Transistors SMD Type NPN High-Voltage Transistors BF820,BF822 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 High voltage (max. 300 V). 0.55 Low current (max. 50 mA) 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Collector-base voltage BF820 VCBO BF822 Collector-emitter voltage BF820 VCEO BF822 Emitter-base voltage Rating Unit 300 V 250 V 300 V 250 V 5 V VEBO Collector current IC 50 mA Peak collector current ICM 100 mA Peak base current IBM 50 mA mW Total power dissipation * Ptot 250 Storage temperature Tstg -65 to +150 Junction temperature Tj 150 Operating ambient temperature Ramb -65 to +150 Thermal resistance from junction to ambient * Rth j-a 500 K/W * Transistor mounted on an FR4 printed-circuit board. Electrical Characteristics Ta = 25 Parameter Symbol Collector cutoff current ICBO Testconditons Min Typ Max Unit IE = 0; VCB = 200 V 10 nA ìA IE = 0; VCB = 200 V; Tj = 150 10 Emitter cutoff current IEBO IC = 0; VEB = 5 V 50 nA DC current gain * hFE IC = 25 mA; VCE = 20 V 600 mV collector-emitter saturation voltage VCEsat Feedback capacitance Cre Transition frequency fT 50 IC = 30 mA; IB = 5 mA IC = ic = 0; VCB = 30 V; f = 1 MHz IC = 10 mA; VCE = 10 V; f = 100 MHz 1.6 60 pF MHz hFE Classification TYPE BF820 BF822 Marking 1V 1X www.kexin.com.cn 1