Transistors IC SMD Type 250V N-Channel Enhancement Mode MOSFET KVN4525Z SOT-89 Features Unit: mm 4.50 1.50 +0.1 -0.1 High voltage +0.1 -0.1 +0.1 1.80-0.1 +0.1 2.50-0.1 Fast switching speed 1 3 2 +0.1 0.53-0.1 +0.1 0.48-0.1 Low threshold +0.1 0.44-0.1 +0.1 0.80-0.1 Low gate drive +0.1 4.00-0.1 Low on-resistance +0.1 0.40-0.1 +0.1 2.60-0.1 SOT89 package +0.1 3.00-0.1 1. Source Base 1. Collector 2.2. Drain Emiitter 3.3. Gate Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDSS 250 V Gate Source Voltage VGS 40 V Continuous Drain Current (VGS=10V; TA=25 )*1 ID 240 mA (VGS=10V; TA=70 )*1 ID 192 mA IDM 1.44 A IS 1.1 A ISM 1.44 A Pulsed Drain Current *3 Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Power Dissipation at TA=25 *1 PD Linear Derating Factor Operating and Storage Temperature Range Tj:Tstg 1.2 W 9.6 mW/ -55 to +150 Junction to Ambient *1 R JA 103 /W Junction to Ambient*2 R JA 50 /W *1 For a device surface mounted on 25mm X 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions *2 For a device surface mounted on FR4 PCB measured at t 5 secs. *3 Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. www.kexin.com.cn 1 Transistors IC SMD Type KVN4525Z Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Drain-Source Breakdown Voltage V(BR)DSS Zero Gate Voltage Drain Current IDSS VDS=250V, VGS=0V Gate-Body Leakage IGSS VGS= 40V, VDS=0V Gate-Source Threshold Voltage VGS(th) Static Drain-Source On-State Resistance *1 RDS(on) Forward Transconductance *3 gfs Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-On Delay Time td(on) Rise Time tr Turn-Off Delay Time ID=1mA, VGS=0V 250 285 1 ID=1mA, VDS= VGS 0.8 1.4 Max Unit 500 nA V 100 1.8 VGS=10V, ID=500mA 5.6 8.5 VGS=4.5V, ID=360mA 5.9 9.0 VGS=2.4V, ID=20mA 6.4 9.5 VDS=10V,ID=0.3A 0.3 nA V 475 ms 72 pF 11 pF 3.6 pF VDD =50V, ID=-200mA 1.25 ns RG=6.0 , RD=4.4 1.70 ns 11.40 ns VDS=25 V, VGS=0V,f=1MHz *2,3 tf 3.5 Total Gate Charge Qg 2.6 3.65 nC Gate-Source Charge Qgs 0.2 0.28 nC VDS=25V,VGS=10V,ID=360mA *2,3 0.5 Gate Drain Charge Qgd Diode Forward Voltage *1 VSD Reverse Recovery Time *3 trr Tj=25 , IF=360mA, Reverse Recovery Charge *3 Qrr di/dt=100A/ s 2% . *2 Switching characteristics are independent of operating junction temperature. *3 For design aid only, not subject to production testing. Marking Marking N52 www.kexin.com.cn ns 0.70 nC 0.97 V 186 260 ns 34 48 nC Tj=25 , IS=360mA,VGS=0V *1 Measured under pulsed conditions. Width=300 s. Duty cycle 2 Typ 35 td(off) Fall Time Min