Diodes SMD Type High-Speed Double Diode BAS56 Unit: mm Features Small plastic SMD package High switching speed: max. 6 ns Continuous reverse voltage:max. 60 V Repetitive peak reverse voltage:max. 60 V Repetitive peak forward current:max. 600 mA. Absolute Maximum Ratings Ta = 25 Parameter repetitive peak reverse voltage continuous reverse voltage continuous forward current repetitive peak forward current Symbol Test Condition Min 60 VRRM series connection 120 series connection 120 60 VR IF IFRM Max single diode loaded; 200 double diode loaded; 150 single diode loaded 600 double diode loaded 430 Unit V V mA mA square wave; Tj = 25 prior to surge non-repetitive peak forward current IFSM t=1 9 s t = 100 t = 10 ms total power dissipation Ptot storage temperature Tstg junction temperature A 3 s 1.7 250 Tamb = 25 -65 mW +150 Tj 150 thermal resistance from junction to tie-point Rth j-tp 360 K/W thermal resistance from junction to ambient Rth j-a 500 K/W www.kexin.com.cn 1 Diodes SMD Type BAS56 Electrical Characteristics Ta = 25 Symbol Test Condition Max Unit forward voltage Parameter VF IF = 200 mA; DC value; 1.0 mV reverse current IR VR = 60 V 100 nA 100 A 100 nA VR =60 V;Tj = 150 Min series connection reverse current IR diode capacitance Cd reverse recovery time trr VR = 120 V VR =120 V;Tj = 150 100 A f = 1 MHz; VR = 0 2.5 pF 6 ns when switched from IF = 400 mA;tr = 30 ns; 2.0 V when switched from IF = 400 mA;tr = 100 ns; 1.5 V when switched from IF = 400 mA to,IR = 400 mA; RL = 100 forward recovery voltage Marking Marking 2 L51 www.kexin.com.cn Vfr ; measured at IR = 40 mA