Transistors SMD Type High Voltage Transistor PZTA96S SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 Features PNP Silicon +0.1 3.00-0.1 +0.15 1.65-0.15 +0.2 3.50-0.2 6.50 +0.2 -0.2 +0.2 0.90-0.2 +0.3 7.00-0.3 4 1 Base 1 2 Collector 3 2 +0.1 0.70-0.1 2.9 3 Emitter 4 Collector 4.6 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector–Emitter Voltage VCEO -450 V Collector–Base Voltage VCBO -450 V Emitter–Base Voltage VEBO -5 V Collector Current Total Power Dissipation Up to TA = 25 * Storage Temperature Range Junction Temperature Thermal Resistance from Junction to Ambient * IC -500 mA PD 1.5 Watts Tstg -65 to +150 TJ 150 RèJA 83.3 * Device mounted on a glass epoxy printed circuit board 1.575 in. X 1.575 in.X 0.059 in.; Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector–Emitter Breakdown Voltage V(BR)CEO IC = -1.0 mA, IB = 0 -450 V Collector–Emitter Breakdown Voltage V(BR)CBO IC = -100 ìA,IE = 0 -450 V Emitter–Base Breakdown Voltage V(BR)EBO IE = -10ìA, IC = 0 -5.0 V Collector–Base Cutoff Current ICBO VCB = -400 V, IE = 0 -0.1 ìA Emitter–Base Cutoff Current IEBO VBE = -4.0 V, IC = 0 -0.1 ìA DC Current Gain* hFE IC = -10 mA, VCE =-10 V VCE(sat) IC = -20 mA, IB =-2.0 mA -0.6 V VBE(sat) IC = -20 mA, IB = -2.0 mA -1.0 V Saturation Voltages * Pulse Test: Pulse Width 50 150 300 ìs; Duty Cycle = 2.0%. Marking Marking ZTA96 www.kexin.com.cn 1