 14 -0.9 A VGS Drain Current Ts = 80 peak drain current *2 total power dissipation Symbol *1 1.6 Ts = 80 ; *3 Tamb = 25 ;*4 Ptot Tamb = 25 ; * 5 Tamb = 25 operating junction temperature thermal resistance from junction to soldering point 0.9 W 1.2 ; *6 storage temperature 1.8 Tstg -55 to 150 Tj -55 to 150 Rth j-s 43 K/W *1. Ts is the temperature at the soldering point of the drain leads. *2. Pulse width and duty cycle limited by maximum junction temperature. *3. Maximum permissible dissipation per MOS transistor. (So both devices may be loaded up to 1.6 W at the same time). *4. Maximum permissible dissipation per MOS transistor. Value based on a printed-circuit board with an Rth a-tp (ambient to tie-point) of 27.5 K/W. *5. Maximum permissible dissipation per MOS transistor. Value based on a printed-circuit board with an Rth a-tp (ambient to tie-point) of 90 K/W. *6. Maximum permissible dissipation if only one MOS transistor dissipates. Value based on a printed-circuit board with an Rth a-tp (ambient to tie-point) of 90 K/W. www.kexin.com.cn 1 Transistors IC SMD Type KHC2300 Electrical Characteristics Ta = 25 Parameter drain-source breakdown voltage V(BR)DSS gate-source threshold voltage VGSth drain-source leakage current IDSS gate leakage current drain-source on-state resistance input capacitance IGSS RDSon Ciss output capacitance Coss reverse transfer capacitance Crss total gate charge gate-source charge gate-drain charge turn-on time turn-off time 2 Symbol www.kexin.com.cn QG QGS QGD ton toff Testconditons Type Min Typ Max Unit N-Ch 300 V A P-Ch -300 V VGS = VDS; ID = 1 mA N-Ch 0.8 2 V VGS = VDS; ID = -1 mA P-Ch -0.8 -2 V VGS = 0; VDS = 240 V N-Ch 100 nA VGS = 0; VDS = -240 V P-Ch -100 VGS = 0; ID = 10 VGS = 0; ID = -10 VGS = A 20 V; VDS = 0 nA N-Ch 100 nA P-Ch 100 nA VGS = 10 V; ID = 170m A N-Ch 8 VGS = -10 V; ID = -115m A P-Ch 17 VGS = 0; VDS = 50 V; f = 1 MHz N-Ch 57 VGS = 0; VDS = -50 V; f = 1 MHz P-Ch 45 VGS = 0; VDS = 50 V; f = 1 MHz N-Ch 15 VGS = 0; VDS = -50 V; f = 1 MHz P-Ch 15 VGS = 0; VDS = 50 V; f = 1 MHz N-Ch 2.6 pF pF VGS = 0; VDS = -50 V; f = 1 MHz P-Ch 3 pF VGS = 10 V; VDS = 50 V; ID = 170m A N-Ch 2097 nC VGS = 10 V; VDS = -50 V; ID =-115m A P-Ch 2137 nC VGS = 10 V; VDS = 50 V; ID = 170m A N-Ch 75 nC VGS = -10 V; VDS = -50 V; ID = -115m A P-Ch 68 nC VGS = 10 V; VDS = 50 V; ID = 170m A N-Ch 527 nC VGS = -10 V; VDS = -50 V; ID = -115m A P-Ch 674 VGS =0 to 10 V; VDD=50V;ID=170mA N-Ch 2.5 nC 10 ns VGS = 0 to -10 V; VDD = -50 V;ID = -115mA P-Ch 4 10 ns VGS=10 to 0 V;VDD=50V;ID=170mA N-Ch 17 30 ns VGS=-10 to 0 V;VDD=-50V;ID=-115mA P-Ch 25 35 ns