KEXIN PXT2907A

Transistors
SMD Type
PNP Switching Transistor
PXT2907A
Features
High current (max. 600 mA)
Low voltage (max. 60 V).
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
-60
V
Collector-emitter voltage
VCEO
-60
V
Emitter-base voltage
VEBO
-5
V
Collector current
IC
-600
mA
Peak collector current
ICM
-800
mA
Peak base current
IBM
-200
mA
W
Total power dissipation
Ptot
1.3
Storage temperature
Tstg
-65 to +150
Junction temperature
Tj
150
Operating ambient temperature
Ramb
-65 to +150
Thermal resistance from junction to ambient
Rth(j-a)
97
K/W
Thermal resistance from junction to soldering point
Rth(j-s)
17
K/W
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1
Transistors
SMD Type
PXT2907A
Electrical Characteristics Ta = 25
Parameter
Symbol
Collector cutoff current
ICBO
Emitter cutoff current
IEBO
Testconditons
Max
Unit
IE = 0; VCB = -50 V
-10
nA
IE = 0; VCB = -50 V; Tj = 125
-10
ìA
IC = 0; VEB = -5 V
-50
nA
IC = -0.1 mA; VCE = -1 V
DC current gain
hFE
collector-emitter saturation voltage
base-emitter saturation voltage
VBEsat
Typ
75
IC = -1 mA; VCE = -1 V
100
IC = -10 mA; VCE = -1 V
100
VCE = -2 V, IC = -150 mA
100
IC = -500 mA; VCE = -2 V
50
300
IC = -150 mA; IB = -15 mA
-400
mV
IC = -500 mA; IB = -50 mA
-1.6
V
IC = -150 mA; IB = -15 mA
-1.3
V
IC = -500 mA; IB = -50 mA
-2.6
V
8
pF
Collector capacitance
Cc
IE = iE = 0; VCB = -10 V; f = 1 MHz
Emitter capacitance
Ce
IC = iC = 0; VEB = -500 mV; f = 1 MHz
Transition frequency
fT
Turn-on time
ton
Delay time
IC = -20 mA; VCE = -10 V; f = 100 MHz
ICon = -150 mA; IBon = -15 mA;
IBoff = 15 mA
35
200
pF
MHz
40
ns
td
12
ns
Rise time
tr
30
ns
Turn-off time
toff
365
ns
Storage time
ts
300
ns
Fall time
tf
65
ns
Marking
Marking
2
VCEsat
Min
p2F
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