KEXIN PZTA96S

Transistors
SMD Type
High Voltage Transistor
PZTA96S
SOT-223
Unit: mm
0.1max
+0.05
0.90-0.05
Features
PNP Silicon
+0.1
3.00-0.1
+0.15
1.65-0.15
+0.2
3.50-0.2
6.50
+0.2
-0.2
+0.2
0.90-0.2
+0.3
7.00-0.3
4
1 Base
1
2 Collector
3
2
+0.1
0.70-0.1
2.9
3 Emitter
4 Collector
4.6
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector–Emitter Voltage
VCEO
-450
V
Collector–Base Voltage
VCBO
-450
V
Emitter–Base Voltage
VEBO
-5
V
Collector Current
Total Power Dissipation Up to TA = 25
*
Storage Temperature Range
Junction Temperature
Thermal Resistance from Junction to Ambient *
IC
-500
mA
PD
1.5
Watts
Tstg
-65 to +150
TJ
150
RèJA
83.3
* Device mounted on a glass epoxy printed circuit board 1.575 in. X 1.575 in.X 0.059 in.;
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector–Emitter Breakdown Voltage
V(BR)CEO
IC = -1.0 mA, IB = 0
-450
V
Collector–Emitter Breakdown Voltage
V(BR)CBO
IC = -100 ìA,IE = 0
-450
V
Emitter–Base Breakdown Voltage
V(BR)EBO
IE = -10ìA, IC = 0
-5.0
V
Collector–Base Cutoff Current
ICBO
VCB = -400 V, IE = 0
-0.1
ìA
Emitter–Base Cutoff Current
IEBO
VBE = -4.0 V, IC = 0
-0.1
ìA
DC Current Gain*
hFE
IC = -10 mA, VCE =-10 V
VCE(sat)
IC = -20 mA, IB =-2.0 mA
-0.6
V
VBE(sat)
IC = -20 mA, IB = -2.0 mA
-1.0
V
Saturation Voltages
* Pulse Test: Pulse Width
50
150
300 ìs; Duty Cycle = 2.0%.
Marking
Marking
ZTA96
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