Transistors IC SMD Type PNP General Purpose Transistors BCW69,BCW70 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 Low voltage (max. 45 V). 0.55 Low current (max. 100 mA). 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -50 V Collector-emitter voltage VCEO -45 V Emitter-base voltage VEBO -5 V Collector current IC -100 mA Peak collector current ICM -200 mA Peak base current IBM -200 mA Total power dissipation Ptot 250 mW Storage temperature Tstg -65 to +150 Junction temperature Tj 150 Operating ambient temperature Ramb -65 to +150 Thermal resistance from junction to ambient * Rth j-a 500 K/W * Transistor mounted on an FR4 printed-circuit board. www.kexin.com.cn 1 Transistors IC SMD Type BCW69,BCW70 Electrical Characteristics Ta = 25 Parameter Symbol Collector cutoff current Emitter cutoff current BCW69 DC current gain Testconditons Min BCW69 IE = 0; VCB = -20 V -100 nA IE = 0; VCB = -20 V; Tj = 100 -10 ìA IEBO IC = 0; VEB = -5 V -100 nA hFE 90 IC = -10 ìA; VCE = -5 V 150 hFE IC = -2 mA; VCE = -5 V VBE(sat) IC = -50 mA; IB = -2.5 mA * -150 mV IC = -10 mA; IB = -0.5 mA -720 mV IC = -50 mA; IB = -2.5 mA * -810 mV Collector capacitance CC IE = ie = 0; VCB = -10 V; f = 1 MHz Transition frequency fT IC = -10 mA; VCE = -5 V; f = 100 MHz Noise figure NF IC = -200 ìA; VCE = -5 V; RS = 2 kÙ; f = 1 kHz; B = 200 Hz hFE Classification 2 mV IC = -2 mA; VCE = -5 V 0.02. TYPE BCW69 BCW70 Marking H1 H2 www.kexin.com.cn 500 -80 VBE 300 ìs; d 260 IC = -10 mA; IB = -0.5 mA Base to emitter voltage * Pulse test: tp 120 215 VCE(sat) Base to emitter saturation voltage Unit ICBO BCW70 Collector-emitter saturation voltage Max ICBO BCW70 DC current gain Typ -600 -750 4.5 mV pF 100 MHz 10 dB