Transistors SMD Type PNP Switching Transistor PXT2907A Features High current (max. 600 mA) Low voltage (max. 60 V). Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -60 V Collector-emitter voltage VCEO -60 V Emitter-base voltage VEBO -5 V Collector current IC -600 mA Peak collector current ICM -800 mA Peak base current IBM -200 mA W Total power dissipation Ptot 1.3 Storage temperature Tstg -65 to +150 Junction temperature Tj 150 Operating ambient temperature Ramb -65 to +150 Thermal resistance from junction to ambient Rth(j-a) 97 K/W Thermal resistance from junction to soldering point Rth(j-s) 17 K/W www.kexin.com.cn 1 Transistors SMD Type PXT2907A Electrical Characteristics Ta = 25 Parameter Symbol Collector cutoff current ICBO Emitter cutoff current IEBO Testconditons Max Unit IE = 0; VCB = -50 V -10 nA IE = 0; VCB = -50 V; Tj = 125 -10 ìA IC = 0; VEB = -5 V -50 nA IC = -0.1 mA; VCE = -1 V DC current gain hFE collector-emitter saturation voltage base-emitter saturation voltage VBEsat Typ 75 IC = -1 mA; VCE = -1 V 100 IC = -10 mA; VCE = -1 V 100 VCE = -2 V, IC = -150 mA 100 IC = -500 mA; VCE = -2 V 50 300 IC = -150 mA; IB = -15 mA -400 mV IC = -500 mA; IB = -50 mA -1.6 V IC = -150 mA; IB = -15 mA -1.3 V IC = -500 mA; IB = -50 mA -2.6 V 8 pF Collector capacitance Cc IE = iE = 0; VCB = -10 V; f = 1 MHz Emitter capacitance Ce IC = iC = 0; VEB = -500 mV; f = 1 MHz Transition frequency fT Turn-on time ton Delay time IC = -20 mA; VCE = -10 V; f = 100 MHz ICon = -150 mA; IBon = -15 mA; IBoff = 15 mA 35 200 pF MHz 40 ns td 12 ns Rise time tr 30 ns Turn-off time toff 365 ns Storage time ts 300 ns Fall time tf 65 ns Marking Marking 2 VCEsat Min p2F www.kexin.com.cn