KEXIN KVP4424Z

Transistors
IC
SMD Type
250V P-Channel Enhancement
Mode Vertical MOSFET
KVP4424Z
SOT-89
Features
240 Volt VDS
+0.1
4.50-0.1
+0.1
1.50-0.1
typical at VGS=-3.5V
+0.1
2.50-0.1
Low threshold and Fast switching
1
+0.1
4.00-0.1
+0.1
1.80-0.1
3
2
+0.1
0.53-0.1
+0.1
0.44-0.1
+0.1
3.00-0.1
+0.1
0.40-0.1
+0.1
2.60-0.1
+0.1
0.48-0.1
+0.1
0.80-0.1
RDS(on)= 8.8
Unit: mm
1. Source
Base
1.
Collector
2.2. Drain
Emiitter
3.3. Gate
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
VDS
-240
V
ID
-200
mA
Pulsed Drain Current
IDM
-1
A
Gate Source Voltage
VGS
Power Dissipation at Tamb =25
Ptot
1*
Tj:Tstg
-55 to +150
Drain-Source Voltage
Continuous Drain Current at Tamb=25
Operating and Storage Temperature Range
40
V
W
* recommended Ptot calculated using FR4 measuring 15X15X0.6mm
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1
Transistors
IC
SMD Type
KVP4424Z
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
BVDSS
ID=-1mA, VGS=0V
-240
Gate-Source Threshold Voltage
VGS(th)
ID=-1mA, VDS= VGS
-0.7
Gate-Body Leakage
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current
ID(on)
Static Drain-Source
RDS(on)
On-State Resistance
Typ
Max
Unit
V
-2.0
V
100
nA
VDS=-240V, VGS=0V
-10
A
VDS=-190V, VGS=0V, T=125
-100
A
VGS=
-1.4
40V, VDS=0V
VDS=-10V, VGS=-10V
-0.75
VGS=-10V, ID=-200mA
VGS=-3.5V, ID=-100mA
A
7.1
9
8.8
11
gfs
Input Capacitance *2
Ciss
Common Source Output Capacitance *2
Coss
18
25
pF
Reverse Transfer Capacitance*2
Crss
5
15
pF
Turn-On Delay Time *2,3
td(on)
8
15
ns
tr
Turn-Off Delay Time *2,3
td(off)
Fall Time *2,3
VDS=-10V,ID=-0.2A
-1.0
Forward Transconductance *1,2
Rise Time *2,3
VDS=-25V, VGS=0V, f=1MHz
VDD
-50V, ID =-0.25A,VGEN=-10V
tf
2%
*2 Sample test.
*3 Switching times measured with 50
source impedance and
Spice parameter data is available upon request for this device
Marking
Marking
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24P
125
mS
100
*1 Measured under pulsed conditions. Width=300 s. Duty cycle
2
Min
Drain-Source Breakdown Voltage
5ns rise time on a pulse generator
200
pF
8
15
ns
26
40
ns
20
30
ns