TYSEMI BAW101S

Product specification
BAW101S
SOT-363
Unit: mm
+0.15
2.3-0.15
Features
+0.1
1.25-0.1
0.525
+0.1
1.3-0.1
0.65
Small plastic SMD package
0.36
High switching speed: max. 50 ns
+0.05
0.1-0.02
0.1max
+0.1
0.3-0.1
+0.1
2.1-0.1
High continuous reverse voltage: 300 V
+0.05
0.95-0.05
Electrically insulated diodes.
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Conditions
Min
Max
Unit
Per diode
continuous reverse voltage
300
VR
repetitive peak forward current
series connection
600
series connection
600
single diode loaded;
250
double diode loaded;
140
300
VRRM
continuous forward current
IF
repetitive peak forward current
IFRM
non-repetitive peak forward current
IFSM
total power dissipation
Ptot
storage temperature
Tstg
junction temperature
625
square wave; Tj = 25
prior to surge;t = 1
s
Ts = 25
Tamb
V
mA
mA
4.5
A
350
mW
-65
+150
-65
+150
Tj
operating ambient temperature
V
150
thermal resistance from junction to soldering point
Rth j-s
255
K/W
thermal resistance from junction to ambient
Rth j-a
357
K/W
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[email protected]
4008-318-123
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Product specification
BAW101S
Electrical Characteristics Ta = 25
Parameter
Symbol
reverse breakdown voltage
Conditions
Min
300
Max
Unit
VBR(R)
IR = 100 A
forward voltage
VF
IF = 100 mA; note 1
1.1
mV
reverse current
IR
VR = 25 V
150
nA
50
A
VR = 250 V; Tamb = 150
reverse recovery time
trr
when switched from IF = 30 mA to IR = 30 mA;
RL = 100
diode capacitance
Cd
50
ns
2
pF
; measured at IR = 3 mA;
VR = 0; f = 1 MHz;
Note
1. Pulse test: pulse width = 300
s; ä = 0.02.
Marking
Marking
K2
http://www.twtysemi.com
[email protected]
4008-318-123
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