Transistors IC SMD Type N-Channel Logic Level Enhancement Mode Field Effect Transistor KDB6030L TO-263 1 .2 7 -0+ 0.1.1 Features +0.2 4.57-0.2 Low Crss (typical 175 pF). 5 .2 8 -0+ 0.2.2 Fast switching speed. 0.1max +0.1 1.27-0.1 +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 1 5 .2 5 -0+ 0.2.2 5 .6 0 @ VGS = 4.5 V Low gate charge (typical 34 nC). 2 .5 4 -0+ 0.2.2 RDS(ON) = 0.020 @ VGS = 10 V +0.1 1.27-0.1 8 .7 -0+ 0.2.2 52A, 30 V. RDS(ON) = 0.0135 Unit: mm +0.2 0.4-0.2 gate 11Gate drain 22Drain source 33Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to Source Voltage VDSS 30 V Gate to Source Voltage VGS Drain Current Continuous ID Drain Current Pulsed Power dissipation @ TC=25 Derate above 25 Operating and Storage Temperature 20 V 52 A 156 A PD 75 PD 0.5 TJ, TSTG -65 to 175 W W/ Thermal Resistance Junction to Case R JC 2 /W Thermal Resistance Junction to Ambient R JA 62.5 /W www.kexin.com.cn 1 Transistors IC SMD Type KDB6030L Electrical Characteristics Ta = 25 Parameter Symbol Single Pulse Drain-Source Avalanche Energy * W DSS Maximum Drain-Source Avalanche Current Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 ID = 250 Gate-Body Leakage, Forward IGSSF Gate-Body Leakage, Reverse IGSSR Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 V mV/ 100 nA -100 nA 3 V A 1 1.6 -4 A, Referenced to 25 mV/ VGS = 10 V, ID = 26 A 0.0095 0.0135 VGS = 10 V, ID = 26 A,TJ = 125 0.014 0.023 0.015 0.02 On-State Drain Current ID(on) VGS = 4.5 V, VDS = 10 V 15 Coss A VGS = -20 V, VDS = 0 V 60 Output Capacitance 21 VGS = 20 V, VDS = 0 V VGS = 10 V, VDS = 10 V gFS mJ A VGS = 4.5 V, ID =21 A, Ciss 150 37 ID(on) Forward Transconductance Unit 30 On-State Drain Current Input Capacitance Max 10 ID = 250 RDS(on) A A, Referenced to 25 VDS = 24 V, VGS = 0 V Gate Threshold Voltage Temperature Coefficient VDS = 10 V, ID = 26 A VDS = 15 V, VGS = 0 V,f = 1.0 MHz m A 37 S 1230 pF 640 pF Reverse Transfer Capacitance Crss 175 Turn-On Delay Time td(on) 7.6 15 ns Turn-On Rise Time tr 150 210 ns Turn-Off Delay Time td(off) 29 46 ns 17 27 ns 34 46 nC Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Maximum Continuous Drain–Source Diode Forward Current * VDD = 15 V, ID = 52 A,VGS = 10 V, RGEN = 24 * VDS = 12 V, ID = 26A,VGS = 10 V * pF 6 nC 8 nC IS 52 A Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 26 A * 0.91 1.3 V Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 26 A *TJ=125 0.8 1.2 V * Pulse Test: Pulse Width 2 Typ VDD = 15 V, ID = 21A IDSS Static Drain-Source On-Resistance Min IAR BVDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Testconditons www.kexin.com.cn 300 s, Duty Cycle 2.0%