KEXIN JAP

Diodes
SMD Type
High-speed double diode
BAV74
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
1
High switching speed: max.4 ns
0.55
Small plastic SMD package
+0.1
1.3-0.1
+0.1
2.4-0.1
Features
0.4
3
2
+0.1
0.95-0.1
+0.1
1.9-0.1
Continuous reverse voltage: max. 50 V
+0.05
0.1-0.01
+0.1
0.97-0.1
Repetitive peak reverse voltage: max. 60 V
0-0.1
+0.1
0.38-0.1
Repetitive peak forward current: max. 450 mA
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Repetitive peak reverse voltage
Continuous reverse voltage
Continuous forward current
Repetitive peak forward current
Symbol
Conditions
VRRM
VR
IF
Total power dissipation
Ptot
Storage temperature
Tstg
Junction temperature
Unit
60
V
50
V
215
double diode loaded; Note 1
125
IFRM
IFSM
Max
single diode loaded; Note 1
450
square wave;Tj = 25
Non-repetitive peak forward current
Min
mA
prior to surge;
s
4
t = 1 ms
1
t=1
mA
t=1s
0.5
Tamb = 25 ; Note 1
250
-65
A
mW
+150
Tj
150
thermal resistance from junction to tie-point
Rth j-tp
360
K/W
thermal resistance from junction to ambient
Rth j-a
500
K/W
Note
1. Device mounted on an FR4 printed-circuit board.
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1
Diodes
SMD Type
BAV74
Electrical Characteristics Ta = 25
Param eter
Forward voltage
Reverse current
Sym bol
Conditions
Max
Unit
IF = 1 m A
715
mV
VF
I F = 10 m A
855
mV
I F = 100 m A
1.0
V
V R = 25 V
30
nA
V R = 50 V
0.1
A
V R = 25 V; T j = 150
30
A
V R = 50 V; T j = 150
100
A
1.5
pF
4
ns
1.75
V
IR
Diode capacitance
Cd
Reverse recovery tim e
t rr
f = 1 MHz; V R = 1 V;
when switched from I F =10m A to I R = 10 m A;
R L = 100
Reverse recovery tim e
Marking
Marking
2
JAp
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V fr
; m easured at I R = 1 m A;
when switched from I F =10 m A; t r = 2 0 ns;