Transistors SMD Type NPN Switching Transistor KMBT2222A SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 ● Low voltage (max.40 V). +0.1 1.3-0.1 +0.1 2.4-0.1 ● High current (max. 600 mA) 0.4 3 ■ Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector-base voltage VCBO 75 V Collector-emitter voltage VCEO 40 V Emitter-base voltage VEBO 6 V IC 600 mA Total power dissipation Ta≤ 25 ℃ Ptot 300 mW Thermal resistance from junction to ambient RèJA 417 K/W Tj, TSTG -65 to +150 ℃ Collector current Operating and Storage and Temperature Range www.kexin.com.cn 1 Transistors SMD Type KMBT2222A ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Testconditons Typ Max Unit Collector-Base Breakdown Voltage V(BR)CBO IC = 10μA, IE = 0 75 V Collector-Emitter Breakdown Voltage V(BR)CEO IC = 10 mA, IB = 0 40 V Emitter-Base Breakdown Voltage V(BR)EBO IC = 10 μA, I C = 0 6 V ICBO Collector cutoff current Emitter cutoff current IEBO IE = 0; VCB = 60 V 10 nA IE = 0; VCB = 60 V; Tj = 125 ℃ 10 μA IC = 0; VEB = 3 V 10 nA IC = 0.1 mA; VCE = 10 V DC current gain hFE collector-emitter saturation voltage base-emitter saturation voltage VCEsat VBEsat 35 IC = 1 mA; VCE = 10 V 50 IC = 10 mA; VCE = 10 V 75 IC = 10 mA; VCE = 10 V; Ta = -55 ℃ 35 IC= 150 mA; VCE = 10 V 100 IC = 150 mA; VCE = 1 V 50 IC = 500 mA; VCE = 10 V 40 300 IC = 150 mA; IB = 15 mA 300 mV IC = 500 mA; IB = 50 mA 1 V 1.2 V IC = 500 mA; IB = 50 mA 2 V IC = 150 mA; IB = 15 mA 0.6 Delay time Rise time td tr IB1 = 15 mA, IC = 150 mA, VCC = 30V, VBE = -0.5 V 15 25 ns ns Storage time ts IB1 = IB2 = 15 mA, 200 ns Fall time tf IC = 150 mA, VCC = 30V 60 ns Output Capacitance Cobo VCB = 10V, f = 1.0MHz, IE = 0 8 pF Input Capacitance Cibo VEB = 0.5V, f = 1.0MHz, IC = 0 25 pF Noise Figure NF VCE = 10 V, IC = 100 μA,RS = 1 kΩ, f = 1 kHz Transition frequency fT ■ Marking Marking 2 Min www.kexin.com.cn 1P IC = 20 mA; VCE = 20 V; f = 100 MHz 4 300 dB MHz Transistors SMD Type KMBT2222A 1000 300 hFE, DC CURRENT GAIN PD, POWER DISSIPATION (mW) 350 250 200 150 100 TA = 125°C 100 TA = +25°C TA = -25°C 10 50 VCE = 1.0V 0 0 25 50 75 100 125 150 175 1 200 TA, AMBIENT TEMPERATURE (°C) Fig. 1, Max Power Dissipation vs Ambient Temperature 1000 100 VCE COLLECTOR-EMITTER VOLTAGE (V) 2.0 20 CAPACITANCE (pF) 10 IC, COLLECTOR CURRENT (mA) Fig. 2, Typical DC Current Gain vs Collector Current 30 Cibo 10 5.0 Cobo 1.0 1 0.1 0.1 1.0 10 REVERSE VOLTS (V) Fig. 3 Typical Capacitance 50 1.8 IC = 30mA IC = 1mA IC = 10mA 1.6 IC = 100mA 1.4 IC = 300mA 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 100 IB, BASE CURRENT (mA) Fig. 4 Typical Collector Saturation Region www.kexin.com.cn 3