Transistors IC SMD Type Product specification KHC21025 Features High-speed switching No secondary breakdown Very low on-resistance. Absolute Maximum Ratings Ta = 25 Parameter Symbol N-Channel P-Channel Drain to Source Voltage VDSS 30 -30 Gate to Source Voltage VGS Drain Current Ts 80 peak drain current *1 total power dissipation 3.5 IDM 14 ;*3 -2.3 A -10 A 2 Ptot 1.3 ; *5 storage temperature W 1 Tamb = 25 ; * 4 Tamb = 25 V 2 Ts = 80 ; *2 Tamb = 25 V 20 20 ID Unit -65 to 150 Tstg 150 operating junction temperature Tj source current (DC) IS 1.5 -1.25 A ISM 6 -5 A Ts 80 peak pulsed source current *1 thermal resistance from junction to soldering point Rth j-s 35 K/W *1 Pulse width and duty cycle limited by maximum junction temperature. *2 Maximum permissible dissipation per MOS transistor. Both devices may be loaded up to 2 W at the same time. *3 Maximum permissible dissipation per MOS transistor. Device mounted on printed-circuit board with an Rth a-tp (ambient to tie-point) of 27.5 K/W. *4 Maximum permissible dissipation per MOS transistor. Device mounted on printed-circuit board with an Rth a-tp (ambient to tie-point) of 90 K/W. *5 Maximum permissible dissipation if only one MOS transistor dissipates. Device mounted on printed-circuit board with an Rth a-tp (ambient to tie-point) of 90 K/W. http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Transistors IC SMD Type Product specification KHC21025 Electrical Characteristics Ta = 25 Parameter drain-source breakdown voltage Symbol V(BR)DSS gate-source threshold voltage VGSth drain-source leakage current IDSS gate leakage current IGSS Testconditons IDon |yfs| input capacitance Ciss output capacitance Coss reverse transfer capacitance Crss total gate charge gate-source charge gate-drain charge turn-on time turn-off time source-drain diode forward voltage reverse recovery time http://www.twtysemi.com QG QGS QGD ton toff VSD trr Unit 30 V P-Ch -30 V VGS = VDS; ID = 1 mA N-Ch 1 2.8 V VGS = VDS; ID = -1 mA P-Ch -1 -2.8 V VGS = 0; VDS = 24 V N-Ch 100 nA VGS = 0; VDS = -24 V P-Ch -100 nA VGS = 20 V; VDS = 0 N-Ch 100 nA P-Ch 100 nA N-Ch VGS = 4.5 V; VDS = 5 V VGS = -10 V; VDS = -1 V P-Ch 3.5 VGS = -4.5 V; ID = - 0.5 A A 2 A -2.3 A -1 N-Ch VGS = 10 V; ID = 2.2 A P-Ch VGS = -10 V; ID = -1 A forward transfer admittance Max N-Ch VGS = 4.5 V; ID = 1 A RDSon Typ VGS = 0; ID = 10 mA VGS = -4.5 V; VDS = -5 V drain-source on-state resistance Min VGS = 0; ID = -10 mA VGS = 10 V; VDS = 1 V on-state drain current Type A 0.11 0.2 0.08 0.1 0.33 0.4 0.22 0.25 VDS = 20 V; ID = 2.2 A N-Ch 2 4.5 VDS = -20 V; ID = -1 A P-Ch 1 2 S S VGS = 0; VDS = 20 V; f = 1 MHz N-Ch 250 pF VGS = 0; VDS = -20 V; f = 1 MHz P-Ch 250 pF VGS = 0; VDS = 20 V; f = 1 MHz N-Ch 140 pF VGS = 0; VDS = -20 V; f = 1 MHz P-Ch 140 pF VGS = 0; VDS = 20 V; f = 1 MHz N-Ch 50 pF VGS = 0; VDS = -20 V; f = 1 MHz P-Ch 50 VGS = 10 V; VDS = 15 V; ID = 2.3 A N-Ch 10 30 pF VGS = -10 V; VDS = -15 V; ID = -2.3 A P-Ch 10 25 VGS = 10 V; VDS = 15 V; ID = 2.3 A N-Ch 1 nC nC nC VGS = -10 V; VDS = -15 V; ID = -2.3 A P-Ch 1 nC VGS = 10 V; VDS = 15 V; ID = 2.3 A N-Ch 2.5 nC VGS = -10 V; VDS = -15 V; ID = -2.3 A P-Ch 3 nC VGS =0 to 10 V; VDD=20V;ID=1A;RL=20 N-Ch 15 40 ns VGS=0 to -10V;VDD=-20V;ID=-1 A;RL=20 P-Ch 20 80 ns VGS=10 to 0 V;VDD=20V;ID=1A;RL=20 N-Ch 25 140 ns VGS=-10 to 0 V;VDD=-20V;ID=-1 A;RL=20 P-Ch 50 140 ns VGD = 0; IS = 1.25 A N-Ch 1.2 V VGD = 0; IS = -1.25 A P-Ch -1.6 V IS = 1.25 A; di/dt = 100 A/ N-Ch 35 100 ns P-Ch 150 200 ns IS = -1.25 A; di/dt = 100 A/ [email protected] s s 4008-318-123 2of 2