KEXIN KVN4525Z

Transistors
IC
SMD Type
250V N-Channel Enhancement Mode MOSFET
KVN4525Z
SOT-89
Features
Unit: mm
4.50
1.50
+0.1
-0.1
High voltage
+0.1
-0.1
+0.1
1.80-0.1
+0.1
2.50-0.1
Fast switching speed
1
3
2
+0.1
0.53-0.1
+0.1
0.48-0.1
Low threshold
+0.1
0.44-0.1
+0.1
0.80-0.1
Low gate drive
+0.1
4.00-0.1
Low on-resistance
+0.1
0.40-0.1
+0.1
2.60-0.1
SOT89 package
+0.1
3.00-0.1
1. Source
Base
1.
Collector
2.2. Drain
Emiitter
3.3. Gate
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Drain-Source Voltage
VDSS
250
V
Gate Source Voltage
VGS
40
V
Continuous Drain Current (VGS=10V; TA=25 )*1
ID
240
mA
(VGS=10V; TA=70 )*1
ID
192
mA
IDM
1.44
A
IS
1.1
A
ISM
1.44
A
Pulsed Drain Current *3
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Power Dissipation at TA=25
*1
PD
Linear Derating Factor
Operating and Storage Temperature Range
Tj:Tstg
1.2
W
9.6
mW/
-55 to +150
Junction to Ambient *1
R
JA
103
/W
Junction to Ambient*2
R
JA
50
/W
*1 For a device surface mounted on 25mm X 25mm FR4 PCB with high coverage of
single sided 1oz copper, in still air conditions
*2 For a device surface mounted on FR4 PCB measured at t
5 secs.
*3 Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal
Impedance graph.
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1
Transistors
IC
SMD Type
KVN4525Z
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Drain-Source Breakdown Voltage
V(BR)DSS
Zero Gate Voltage Drain Current
IDSS
VDS=250V, VGS=0V
Gate-Body Leakage
IGSS
VGS= 40V, VDS=0V
Gate-Source Threshold Voltage
VGS(th)
Static Drain-Source On-State Resistance *1
RDS(on)
Forward Transconductance *3
gfs
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
ID=1mA, VGS=0V
250
285
1
ID=1mA, VDS= VGS
0.8
1.4
Max
Unit
500
nA
V
100
1.8
VGS=10V, ID=500mA
5.6
8.5
VGS=4.5V, ID=360mA
5.9
9.0
VGS=2.4V, ID=20mA
6.4
9.5
VDS=10V,ID=0.3A
0.3
nA
V
475
ms
72
pF
11
pF
3.6
pF
VDD =50V, ID=-200mA
1.25
ns
RG=6.0 , RD=4.4
1.70
ns
11.40
ns
VDS=25 V, VGS=0V,f=1MHz
*2,3
tf
3.5
Total Gate Charge
Qg
2.6
3.65
nC
Gate-Source Charge
Qgs
0.2
0.28
nC
VDS=25V,VGS=10V,ID=360mA *2,3
0.5
Gate Drain Charge
Qgd
Diode Forward Voltage *1
VSD
Reverse Recovery Time *3
trr
Tj=25 , IF=360mA,
Reverse Recovery Charge *3
Qrr
di/dt=100A/
s
2% .
*2 Switching characteristics are independent of operating junction temperature.
*3 For design aid only, not subject to production testing.
Marking
Marking
N52
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ns
0.70
nC
0.97
V
186
260
ns
34
48
nC
Tj=25 , IS=360mA,VGS=0V
*1 Measured under pulsed conditions. Width=300 s. Duty cycle
2
Typ
35
td(off)
Fall Time
Min