KEXIN BCW70

Transistors
IC
SMD Type
PNP General Purpose Transistors
BCW69,BCW70
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
+0.1
1.3-0.1
+0.1
2.4-0.1
Features
0.4
3
1
Low voltage (max. 45 V).
0.55
Low current (max. 100 mA).
2
+0.1
0.95-0.1
+0.1
1.9-0.1
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector-base voltage
Parameter
VCBO
-50
V
Collector-emitter voltage
VCEO
-45
V
Emitter-base voltage
VEBO
-5
V
Collector current
IC
-100
mA
Peak collector current
ICM
-200
mA
Peak base current
IBM
-200
mA
Total power dissipation
Ptot
250
mW
Storage temperature
Tstg
-65 to +150
Junction temperature
Tj
150
Operating ambient temperature
Ramb
-65 to +150
Thermal resistance from junction to ambient *
Rth j-a
500
K/W
* Transistor mounted on an FR4 printed-circuit board.
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1
Transistors
IC
SMD Type
BCW69,BCW70
Electrical Characteristics Ta = 25
Parameter
Symbol
Collector cutoff current
Emitter cutoff current
BCW69
DC current gain
Testconditons
Min
BCW69
IE = 0; VCB = -20 V
-100
nA
IE = 0; VCB = -20 V; Tj = 100
-10
ìA
IEBO
IC = 0; VEB = -5 V
-100
nA
hFE
90
IC = -10 ìA; VCE = -5 V
150
hFE
IC = -2 mA; VCE = -5 V
VBE(sat)
IC = -50 mA; IB = -2.5 mA *
-150
mV
IC = -10 mA; IB = -0.5 mA
-720
mV
IC = -50 mA; IB = -2.5 mA *
-810
mV
Collector capacitance
CC
IE = ie = 0; VCB = -10 V; f = 1 MHz
Transition frequency
fT
IC = -10 mA; VCE = -5 V; f = 100 MHz
Noise figure
NF
IC = -200 ìA; VCE = -5 V; RS = 2 kÙ;
f = 1 kHz; B = 200 Hz
hFE Classification
2
mV
IC = -2 mA; VCE = -5 V
0.02.
TYPE
BCW69
BCW70
Marking
H1
H2
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500
-80
VBE
300 ìs; d
260
IC = -10 mA; IB = -0.5 mA
Base to emitter voltage
* Pulse test: tp
120
215
VCE(sat)
Base to emitter saturation voltage
Unit
ICBO
BCW70
Collector-emitter saturation voltage
Max
ICBO
BCW70
DC current gain
Typ
-600
-750
4.5
mV
pF
100
MHz
10
dB