Diodes SMD Type High Voltage Double Diode BAW101S SOT-363 Unit: mm +0.15 2.3-0.15 Features +0.1 1.25-0.1 0.525 +0.1 1.3-0.1 0.65 Small plastic SMD package 0.36 High switching speed: max. 50 ns +0.05 0.1-0.02 0.1max +0.1 0.3-0.1 +0.1 2.1-0.1 High continuous reverse voltage: 300 V +0.05 0.95-0.05 Electrically insulated diodes. Absolute Maximum Ratings Ta = 25 Parameter Symbol Conditions Min Max Unit Per diode continuous reverse voltage repetitive peak forward current continuous forward current IF IFRM non-repetitive peak forward current IFSM total power dissipation Ptot storage temperature Tstg operating ambient temperature series connection 600 series connection 600 single diode loaded; 250 double diode loaded; 140 300 VRRM repetitive peak forward current junction temperature 300 VR 625 square wave; Tj = 25 prior to surge;t = 1 s Ts = 25 V mA mA 4.5 A 350 mW -65 +150 -65 +150 Tj Tamb V 150 thermal resistance from junction to soldering point Rth j-s 255 K/W thermal resistance from junction to ambient Rth j-a 357 K/W www.kexin.com.cn 1 Diodes SMD Type BAW101S Electrical Characteristics Ta = 25 Parameter Symbol reverse breakdown voltage Conditions Min 300 Unit VBR(R) IR = 100 A forward voltage VF IF = 100 mA; note 1 1.1 mV reverse current IR VR = 25 V 150 nA 50 A VR = 250 V; Tamb = 150 reverse recovery time trr when switched from IF = 30 mA to IR = 30 mA; RL = 100 diode capacitance Cd Note 1. Pulse test: pulse width = 300 Marking Marking 2 Max K2 www.kexin.com.cn s; ä = 0.02. 50 ns 2 pF ; measured at IR = 3 mA; VR = 0; f = 1 MHz;