TI ADS6142-HT

ADS6142-HT
SLWS234 – DECEMBER 2011
www.ti.com
14-BITS, 65 MSPS ADC WITH DDR LVDS/CMOS OUTPUTS
Check for Samples: ADS6142-HT
FEATURES
1
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SUPPORTS EXTREME TEMPERATURE
APPLICATIONS
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APPLICATIONS
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802.16d/e
Test and Measurement Instrumentation
High Definition Video
Medical Imaging
Radar Systems
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Maximum Sample Rate: 65 MSPS
14-Bit Resolution with No Missing Codes
3.5 dB Coarse Gain and up to 6 dB
Programmable Fine Gain for SNR/SFDR
Trade-Off
Parallel CMOS and Double Data Rate (DDR)
LVDS Output Options
Supports Sine, LVCMOS, LVPECL, LVDS Clock
Inputs, and Clock Amplitude Down to 400
mVPP
Clock Duty Cycle Stabilizer
Internal Reference with Support for External
Reference
No External Decoupling Required for
References
Programmable Output Clock Position and
Drive Strength to Ease Data Capture
3.3-V Analog and 1.8-V to 3.3-V Digital Supply
Down-Hole Drilling
High Temperature Environment
Wireless Communications Infrastructure
Software Defined Radio
Power Amplifier Linearization
(1)
Controlled Baseline
One Assembly/Test Site
One Fabrication Site
Available in Extreme (–40°C/210°C)
Temperature Range (1)
Extended Product Life Cycle
Extended Product-Change Notification
Product Traceability
Texas Instruments high temperature products
utilize highly optimized silicon (die) solutions
with design and process enhancements to
maximize performance over extended
temperatures. All devices are characterized
and qualified for 1000 hours of continuous
operating life at maximum rated temperature.
Custom temperature ranges available
DESCRIPTION
The ADS6142 is a high performance and low power consumption 14-bit A/D converter with a sampling frequency
of 65 MSPS. An internal high bandwidth sample and hold and a low jitter clock buffer help to achieve high SNR
and high SFDR even at high input frequencies.
The ADS6142 features coarse and fine gain options to improve SFDR performance at lower full-scale analog
input ranges.
The digital data outputs are either parallel CMOS or DDR (Double Data Rate) LVDS. Several features exist to
ease data capture such as — controls for output clock position and output buffer drive strength, LVDS current,
and internal termination programmability.
The output interface type, gain, and other functions are programmed using a 3-wire serial interface. Alternatively,
some functions are configured using dedicated parallel pins so the device powers up to the desired state.
The ADS6142 includes internal references while eliminating traditional reference pins and associated external
decoupling. External reference mode is also supported.
The ADS6142 is specified over the extreme temperature range (–40°C to 210°C).
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2011, Texas Instruments Incorporated
ADS6142-HT
SLWS234 – DECEMBER 2011
www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
CLKP
INP
SHA
INM
VCM
DRGND
CLKOUTP
CLOCK
GEN
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CLKM
DRVDD
AGND
AVDD
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
Digital
Encoder
and
Serializer
14-Bit
ADC
Control
Interface
Reference
CLKOUTM
D0_D1_P
D0_D1_M
D2_D3_P
D2_D3_M
D4_D5_P
D4_D5_M
D6_D7_P
D6_D7_M
D8_D9_P
D8_D9_M
D10_D11_P
D10_D11_M
D12_D13_P
D12_D13_M
ADS6142
PDN
SEN
SDATA
SCLK
RESET
LVDS MODE
Table 1. ORDERING INFORMATION (1)
(1)
(2)
2
TA
PACKAGE (2)
ORDERABLE PART NUMBER
TOP-SIDE MARKING
–40°C to 210°C
KGD (bare die)
ADS6142SKGD1
NA
For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
Web site at www.ti.com.
Package drawings, standard packing quantities, thermal data, symbolization, and PCB design guidelines are available at
www.ti.com/sc/package.
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BARE DIE INFORMATION
DIE PAD
SIZE
DIE PAD
COORDINATES
DIE
THICKNESS
BACKSIDE FINISH
BACKSIDE
POTENTIAL
BOND PAD
METALLIZATION
COMPOSITION
BOND PAD
THICKNESS
70 x 70 µm
See Table 2
11 mils
Silicon with
backgrind
DRVSS
Ti/Al-Cu/TiN
1100 nm
DIE
SIZE
2715 x 2460 µm
96.85 x 106.89 mils
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0
0
Edge of
Scribe
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Table 2. BOND PAD COORDINATES
DESCRIPTION
PAD NUMBER
X MIN
Y MIN
X MAX
Y MAX
DRVDD
1
80.92
2065
150.92
2135
N/C
2
80.92
1984.5
150.92
2054.5
N/C
3
80.92
1904
150.92
1974
RESET
4
80.92
1823.5
150.92
1893.5
SCLK
5
80.92
1662.5
150.92
1732.5
SDATA
6
80.92
1582
150.92
1652
SEN
7
80.92
1501.5
150.92
1571.5
N/C
AGND
AGND
AGND
CLKP
CLKP
CLKM
CLKM
N/C
N/C
AGND
AGND
N/C
INP
INP
INM
INM
N/C
AGND
AGND
N/C
AVDD
AVDD
VCM
VCM
N/C
N/C
N/C
AVDD
PDN
N/C
4
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N/C
8
80.92
1206.1
150.92
1276.1
9
80.92
1104.6
150.92
1174.6
10
80.92
1003.1
150.92
1073.1
11
80.92
901.6
150.92
971.6
12
80.92
800.1
150.92
870.1
13
80.92
698.6
150.92
768.6
14
80.92
597.1
150.92
667.1
15
80.92
495.6
150.92
565.6
464.1
16
80.92
394.1
150.92
17
80.92
292.6
150.92
362.6
18
262.5
80.92
332.5
150.92
19
358.365
80.92
428.365
150.92
20
454.23
80.92
524.23
150.92
21
550.095
80.92
620.095
150.92
22
645.96
80.92
715.96
150.92
23
741.825
80.92
811.825
150.92
24
837.69
80.92
907.69
150.92
25
933.555
80.92
1003.555
150.92
26
1029.42
80.92
1099.42
150.92
27
1125.285
80.92
1195.285
150.92
28
1221.15
80.92
1291.15
150.92
29
1317.015
80.92
1387.015
150.92
30
1412.88
80.92
1482.88
150.92
31
1508.745
80.92
1578.745
150.92
32
1604.61
80.92
1674.61
150.92
33
1700.475
80.92
1770.475
150.92
34
1796.34
80.92
1866.34
150.92
35
1892.205
80.92
1962.205
150.92
36
1988.07
80.92
2058.07
150.92
37
2083.935
80.92
2153.935
150.92
38
2179.8
80.92
2249.8
150.92
39
2404.08
455
2474.08
525
N/C
40
2404.08
535.5
2474.08
605.5
N/C
41
2404.08
616
2474.08
686
N/C
42
2404.08
696.5
2474.08
766.5
D0
43
2402.925
829.71
2472.925
899.71
N/C
44
2402.925
945.28
2472.925
1015.28
D1
45
2402.925
1060.85
2472.925
1130.85
D2
46
2402.925
1162.21
2472.925
1232.21
SUBST
47
2402.925
1277.78
2472.925
1347.78
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Table 2. BOND PAD COORDINATES (continued)
DESCRIPTION
PAD NUMBER
X MIN
Y MIN
X MAX
Y MAX
D3
48
2402.925
1393.35
2472.925
1463.35
D4
49
2402.925
1494.71
2472.925
1564.71
SUBST
50
2402.925
1610.28
2472.925
1680.28
D5
51
2402.925
1725.85
2472.925
1795.85
D6
52
2402.925
1827.21
2472.925
1897.21
N/C
53
2402.925
1942.78
2472.925
2012.78
D7
54
2402.925
2058.35
2472.925
2128.35
OVR
SUBST
CLKOUT
N/C
SUBST
N/C
D8
SUBST
D9
D10
SUBST
D11
D12
SUBST
D13
SUBST
DRVDD
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SUBST
SUBST
55
2205
2229.08
2275
2299.08
56
2103.5
2229.08
2173.5
2299.08
57
1980.79
2227.925
2050.79
2297.925
58
1865.22
2227.925
1935.22
2297.925
59
1749.65
2227.925
1819.65
2297.925
60
1648.29
2227.925
1718.29
2297.925
61
1532.72
2227.925
1602.72
2297.925
62
1417.15
2227.925
1487.15
2297.925
63
1315.79
2227.925
1385.79
2297.925
64
1200.22
2227.925
1270.22
2297.925
65
1084.65
2227.925
1154.65
2297.925
66
983.29
2227.925
1053.29
2297.925
67
867.72
2227.925
937.72
2297.925
68
752.15
2227.925
822.15
2297.925
69
650.79
2227.925
720.79
2297.925
70
535.22
2227.925
605.22
2297.925
71
419.65
2227.925
489.65
2297.925
72
322
2229.08
392
2299.08
73
241.5
2229.08
311.5
2299.08
Substrate should
be connected to
DRVSS
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ABSOLUTE MAXIMUM RATINGS (1)
VI
VALUE
UNIT
Supply voltage range, AVDD
–0.3 to 3.9
V
Supply voltage range, DRVDD
–0.3 to 3.9
V
Voltage between AGND and DRGND
–0.3 to 0.3
V
Voltage between AVDD to DRVDD
–0.3 to 3.3
V
–0.3 to 2
V
–0.3 to minimum ( 3.6, AVDD + 0.3)
V
Voltage applied to VCM pin (in external reference mode)
Voltage applied to analog input pins, INP and INM
–0.3 to (AVDD + 0.3)
V
TJ
Operating junction temperature range
-40 to 210
°C
Tstg
Storage temperature range
–65 to 210
°C
Voltage applied to analog input pins, CLKP and CLKM
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(1)
Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
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RECOMMENDED OPERATING CONDITIONS
over operating free-air temperature range (unless otherwise noted)
TJ = -40°C to 125°C
MIN
TJ = 210°C
NOM
MAX
MIN
NOM
MAX
UNIT
SUPPLIES
AVDD
DRVDD
Analog supply voltage
Output buffer supply
voltage
CMOS Interface
LVDS Interface
3
3.3
3.6
3
3.3
3.6
V
1.65
1.8 to 3.3
3.6
1.65
1.8 to 3.3
3.6
V
3
3.3
3.6
3
3.3
3.6
V
ANALOG INPUTS
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Differential input voltage range
VIC
2
1.5 ± 0.1
Input common-mode voltage
Voltage applied on VCM in external reference mode
1.45
1.5
2
Vpp
1.5 ± 0.1
1.55
1.45
1.5
V
1.55
V
CLOCK INPUT
Input clock sample rate, FS
1
Sine wave, ac-coupled
Input clock amplitude
differential
(VCLKP – VCLKM)
0.4
LVPECL, ac-coupled
LVDS, ac-coupled
LVCMOS, ac-coupled
Input Clock duty cycle
65
1.5
1
0.4
± 0.8
± 0.8
± 0.35
± 0.35
3.3
35%
65 MSPS
1.5
50%
65%
35%
Vpp
3.3
50%
65%
DIGITAL OUTPUTS
Output buffer drive
strength (1)
For CLOAD ≤ 5 pF and
DRVDD ≥ 2.2 V
DEFAULT
strength
DEFAULT
strength
For CLOAD > 5 pF and
DRVDD ≥ 2.2 V
MAXIMUM
strength
MAXIMUM
strength
For DRVDD < 2.2 V
MAXIMUM
strength
MAXIMUM
strength
10
10
5
5
10
10
100
100
CMOS Interface, maximum
buffer strength
CLOAD
Maximum external load
LVDS Interface, without
capacitance from each
internal termination
output pin to DRGND
LVDS Interface, with
internal termination
RLOAD
Differential load resistance (external) between the
LVDS output pairs
TJ
Operating junction temperature range
(1)
-40
125
pF
Ω
210
°C
See Output Buffer Strength Programmability in the application section.
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ELECTRICAL CHARACTERISTICS
Typical values are at 25°C, AVDD = DRVDD = 3.3 V, maximum rated sampling frequency, 50% clock duty cycle, –1 dBFS
differential analog input, internal reference mode, applies to CMOS and LVDS interfaces, unless otherwise noted.
TJ = -40°C to 125°C
PARAMETER
MIN
RESOLUTION
TYP
TJ = 210°C
MAX
MIN
TYP
MAX
UNIT
14
14
Bits
2
2
VPP
>1
>1
MΩ
ANALOG INPUT
Differential input voltage range
Differential input resistance (dc),
see Figure 37
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Differential input capacitance,
see Figure 38
7
7
450
300
MHz
92
95
μA
Internal reference bottom voltage
1
1
V
Internal reference top voltage
2
2
Analog input bandwidth
Analog input common-mode current (per input pin of
each ADC)
pF
REFERENCE VOLTAGES
VREFB
VREFT
ΔVREF
VCM
Internal reference error (VREFT–VREFB)
-30
Common-mode output voltage
VCM Output current capability
±5
30
-55
±5
1.5
1.5
4
4
V
55
mV
V
mA
DC ACCURACY
No missing codes
EO
Specified
Offset error
-11
Offset error temperature coefficient
±2
Specified
11
-13
0.04
±10
13
0.06
mV
mV/°C
There are two sources of gain error – internal reference inaccuracy and channel gain error
EGREF
EGCHAN
Gain error due to internal reference inaccuracy alone,
(ΔVREF /2) %
Gain error of channel alone
-1
(1)
Differential nonlinearity
INL
Integral nonlinearity
1
-1
±0.3
Channel gain error temperature coefficient
DNL
0.6
0.65
1
±0.3
% FS
% FS
Δ%/°C
0.005
-0.95
0.5
2
-0.99
±0.5
2.5
LSB
-10
±2
10
-18
±6
18
LSB
POWER SUPPLY
IAVDD
IDRVDD
IDRVDD
(1)
(2)
(3)
8
0.75
0.76
mA
Digital supply current, CMOS interface,
DRVDD = 1.8 V,
No load capacitance, Fin= 2 MHz (2)
Analog supply current
4
4
mA
Digital supply current, LVDS interface,
DRVDD = 3.3 V,
with 100-Ω external termination
21
48
mA
Total power, CMOS,
DRVDD = 3.3 V (3)
418
450
422
500
mW
Global power down
30
60
30
70
mW
Specified by design and characterization; not tested in production.
In CMOS mode, the DRVDD current scales with the sampling frequency and the load capacitance on the output pins (see Figure 30).
The maximum DRVDD current depends on the actual load capacitance on the digital output lines. Note that the maximum
recommended load capacitance is 10 pF.
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ELECTRICAL CHARACTERISTICS
Typical values are at 25°C, AVDD = DRVDD = 3.3 V, maximum rated sampling frequency, 50% clock duty cycle, –1 dBFS
differential analog input, internal reference mode, applies to CMOS and LVDS interfaces, unless otherwise noted.
PARAMETER
TEST CONDITIONS
TJ = -40°C to 125°C
MIN
TYP
TJ = 210°C
MAX
MIN
TYP
57.5
74
MAX
UNIT
DYNAMIC AC CHARACTERISTICS
Fin = 10 MHz
74.7
Fin = 50 MHz
Fin = 170 MHz
61.5
0 dB Gain
74.4
72.7
dBFS
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SNR
Signal-to-noise ratio,
CMOS
74.4
Fin = 70 MHz
Fin = 230 MHz
3.5 dB Coarse gain
71.8
0 dB Gain
71.7
65.5
3.5 dB Coarse gain
70.9
63
Fin = 10 MHz
75
Fin = 50 MHz
SNR
Signal-to-noise ratio,
LVDS
Fin = 170 MHz
Fin = 230 MHz
RMS output noise
74.6
Fin = 70 MHz
68
0 dB Gain
72.9
3.5 dB Coarse gain
72.1
0 dB Gain
3.5 dB Coarse gain
1.05
Fin = 10 MHz
74.6
60.5
ENOB
Effective number of bits
SFDR
Spurious free dynamic
range
56.5
71.5
0 dB Gain
70.6
56
3.5 dB Coarse gain
70.4
57
74.4
67
74.4
0 dB Gain
72.4
3.5 dB Coarse gain
71.9
0 dB Gain
70.5
3.5 dB Coarse gain
70.5
Fin = 70 MHz
10.5
12
Fin = 10 MHz
95
Fin = 50 MHz
89
Fin = 70 MHz
Fin = 230 MHz
64
74
70
9.4
12
66
77
82
3.5 dB Coarse gain
84
0 dB Gain
79
58
3.5 dB Coarse gain
82
60
Bits
dBc
93
Fin = 50 MHz
88
Fin = 70 MHz
Fin = 230 MHz
78
dBFS
56
0 dB Gain
Fin = 10 MHz
THD
Total harmonic distortion Fin = 170 MHz
dBFS
74.9
Fin = 50 MHz
Fin = 170 MHz
LSB
74
3.5 dB Coarse gain
Fin = 70 MHz
Fin = 230 MHz
74.0
72.2
Fin = 50 MHz
Fin = 170 MHz
60
0 dB Gain
Fin = 10 MHz
SINAD
Signal-to-noise and
distortion ratio
LVDS
dBFS
74.1
Fin = 70 MHz
Fin = 230 MHz
75
71.2
Inputs tied to common-mode
Fin = 170 MHz
62
72
Fin = 50 MHz
SINAD
Signal-to-noise and
distortion ratio
CMOS
74.6
72
85
0 dB Gain
80
3.5 dB Coarse gain
82
0 dB Gain
3.5 dB Coarse gain
66
75
dBc
76
56
78.5
59
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ELECTRICAL CHARACTERISTICS (continued)
Typical values are at 25°C, AVDD = DRVDD = 3.3 V, maximum rated sampling frequency, 50% clock duty cycle, –1 dBFS
differential analog input, internal reference mode, applies to CMOS and LVDS interfaces, unless otherwise noted.
PARAMETER
TEST CONDITIONS
TJ = -40°C to 125°C
MIN
Fin = 10 MHz
TYP
73
93
0 dB Gain
86
66
76
3.5 dB Coarse gain
87
0 dB Gain
79
58
3.5 dB Coarse gain
81
60
Fin = 10 MHz
Worst spur (other than
HD2, HD3)
89
Fin = 70 MHz
Fin = 230 MHz
UNIT
95
Fin = 50 MHz
Fin = 170 MHz
MAX
dBc
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Fin = 230 MHz
HD3
Third harmonic
distortion
MIN
96
Fin = 70 MHz
Fin = 170 MHz
TJ = 210°C
MAX
98
Fin = 50 MHz
HD2
Second harmonic
distortion
TYP
75
86
70
84
0 dB Gain
82
3.5 dB Coarse gain
84
0 dB Gain
79
75
3.5 dB Coarse gain
82
74
Fin = 10 MHz
97
Fin = 50 MHz
96
Fin = 70 MHz
95
Fin = 170 MHz
91
dBc
dBc
Fin = 230 MHz
90
IMD
2-Tone intermodulation
distortion
F1 = 185 MHz, F2 = 190 MHz,
Each tone at -7 dBFS
91
90
dBFS
Input overload recovery
Recovery to within 3% (of final value) for 6-dB
overload with sine wave input
1
1
clock
cycles
PSRR
AC Power supply
rejection ratio
For 100 mVpp signal on AVDD supply
49
48
dBc
10
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DIGITAL CHARACTERISTICS
The dc specifications refer to the condition where the digital outputs are not switching, but are permanently at a valid logic
level 0 or 1, AVDD = 3.3 V
PARAMETER
DIGITAL INPUTS
PDN, SCLK, SDATA, and SEN
TJ = -40°C to 125°C
TEST CONDITIONS
MIN
TYP
TJ = 210°C
MAX
MIN
TYP
MAX
UNIT
(1)
High-level input
voltage
2.4
2.4
0.8
0.8
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Low-level input
voltage
V
V
High-level input
current
33
33
μA
Low-level input
current
–33
–33
μA
4
4
pF
High-level output
voltage
DRVDD
DRVDD
V
Low-level output
voltage
0
0
V
2
2
pF
High-level output
voltage
1375
1375
mV
Low-level output
voltage
1025
1025
mV
350
mV
1200
1200
mV
2
2
pF
Input capacitance
DIGITAL OUTPUTS
CMOS INTERFACE, DRVDD = 1.8 to 3.3 V
Output capacitance
Output capacitance inside the
device, from each output to
ground
DIGITAL OUTPUTS
LVDS INTERFACE, DRVDD = 3.3 V, IO = 3.5 mA, RL = 100 Ω
(2)
|VOD|
Output differential
voltage
VOS
Output offset voltage,
single-ended
Common-mode voltage of
OUTP, OUTM
Output capacitance
Output capacitance inside the
device, from either output to
ground
(1)
(2)
225
350
225
SCLK and SEN function as digital input pins when they are used for serial interface programming. When used as parallel control pins,
analog voltage needs to be applied as per Table 3 & Table 4
IO Refers to the LVDS buffer current setting, RL is the differential load resistance between the LVDS output pair.
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TIMING CHARACTERISTICS – LVDS AND CMOS MODES (1)
Typical values are at 25°C, min and max values are across the full temperature range TMIN = –40°C to TMAX = 125°C or 210°C
as indicated, AVDD = DRVDD = 3.3 V, maximum rated sampling frequency, sine wave input clock, 1.5 VPP clock amplitude,
CL = 5 pF (2), IO = 3.5 mA, RL = 100 Ω (3), no internal termination, unless otherwise noted.
For timings at lower sampling frequencies, see section Output Timings in the APPLICATION INFORMATION of this data
sheet.
PARAMETER
TEST CONDITIONS
TJ = -40°C to 125°C
MIN
TYP
TJ = 210°C
MAX
MIN
TYP
MAX
UNIT
ta
Aperture delay
1.5
ns
tj
Aperture jitter
150
fs rms
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Wake-up time
(to valid data)
From global power down
15
μs
From standby
15
μs
CMOS
100
ns
LVDS
200
From output buffer
disable
Latency
9
ns
clock cycles
DDR LVDS MODE (4), DRVDD = 3.3 V
tsu
Data setup time (5)
Data valid (6) to zero-cross of
CLKOUTP
5.8
5.6
ns
th
Data hold time (5)
Zero-cross of CLKOUTP to data
becoming invalid (6)
1.3
1.5
ns
tPDI
Clock propagation
delay
Input clock rising edge zero-cross
to output clock rising edge
zero-cross
6.2
7.2
ns
LVDS bit clock
duty cycle
Duty cycle of differential clock,
(CLKOUTP-CLKOUTM),
10 ≤ Fs ≤ 125 MSPS
46%
46%
tr
tf
Data rise time,
Data fall time
Rise time measured from –50 mV
to 50 mV,
Fall time measured from 50 mV
to –50 mV,
1 ≤ Fs ≤ 125 MSPS
112
116
ps
tCLKRISE
tCLKFALL
Output clock rise
time,
Output clock fall
time
Rise time measured from –50 mV
to 50 mV,
Fall time measured from 50 mV
to –50 mV,
1 ≤ Fs ≤ 125 MSPS
112
116
ps
8
9
ns
PARALLEL CMOS MODE, DRVDD = 2.5 V to 3.3 V, default output buffer drive strength
(7)
(8)
tsu
Data setup time (5)
Data valid to 50% of CLKOUT
rising edge
th
Data hold time (5)
50% of CLKOUT rising edge to
data becoming invalid (8)
6.5
6.8
ns
tPDI
Clock propagation
delay
Input clock rising edge zero-cross
to 50% of CLKOUT rising edge
7.3
8.3
ns
Output clock duty
cycle
Duty cycle of output clock
(CLKOUT),
10 ≤ Fs ≤ 125 MSPS
42%
42%
tr
tf
Data rise time,
Data fall time
Rise time measured from 20% to
80% of DRVDD,
Fall time measured from 80% to
20% of DRVDD,
1 ≤ Fs ≤ 125 MSPS
1.9
2.1
ns
tCLKRISE
tCLKFALL
Output clock rise
time,
Output clock fall
time
Rise time measured from 20% to
80% of DRVDD,
Fall time measured from 80% to
20% of DRVDD,
1 ≤ Fs ≤ 125 MSPS
1.9
2.1
ns
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
12
Timing parameters are specified by design and not tested in production.
CL is the Effective external single-ended load capacitance between each output pin and ground.
IO Refers to the LVDS buffer current setting; RL is the differential load resistance between the LVDS output pair.
Measurements are done with a transmission line of 100 Ω characteristic impedance between the device and the load.
Setup and hold time specifications take into account the effect of jitter on the output data and clock.
Data valid refers to a logic high of +100 mV and logic low of –100 mV.
For DRVDD < 2.2 V, it is recommended to use an external clock for data capture and NOT the device output clock signal (CLKOUT).
See Parallel CMOS interface in the application section.
Data valid refers to a logic high of 2 V (1.7 V) and logic low of 0.8 V (0.7 V) for DRVDD = 3.3 V (2.5 V).
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ADD6142-HT Operating Life Derating Chart
10000000.00
1000000.00
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Estimated Life (Hours)
100000000.00
100000.00
10000.00
70
80
90
100
110
120
130
140
150
160
170
180
190
200
210
220
Continuous TJ (°C)
(1)
See data sheet for absolute maximum and minimum recommended operating conditions.
(2)
Silicon operating life design goal is 10 years at 105°C junction temperature (does not include package interconnect
life).
(3)
The predicted operating lifetime vs. junction temperature is based on reliability modeling using electromigration as the
dominant failure mechanism affecting device wearout for the specific device process and design characteristics.
Figure 1. ADS6142-HT Operating Life Derating Chart
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N+4
N+3
N+2
N+12
N+11
N+10
N+1
Sample
N
N+9
Input
Signal
ta
CLKP
Input
Clock
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CLKM
CLKOUTM
CLKOUTP
tsu
9 Clock Cycles
DDR
LVDS
Output Data
DXP, DXM
O
O
E
E – Even Bits D0,D2,D4,D6,D8,D10,D12
O – Odd Bits D1,D3,D5,D7,D9,D11,D13
E
O
O
E
N–8
N–9
O
E
N–7
E
O
N–6
O
E
N–5
E
O
E
N
N–1
tPDI
th
O
O
E
E
N+2
N+1
tPDI
CLKOUT
tsu
Parallel
CMOS
9 Clock Cycles
Output Data
D0–D13
N–8
N–9
N–7
N–6
N–5
N–1
N
th
N+1
N+2
Figure 2. Latency
Input
Clock
CLKM
CLKM
Input
Clock
CLKP
CLKP
tPDI
tPDI
Output
Clock
CLKOUTM
Output
Clock
CLKOUTP
CLKOUT
tsu
th
tsu
th
th
tsu
Output
Data Pair
(1)
(2)
Dn
Dn_Dn+1_P,
Dn_Dn+1_M
Dn
(1)
Dn+1
Output
Data
Dn
Dn
(1)
– Bits D0, D2, D4, D6, D8, D10, D12
(1)
Dn+1 – Bits D1, D3, D5, D7, D9, D11, D13
Figure 3. LVDS Mode Timing
14
(2)
Dn – Bits D0–D13
Figure 4. CMOS Mode Timing
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DEVICE PROGRAMMING MODES
The ADS6142 has several features that can be easily configured using either parallel interface control or serial
interface programming.
USING SERIAL INTERFACE PROGRAMMING ONLY
To program using the serial interface, the internal registers must first be reset to their default values, and the
RESET pin must be kept low. In this mode, SEN, SDATA, and SCLK function as serial interface pins and are
used to access the internal registers of the ADC. The registers are reset either by applying a pulse on the
RESET pin or by a high setting on the <RST> bit (D4 in register 0x00). The Serial Interface section describes
register programming and register reset in more detail.
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USING PARALLEL INTERFACE CONTROL ONLY
To control the device using the parallel interface, keep RESET tied high (AVDD). Now SEN, SCLK, SDATA, and
PDN function as parallel interface control pins. These pins can be used to directly control certain modes of the
ADC by connecting them to the correct voltage levels (as described in Table 3 to Table 5). There is no need to
apply a reset pulse.
Frequently used functions are controlled in this mode — standby, selection between LVDS/CMOS output format,
internal/external reference, and 2s complement/straight binary output format.
AVDD
(5/8) AVDD
3R
(5/8) AVDD
GND
2R
AVDD
(3/8) AVDD
(3/8) AVDD
3R
To Parallel Pin
(SCLK, SDATA, SEN)
GND
Figure 5. Simple Scheme to Configure Parallel Pins
DESCRIPTION OF PARALLEL PINS
Table 3. SCLK (Analog Control Pin)
SCLK
0
DESCRIPTION
Internal reference and 0 dB gain (full-scale = 2 VPP)
(3/8) AVDD
External reference and 0 dB gain (full-scale = 2 VPP)
(5/8) AVDD
External reference and 3.5 dB coarse gain (full-scale = 1.34 VPP)
AVDD
Internal reference and 3.5 dB coarse gain (full-scale = 1.34 VPP)
Table 4. SEN (Analog Control Pin)
SEN
DESCRIPTION
0
2s Complement format and DDR LVDS interface
(3/8) AVDD
Straight binary format and DDR LVDS interface
(5/8) AVDD
Straight binary and parallel CMOS interface
AVDD
2s Complement format and parallel CMOS interface
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Table 5. SDATA, PDN (Digital Control Pins)
SDATA
PDN
Low
Low
DESCRIPTION
Normal operation
Low
High (AVDD)
High (AVDD)
Low
High (AVDD)
High (AVDD)
Standby - only the ADC is powered down
Output buffers are powered down, fast wake-up time
Global power down. ADC, internal reference, and output buffers are powered down, slow wake-up time
SERIAL INTERFACE
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The ADC has a set of internal registers, which can be accessed through the serial interface formed by pins SEN
(Serial interface Enable), SCLK (Serial Interface Clock), SDATA (Serial Interface Data) and RESET. After device
power-up, the internal registers must be reset to their default values by applying a high-going pulse on RESET
(of width greater than 10 ns).
Serial shift of bits into the device is enabled when SEN is low. Serial data SDATA is latched at every falling edge
of SCLK when SEN is active (low). The serial data is loaded into the register at every 16th SCLK falling edge
when SEN is low. If the word length exceeds a multiple of 16 bits, the excess bits are ignored. Data is loaded in
multiples of 16-bit words within a single active SEN pulse.
The first 5 bits form the register address and the remaining 11 bits form the register data.
The interface can work with a SCLK frequency from 20 MHz down to very low speeds (a few hertz) and also with
a non-50% SCLK duty cycle.
REGISTER ADDRESS
SDATA
A4
A3
A2
A1
REGISTER DATA
A0
D10
D9
D8
D7
D6
D5
D4
tDSU
tSCLK
SCLK
D3
D2
D1
D0
tDH
tSLOADH
SEN
RESET
tSLOADS
Figure 6. Serial Interface Timing Diagram
REGISTER INITIALIZATION
After power-up, the internal registers must be reset to their default values. This is done in one of two ways:
1. Either through a hardware reset by applying a high-going pulse on the RESET pin (width greater than 10 ns)
as shown in Figure 6.
OR
2. By applying a software reset. Using the serial interface, set the <RST> bit (D4 in register 0x00) to high. This
initializes the internal registers to their default values and then self-resets the <RST> bit to low. In this case
the RESET pin is kept low.
16
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SERIAL INTERFACE TIMING
Typical values at 25°C, min and max values across the full temperature range TMIN = –40°C to TMAX = 210°C,
AVDD = DRVDD = 3.3 V (unless otherwise noted)
MIN
TYP MAX
UNIT
> DC
20
MHz
fSCLK
SCLK Frequency = 1/tSCLK
tSLOADS
SEN to SCLK Setup time
25
ns
tSLOADH
SCLK to SEN Hold time
25
ns
tDSU
SDATA Setup time
25
ns
tDH
SDATA Hold time
25
ns
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RESET TIMING
Typical values at 25°C, min and max values across the full temperature range TMIN = –40°C to TMAX = 85°C,
AVDD = DRVDD = 3.3 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
t1
Power-on delay
Delay from power-up of AVDD and DRVDD to RESET pulse active
t2
Reset pulse width
t3
tPO
TYP
MAX
UNIT
5
ms
Pulse width of active RESET signal
10
ns
Register write delay
Delay from RESET disable to SEN active
25
Power-up time
Delay from power-up of AVDD and DRVDD to output stable
6.5
ns
ms
Power Supply
AVDD, DRVDD
t1
RESET
t2
t3
SEN
NOTE: A high-going pulse on the RESET pin is required in serial interface mode in the case of initialization through a
hardware reset. For parallel interface operation, RESET has to be tied permanently HIGH.
Figure 7. Reset Timing Diagram
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SERIAL REGISTER MAP
Table 6 gives a summary of all the modes that can be programmed through the serial interface.
Table 6. Summary of Functions Supported by Serial Interface (1)
REGISTER
ADDRESS
IN HEX
D9
D8
00
<COARSE
GAIN>
Coarse gain
<LVDS
CMOS>
LVDS or
CMOS
Output
interface
0
0
<REF>
Internal or
external
Reference
04
<DATAOUT
POSN>
Output data
position
control
<CLKOUT
EDGE>
Output
clock edge
control
<CLKOUT
POSN>
Output clock
position
control
0
0
09
Bit-wise or
Byte-wise
control
0
0
0
0
0A
<DATA
FORMAT>
2s
Complemen
t or straight
binary
0
0
0E
0F
18
D7
D6
D5
D4
D3
D2
D1
D0
<RST>
Software
reset
0
<PDN
CLKOUT>
Output
clock buffer
powered
down
0
<STBY>
ADC Power
down
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
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D10
<PDN
OBUF>
Output
buffers
powered
down
0C
(1)
(2)
REGISTER FUNCTIONS
A4 - A0
0B
(2)
<TEST PATTERNS>
<CUSTOM LOW>
Custom pattern lower 9 bits
<FINE GAIN>
Fine gain 0 to 6dB
0
0
LVDS Termination
LVDS Internal termination control for output data and clock
0
0
0
0
0
<DRIVE STRENGTH>
CMOS output buffer drive strength control
<CUSTOM HIGH>
Custom pattern upper 5 bits
<LVDS CURRENT>
LVDS Current control
0
0
<CURRENT
DOUBLE>
LVDS current double
0
0
The unused bits in each register (shown by blank cells in above table) must be programmed as ‘0’.
Multiple functions in a register can be programmed in a single write operation.
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DESCRIPTION OF SERIAL REGISTERS
Each register function is explained in detail.
Table 7.
A4–A0
(hex)
00
D10
D9
D8
D7
D6
D5
D4
D3
D2
D1
D0
<PDN OBUF>
Output buffers
powered down
<COARSE
GAIN>
Coarse gain
<LVDS CMOS>
LVDS or CMOS
Output interface
0
0
<REF>
Internal or
external
reference
<RST>
Software
reset
0
<PDN CLKOUT>
Output clock
buffer powered
down
0
<STBY>
ADC Power
down
0
1
D2
0
1
D4
1
D5
0
1
D8
0
1
D9
0
1
D10
0
1
<STBY> Power down modes
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D0
Normal operation
Device enters standby mode where only ADC is powered down.
<PDN CLKOUT> Power down modes
Output clock is active (on CLKOUT pin)
Output clock buffer is powered down and becomes three-stated. Data outputs are unaffected.
<RST>
Software reset applied - resets all internal registers and the bit self-clears to 0.
<REF> Reference selection
Internal reference enabled
External reference enabled
<LVDS CMOS> Output Interface selection
Parallel CMOS interface
DDR LVDS Interface
<COARSE GAIN> Gain programming
0 dB Coarse gain
3.5 dB Coarse gain
<PDN OBUF> Power down modes
Output data and clock buffers enabled
Output data and clock buffers disabled
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Table 8.
A4–A0
(hex)
04
D8
D10
D9
D8
D7
D6
D5
D4
D3
D2
D1
D0
<DATAOUT POSN>
Output data position
control
<CLKOUT EDGE>
Output Clock edge
control
<CLKOUT POSN>
Output clock
position control
0
0
0
0
0
0
0
0
<CLKOUT POSN> Output clock position control
Default output clock position after reset. The setup/hold timings for this clock position are specified
in the timing specifications table.
1
Output clock shifted (delayed) by 400 ps
D9
0
1
D10
0
1
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0
<CLKOUT EDGE>
Use rising edge to capture data
Use falling edge to capture data
<DATAOUT_POSN>
Default position (after reset)
Data transition delayed by half clock cycle with respect to default position
Table 9.
A4–A0
(hex)
09
D10
0
1
20
D10
D9
D8
D7
D6
D5
D4
D3
D2
D1
D0
Bit-wise or
Byte-wise control
0
0
0
0
0
0
0
0
0
0
Bit-wise or byte-wise selection (DDR LVDS mode only)
Bit-wise sequence - Even data bits (D0, D2, D4,..D12) are output at the rising edge of CLKOUTP
and odd data bits (D1, D3, D5,..D13) at the falling edge of CLKOUTP
Byte-wise sequence - Lower 7 data bits (D0-D7) are output at the rising edge of CLKOUTP and
upper 7 data bits (D8-D13) at the falling edge of CLKOUTP
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Table 10.
A4–A0
(hex)
0A
D7-D5
D10
D9
D8
<DF>
2s Complement or straight
binary
0
0
001
All zeros - <D13:D0> = 0x0000
010
All ones - <D13:D0> = 0x3FFF
101
110
111
D10
0
1
D5
<TEST PATTERNS>
D4
D3
D2
D1
D0
0
0
0
0
0
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Normal operation - <D13:D0> = ADC output
100
D6
Test patterns
000
011
D7
Toggle pattern - <D13:D0> toggles between 0x2AAA and 0x1555
Digital ramp - <D13:D0> increments from 0x0000 to 0x3FFF by one code every cycle
Custom pattern - <D13:D0> = contents of CUSTOM PATTERN registers
Unused
Unused
<DATA FORMAT>
2s Complement
Straight binary
Table 11.
A4–A0
(hex)
0B
D10
D9
D8
D7
D6
D5
D4
D3
D2
<CUSTOM LOW>
Lower 9 bits of custom pattern
D1
D0
0
0
D1
D0
Table 12.
A4–A0
(hex)
0C
Reg 0B
D10-D2
Reg 0C
D4-D0
D10-D8
000
001
010
011
D10
D9
D8
<FINE GAIN>
Fine gain 0 to 6dB
D7
D6
D5
0
0
0
D4
D3
D2
<CUSTOM HIGH>
Upper 5 bits of custom pattern
<CUSTOM LOW> - Specifies lower 9 bits of custom pattern
<CUSTOM HIGH> - Specifies upper 5 bits of custom pattern
<FINE GAIN> Gain programming
0 dB Gain
1 dB Gain
2 dB Gain
3 dB Gain
100
4 dB Gain
101
5 dB Gain
110
6 dB Gain
111
Unused
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Table 13.
A4–A0
(hex)
D10
0E
0
D1-D0
D0
1
D1
0
1
D3-D2
00
01
10
11
D9-D4
D9-D7
000
001
010
011
100
101
110
111
D6-D4
000
001
010
011
100
22
D8
D7
D6
D5
D4
<LVDS TERMINATION>
LVDS Internal termination control for output data and clock
D3
D2
<LVDS
CURRENT>
LVDS Current
control
D1
D0
<CURRENT
DOUBLE>
LVDS Current
double
<CURRENT DOUBLE> LVDS current programming
LVDS Data buffer current control
Default current, set by <LVDS_CURR>
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0
D9
2x LVDS Current set by <LVDS_CURR>
LVDS Clock buffer current control
Default current, set by <LVDS_CURR>
2x LVDS Current set by <LVDS_CURR>
<LVDS CURRENT> LVDS current programming
3.5 mA
2.5 mA
4.5 mA
1.75 mA
LVDS internal termination
<DATA TERM> Internal termination for LVDS output data bits
No internal termination
300 Ω
185 Ω
115 Ω
150 Ω
100 Ω
80 Ω
65 Ω
<CLKOUT TERM> Internal termination for LVDS output clock
No internal termination
300 Ω
185 Ω
115 Ω
150 Ω
101
100 Ω
110
80 Ω
111
65 Ω
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Table 14.
A4–A0
(hex)
D10
D9
D8
0F
0
0
0
D7-D4
D7
D6
D5
D4
<DRIVE STRENGTH>
CMOS Output buffer drive strength control
D3
D2
D1
D0
0
0
0
0
<DRIVE STRENGTH> Output buffer drive strength controls
0101
WEAKER than default drive
0000
DEFAULT drive strength
1111
STRONGER than default drive strength (recommended for load capacitances > 5 pF)
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1010
MAXIMUM drive strength (recommended for load capacitances > 5 pF)
Other
Do not use
combinations
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TYPICAL CHARACTERISTICS
All plots are at 25°C, AVDD = DRVDD = 3.3 V, maximum rated sampling frequency, sine wave input clock, 1.5 VPP differential
clock amplitude, 50% clock duty cycle, –1 dBFS differential analog input, internal reference mode, 0 dB gain, CMOS output
interface (unless otherwise noted)
FFT for 230 MHz INPUT SIGNAL
INTERMODULATION DISTORTION (IMD) vs FREQUENCY
0
0
SFDR = 83 dBc
SINAD = 71.2 dBFS
SNR = 71.9 dBFS
THD = 79.8 dBc
−20
Amplitude − dB
−40
−60
−80
−100
−120
−60
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Amplitude − dB
−40
fIN1 = 190 MHz, –7 dBFS
fIN2 = 185 MHz, –7 dBFS
2-Tone IMD = –88 dBFS
SFDR = –92 dBFS
−20
−80
−100
−120
−140
−140
−160
−160
0
10
20
30
f − Frequency − MHz
0
10
Figure 8.
SNR vs INPUT FREQUENCY
74
92
88
84
80
76
Gain = 0 dB
72
Gain = 0 dB
72
Gain = 3.5 dB
SNR − dBFS
SFDR − dBc
G058
76
96
70
Gain = 3.5 dB
68
66
68
64
64
60
62
0
50
100 150 200 250 300 350 400 450 500
fIN − Input Frequency − MHz
0
50
G060
Figure 11.
SFDR vs INPUT FREQUENCY (LVDS interface)
100
100 150 200 250 300 350 400 450 500
fIN − Input Frequency − MHz
G059
Figure 10.
SNR vs INPUT FREQUENCY (LVDS interface)
76
96
74
92
Gain = 0 dB
88
72
Gain = 3.5 dB
84
80
76
SNR − dBFS
SFDR − dBc
30
Figure 9.
SFDR vs INPUT FREQUENCY
100
20
f − Frequency − MHz
G057
Gain = 0 dB
72
70
Gain = 3.5 dB
68
66
68
64
64
60
62
0
50
100 150 200 250 300 350 400 450 500
fIN − Input Frequency − MHz
0
50
G061
Figure 12.
24
100 150 200 250 300 350 400 450 500
fIN − Input Frequency − MHz
G062
Figure 13.
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TYPICAL CHARACTERISTICS (continued)
All plots are at 25°C, AVDD = DRVDD = 3.3 V, maximum rated sampling frequency, sine wave input clock, 1.5 VPP differential
clock amplitude, 50% clock duty cycle, –1 dBFS differential analog input, internal reference mode, 0 dB gain, CMOS output
interface (unless otherwise noted)
SFDR vs INPUT FREQUENCY ACROSS GAINS
SINAD vs INPUT FREQUENCY ACROSS GAINS
95
76
Input adjusted to get −1dBFS input
Input adjusted to get −1dBFS input
74
90
3 dB
SINAD − dBFS
6 dB
80
1 dB
0 dB
75
5 dB
2 dB
70
0 dB 1 dB
72
70
68
3 dB
66
4 dB
64
4 dB
65
5 dB
62
60
100
200
300
400
fIN − Input Frequency − MHz
500
0
100
200
G063
Figure 14.
fIN = 70.1 MHz
DRVDD = 3.3 V
79
104
78
86
84
82
80
3.0
77
76
SNR
75
SNR − dBFS
SFDR − dBc
88
74
73
3.1
3.2
3.3
3.4
3.5
fIN = 10.1 MHz
AVDD = 3.3 V
75
100
74
98
72
94
71
2.0
2.2
2.4
2.6
76
70
SNR
SFDR
100
72
90
66
64
62
fIN = 70 MHz
-55
25
125
3.4
70
3.6
G066
210
110
74
70
74
72
3.2
PERFORMANCE vs INPUT AMPLITUDE
76
68
78
3.0
Figure 17.
60
SFDR − dBc, dBFS
80
2.8
DRVDD − Supply Voltage − V
G065
SNR- - dBFs
SFDR
- - dBc
82
73
SFDR
96
PERFORMANCE vs TEMPERATURE
84
76
SNR
Figure 16.
86
77
102
92
1.8
72
3.6
AVDD − Supply Voltage − V
88
G064
PERFORMANCE vs DRVDD
SFDR
90
500
106
80
SFDR − dBc
92
400
Figure 15.
PERFORMANCE vs AVDD
94
300
fIN − Input Frequency − MHz
SNR − dBFS
0
96
6 dB
90
SFDR (dBFS)
85
80
80
75
SNR (dBFS)
70
70
60
65
SNR − dBFS
60
2 dB
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SFDR − dBc
85
SFDR (dBc)
50
60
40
30
−60
55
fIN = 20.1 MHz
−50
T - Temperature - °C
−40
−30
−20
−10
50
0
Input Amplitude − dBFS
Figure 18.
G068
Figure 19.
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TYPICAL CHARACTERISTICS (continued)
All plots are at 25°C, AVDD = DRVDD = 3.3 V, maximum rated sampling frequency, sine wave input clock, 1.5 VPP differential
clock amplitude, 50% clock duty cycle, –1 dBFS differential analog input, internal reference mode, 0 dB gain, CMOS output
interface (unless otherwise noted)
PERFORMANCE vs CLOCK AMPLITUDE
fIN = 20.1 MHz
79
SFDR
90
SNR
75
74
82
80
0.5
86
1.0
1.5
2.0
2.5
82
73
78
72
73
74
72
3.0
70
Input Clock Amplitude − VPP
30
35
40
45
70
65
70
G070
PERFORMANCE IN EXTERNAL REFERENCE MODE
95
82
fIN = 20.1 MHz
External Reference Mode
93
20
15
5
0
SFDR − dBc
Occurence − %
60
80
SFDR
25
10
91
78
89
76
SNR
87
85
1.30
8202 8203 8204 8205 8206 8207 8208 8209 8210 8211
Output Code
1.35
G071
Figure 22.
26
55
Figure 21.
RMS (LSB) = 1.041
30
50
Input Clock Duty Cycle − %
G069
OUTPUT NOISE HISTOGRAM WITH
INPUTS TIED TO COMMON-MODE
35
71
fIN = 10.1 MHz
Figure 20.
40
74
SNR
1.40
1.45
1.50
1.55
VVCM − VCM Voltage − V
1.60
SNR − dBFS
84
75
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76
86
76
90
77
88
77
SFDR
94
78
SFDR − dBc
92
SNR − dBFS
94
SFDR − dBc
PERFORMANCE vs INPUT CLOCK DUTY CYCLE
98
80
SNR − dBFS
96
74
1.65
72
1.70
G072
Figure 23.
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TYPICAL CHARACTERISTICS - LOW SAMPLING FREQUENCIES
All plots are at 25°C, AVDD = DRVDD = 3.3 V, sine wave input clock, 1.5 VPP differential clock amplitude, 50% clock duty
cycle, –1 dBFS differential analog input, internal reference mode, 0 dB gain, CMOS output interface (unless otherwise noted)
FS = 40 MSPS
SFDR vs INPUT FREQUENCY
SNR vs INPUT FREQUENCY
100
76
96
74
Gain = 0 dB
72
84
SNR − dBFS
88
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SFDR − dBc
92
Gain = 3.5 dB
80
76
72
Gain = 3.5 dB
68
66
Gain = 0 dB
68
70
64
64
60
62
0
50
100 150 200 250 300 350 400 450 500
fIN − Input Frequency − MHz
0
50
100 150 200 250 300 350 400 450 500
fIN − Input Frequency − MHz
G073
Figure 24.
G074
Figure 25.
FS = 25 MSPS
SFDR vs INPUT FREQUENCY
100
SNR vs INPUT FREQUENCY
76
74
90
SNR − dBFS
SFDR − dBc
72
Gain = 3.5 dB
80
70
Gain = 0 dB
68
Gain = 3.5 dB
66
Gain = 0 dB
60
70
64
50
62
0
50
100 150 200 250 300 350 400 450 500
fIN − Input Frequency − MHz
0
50
G075
Figure 26.
100 150 200 250 300 350 400 450 500
fIN − Input Frequency − MHz
G076
Figure 27.
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COMMON PLOTS
All plots are at 25°C, AVDD = DRVDD = 3.3 V, sine wave input clock, 1.5 VPP differential clock amplitude, 50% clock duty
cycle, –1 dBFS differential analog input, internal reference mode, 0 dB gain, CMOS output interface (unless otherwise noted)
POWER DISSIPATION
vs
SAMPLING FREQUENCY (DDR LVDS and CMOS)
COMMON-MODE REJECTION RATIO vs FREQUENCY
0.8
0.7
PD − Power Dissipation − W
0
−10
−20
−40
−50
−60
−70
−80
0.6
0.5
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CMRR − dBc
−30
fIN = 2.5 MHz
CL = 5 pF
LVDS
0.4
0.3
CMOS
0.2
0.1
−90
0.0
−100
0
50
100
150
200
250
0
300
f − Frequency − MHz
25
50
75
100
fS − Sampling Frequency − MSPS
G077
Figure 28.
125
G078
Figure 29.
DRVDD current
vs
SAMPLING FREQUENCY ACROSS LOAD CAPACITANCE (CMOS)
30
1.8 V, No Load
DRVDD Current − mA
25
1.8 V, 5 pF
20
3.3 V, No Load
3.3 V, 5 pF
15
3.3 V, 10 pF
10
5
0
0
25
50
75
100
fS − Sampling Frequency − MSPS
125
G079
Figure 30.
28
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Contour Plots Across Input and Sampling Frequencies
125
120
90
72
78
81
66
69
84
84
63
100
75
81
87
90
84
90
87
70
72
78
90
87
80
66
60
69
81
63
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fS - Sampling Frequency - MSPS
110
75
84
84
87
78
60
75
84
50
90
69
72
66
40
93
30
25
10
50
78
81
84
150
100
75
63
200
250
300
400
350
60
450
500
fIN - Input Frequency - MHz
60
80
75
70
65
85
90
95
SFDR - dBc
M0049-15
Figure 31. SFDR Contour (no gain, Fs = 2 VPP)
125
120
84
87
87
87
84
75
78
81
fS - Sampling Frequency - MSPS
110
69
87
100
72
66
90
75
90
90
80
90
87
70
60
78
81
87
93
84
69
90
75
81
93
72
66
78
50
90
90
40
30
25
10
87
84
93
93
50
100
150
81
78
75
200
250
72
300
69
350
400
63
450
500
fIN - Input Frequency - MHz
60
70
65
75
80
85
90
SFDR - dBc
95
M0049-16
Figure 32. SFDR Contour (with 3.5 dB coarse gain, FS = 1.34 VPP)
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Contour Plots Across Input and Sampling Frequencies (continued)
125
120
66
74
70
90
71
72
73
100
74
68
69
67
80
71
70
70
73
72
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fS - Sampling Frequency - MSPS
110
67
68
69
60
50
40
71
75
68
69
70
30
25
10
50
72
73
74
150
100
70
71
200
250
69
300
67
66
68
400
350
450
65
64
500
fIN - Input Frequency - MHz
64
70
68
66
72
74
SNR - dBFS
M0048-15
Figure 33. SNR Contour (no gain, FS = 2 VPP)
125
120
68
69
70
72
67
66
fS - Sampling Frequency - MSPS
110
100
71
73
67
90
72
80
70
68
69
70
73
60
71
68
50
69
70
72
40
73
30
25
10
50
71
100
150
70
200
250
67
68
69
300
66
350
400
450
65
64
500
fIN - Input Frequency - MHz
64
66
68
70
72
SNR - dBFS
74
M0048-16
Figure 34. SNR Contour (with 3.5 dB coarse gain, FS = 1.34 VPP)
30
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APPLICATION INFORMATION
THEORY OF OPERATION
The ADS6142 is a low power, 14-bit pipeline ADC in a CMOS process with a 65 MSPS sampling frequency. This
device is based on switched capacitor technology and run off a single 3.3-V supply. The conversion process is
initiated by the rising edge of the external input clock. Once the signal is captured by the input sample and hold,
the input sample is sequentially converted by a series of lower resolution stages, with the outputs combined in a
digital correction logic block. At every clock edge, the sample propagates through the pipeline resulting in a data
latency of 9 clock cycles. The output is available as 14-bit data, in DDR LVDS or CMOS and coded in either
straight offset binary or binary 2s complement format.
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ANALOG INPUT
The analog input consists of a switched-capacitor based differential sample and hold architecture, shown in
Figure 35.
This differential topology results in good ac-performance even for high input frequencies at high sampling rates.
The INP and INM pins have to be externally biased around a common-mode voltage of 1.5 V available on the
VCM pin. For a full-scale differential input, each input pin (INP, INM) has to swing symmetrically between VCM +
0.5 V and VCM – 0.5 V, resulting in a 2VPP differential input swing. The maximum swing is determined by the
internal reference voltages REFP (2.5 V nominal) and REFM (0.5 V, nominal).
Sampling
Switch
Lpkg
»1 nH
Sampling
Capacitor
RCR Filter
INP
Cbond
»1 pF
25 W
50 W
Resr
200 W
3.2 pF
Lpkg
»1 nH
Ron
15 W
Cpar2
1 pF
Csamp
4.0 pF
Ron
10 W
Cpar1
0.8 pF
50 W
Ron
15 W
25 W
Csamp
4.0 pF
INM
Cbond
»1 pF
Resr
200 W
Sampling
Capacitor
Cpar2
1 pF
Sampling
Switch
Figure 35. Input Stage
The input sampling circuit has a high 3dB bandwidth that extends up to 300 MHz (measured from the input pins
to the voltage across the sampling capacitors).
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1
0
Magnitude − dB
−1
−2
−3
−4
−5
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−6
−7
0
100
200
300
400
500
600
fIN − Input Frequency − MHz
G080
Figure 36. ADC Analog Input Bandwidth
Drive Circuit Requirements
For optimum performance, the analog inputs must be driven differentially. This improves the common-mode
noise immunity and even-order harmonic rejection.
A 5-Ω resistor in series with each input pin is recommended to damp out ringing caused by the package
parasitics. It is also necessary to present low impedance (< 50 Ω) for the common-mode switching currents. For
example, this is achieved by using two resistors from each input terminated to the common-mode voltage (VCM).
In addition to the above, the drive circuit may have to be designed to provide a low insertion loss over the
desired frequency range and matched impedance to the source. While doing this, the ADC input impedance (Zin)
must be considered. Over a wide frequency range, the input impedance can be approximated by a parallel
combination of Rin and Cin (Zin = Rin||Cin).
R − Resistance − kΩ
100
10
1
0.1
0.01
0
100
200
300
400
500
f − Frequency − MHz
600
G083
Figure 37. ADC Input Resistance, Rin
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9
8
C − Capacitance − pF
7
6
5
4
3
2
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1
0
0
100
200
300
400
500
f − Frequency − MHz
600
G084
Figure 38. ADC Input Capacitance, Cin
Using RF-Transformer Based Drive Circuits
Figure 39 shows a configuration using a single 1:1 turn ratio transformer (for example, Coilcraft WBC1-1) that
can be used for low input frequencies (about 100 MHz).
The single-ended signal is fed to the primary winding of the RF transformer. The transformer is terminated on the
secondary side. Putting the termination on the secondary side helps to shield the kickbacks caused by the
sampling circuit from the RF transformer’s leakage inductances. The termination is accomplished by two resistors
connected in series, with the center point connected to the 1.5 V common mode (VCM pin). The value of the
termination resistors (connected to common mode) has to be low (< 100 Ω) to provide a low-impedance path for
the ADC common-mode switching current.
TF_ADC
0.1 mF
5W
INP
0.1 mF
25 W
25 W
5W
INM
1 :1
VCM
Figure 39. Single Transformer Drive Circuit
At high input frequencies, the mismatch in the transformer parasitic capacitance (between the windings) results
in degraded even-order harmonic performance. Connecting two identical RF transformers back-to-back helps
minimize this mismatch, and good performance is obtained for high frequency input signals. Figure 40 shows an
example using two transformers (Coilcraft WBC1-1). An additional termination resistor pair (enclosed within the
dotted box in Figure 40) may be required between the two transformers to improve the balance between the P
and M sides. The center point of this termination must be connected to ground.
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5W
0 .1mF
INP
50 W
50 W
0 .1mF
50 W
50 W
5W
INM
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1:1
1:1
VCM
Figure 40. Two Transformer Drive Circuit
REFERENCE
The ADS6142 has built-in internal references REFP and REFM, requiring no external components. Design
schemes are used to linearize the converter load seen by the references; this and the integration of the requisite
reference capacitors on-chip eliminates the need for external decoupling. The full-scale input range of the
converter is controlled in the external reference mode as explained below. The internal or external reference
modes can be selected by programming the serial interface register bit <REF> (Table 7).
INTREF
VCM
INTERNAL
REFERENCE
1 kW
4 kW
INTREF
EXTREF
REFM
REFP
Figure 41. Reference Section
Internal Reference
When the device is in internal reference mode, the REFP and REFM voltages are generated internally.
Common-mode voltage (1.5 V nominal) is output on the VCM pin, which can be used to externally bias the
analog input pins.
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External Reference
When the device is in external reference mode, VCM acts as a reference input pin. The voltage forced on the
VCM pin is buffered and gained by 1.33 internally, generating the REFP and REFM voltages. The differential
input voltage corresponding to full-scale is given by Equation 1.
Full−scale differential input pp + (Voltage forced on VCM) 1.33
(1)
In this mode, the 1.5-V common-mode voltage to bias the input pins has to be generated externally. There is no
change in performance compared to internal reference mode.
COARSE GAIN AND PROGRAMMABLE FINE GAIN
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The ADS6142 includes gain settings that can be used to improve SFDR performance (compared to 0 dB gain
mode). The gain settings are 3.5 dB coarse gain and 0 dB to 6 dB programmable fine gain. For each gain
setting, the analog input full-scale range scales proportionally, as shown in Table 15.
The coarse gain is a fixed setting of 3.5 dB and is designed to improve SFDR with little degradation in SNR. The
fine gain is programmable in 1 dB steps from 0 dB to 6 dB. With fine gain, SFDR improvement is also achieved,
but at the expense of SNR (there is about 1 dB SNR degradation for every 1 dB of fine gain).
So, the fine gain can be used to trade-off between SFDR and SNR. The coarse gain makes it possible to get the
best SFDR but without losing SNR significantly. At high input frequencies, the gains are especially useful as the
SFDR improvement is significant with marginal degradation in SINAD. The gains can be programmed using the
register bits <COARSE GAIN> (see Table 7) and <FINE GAIN> (see Table 12). Note that the default gain after
reset is 0 dB.
Table 15. Full-Scale Range Across Gains
GAIN, dB
TYPE
FULL-SCALE RANGE, VPP
0
Default after reset
2.00
3.5
Coarse setting (fixed)
1.34
1
1.78
2
1.59
3
4
Fine gain (programmable)
1.42
1.26
5
1.12
6
1.00
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CLOCK INPUT
The clock inputs of the ADS6142 can be driven differentially (SINE, LVPECL, or LVDS) or single-ended
(LVCMOS), with little or no difference in performance between configurations. The common-mode voltage of the
clock inputs is set to VCM using internal 5-kΩ resistors as shown in Figure 42. This allows the use of
transformer-coupled drive circuits for the sine wave clock, or ac-coupling for the LVPECL, LVDS clock sources
(see Figure 44 and Figure 45).
For best performance, it is recommended to drive the clock inputs differentially, reducing susceptibility to
common-mode noise. In this case, it is best to connect both clock inputs to the differential input clock signal with
0.1-μF capacitors, as shown in Figure 44. A single-ended CMOS clock can be ac-coupled to the CLKP input,
with CLKM connected to ground with a 0.1-μF capacitor, as shown in Figure 45.
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For high input frequency sampling, a clock source with very low jitter is recommended. Band-pass filtering of the
clock source can help reduce the effect of jitter. There is no change in performance with a non-50% duty cycle
clock input.
Clock Buffer
Lpkg
» 1 nH
CLKP
10 W
Cbond
» 1 pF
Ceq
Ceq
5 kW
Resr
» 100 W
VCM
6 pF
5 kW
Lpkg
» 1 nH
CLKM
10 W
Cbond
» 1 pF
Resr
» 100 W
Ceq » 1 to 3 pF, equivalent input capacitance of clock buffer
Figure 42. Internal Clock Buffer
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1000
Impedance (Magnitude) − Ω
900
800
700
600
500
400
300
200
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100
0
0
25
50
75
100
125
Clock Frequency − MHz
G082
Figure 43. Clock Buffer Input Impedance
0.1 mF
CLKP
Differential Sine-Wave
or PECL or LVDS
Clock Input
0.1 mF
CLKM
ADS6142
Figure 44. Differential Clock Driving Circuit
0.1 mF
CMOS Clock Input
CLKP
0.1 mF
CLKM
ADS6142
Figure 45. Single-Ended Clock Driving Circuit
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POWER-DOWN MODES
The ADS6142 has four power-down modes – global power down, standby, output buffer disable, and input clock
stopped. These modes can be set using the serial interface or using the parallel interface (pins SDATA and
PDN).
Table 16. Power-Down Modes
POWER-DOWN
MODES
Normal operation
PARALLEL INTERFACE
SDATA
PDN
Low
Low
SERIAL INTERFACE
REGISTER BIT
(Table 7)
TOTAL POWER,
mW
417
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<PDN OBUF>=0 and
<STBY>=0
WAKE-UP TIME
(to valid data)
-
Standby
Low
High
<PDN OBUF>=0 and
<STBY>=1
72
Slow (15 μs)
Output buffer disable
High
Low
<PDN OBUF>=1 and
<STBY>=0
408
Fast (200 ns)
Global power down
High
High
<PDN OBUF>=1 and
<STBY>=1
30
Slow (15 μs)
Global Power Down
In this mode, the A/D converter, internal references, and the output buffers are powered down and the total
power dissipation reduces to about 30 mW. The output buffers are in a high-impedance state. The wake-up time
from the global power down to output data becoming valid in normal mode is a maximum of 50 μs. Note that
after coming out of global power down, optimum performance is achieved after the internal reference voltages
have stabilized (about 1 ms).
Standby
Only the A/D converter is powered down and total power dissipation is approximately 72 mW. The wake-up time
from standby to output data becoming valid is a maximum of 50 μs.
Output Buffer Disable
The data output buffers can be disabled, reducing total power to about 408 mW. With the buffers disabled, the
outputs are in a high-impedance state. The wake-up time from this mode to data becoming valid in normal mode
is a maximum of 500 ns in LVDS mode and 200 ns in CMOS mode.
Input Clock Stop
The converter enters this mode when the input clock frequency falls below 1 MSPS. Power dissipation is
approximately 120 mW, and the wake-up time from this mode to data becoming valid in normal mode is a
maximum of 50 μs.
Power Supply Sequence
During power-up, the AVDD and DRVDD supplies can come up in any sequence. The two supplies are
separated inside the device. Externally, they can be driven from separate supplies or from a single supply.
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DIGITAL OUTPUT INTERFACE
The ADS6142 outputs 14 data bits together with an output clock. The output interface is either parallel CMOS or
DDR LVDS voltage levels and can be selected using the serial register bit <LVDS CMOS> or parallel pin SEN.
Parallel CMOS Interface
In CMOS mode, the output buffer supply (DRVDD) can be operated over a wide range from 1.8 V to 3.3 V
(typical). Each data bit is output on a separate pin as a CMOS voltage level, every clock cycle.
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For DRVDD ≥ 2.2 V, it is recommended to use the CMOS output clock (CLKOUT) to latch data in the receiving
chip. The rising edge of CLKOUT can be used to latch data in the receiver, even at the highest sampling speed
(125 MSPS). It is recommended to minimize the load capacitance seen by the data and clock output pins by
using short traces to the receiver. Also, match the output data and clock traces to minimize the skew between
them.
For DRVDD < 2.2 V, it is recommended to use an external clock (for example, input clock delayed to get desired
setup/hold times).
Output Clock Position Programmability
There is an option to shift (delay) the output clock position so that the setup time increases by 400 ps (typical,
with respect to the default timings specified). This may be useful if the receiver needs more setup time,
especially at high sampling frequencies. This can be programmed using the serial interface register bit
<CLKOUT_POSN> (Table 8).
Output Buffer Strength Programmability
Switching noise (caused by CMOS output data transitions) can couple into the analog inputs during the instant of
sampling and degrade the SNR. The coupling and SNR degradation increases as the output buffer drive is made
stronger. To minimize this, the ADS6142 CMOS output buffers are designed with a controlled drive strength for
the best SNR. The default drive strength also ensures a wide data stable window for load capacitances up to 5
pF and a DRVDD supply voltage ≥ 2.2 V.
To ensure a wide data stable window for load capacitances > 5 pF, there is an option to increase the drive
strength using the serial interface (<DRIVE STRENGTH>, see Table 14). Note that for a DRVDD supply voltage
< 2.2 V, it is recommended to use the maximum drive strength (for any value of load capacitance).
CMOS Mode Power Dissipation
With CMOS outputs, the DRVDD current scales with the sampling frequency and the load capacitance on every
output pin. The maximum DRVDD current occurs when each output bit toggles between 0 and 1 every clock
cycle. In actual applications, this condition is unlikely to occur. The actual DRVDD current would be determined
by the average number of output bits switching, which is a function of the sampling frequency and the nature of
the analog input signal.
Digital current due to CMOS output switching = CL × DRVDD x (N x FAVG)
where CL = load capacitance, N × FAVG = average number of output bits switching
(2)
Figure 30 shows the current with various load capacitances across sampling frequencies with a 2-MHz analog
input frequency.
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Pins
OVR
CLKOUT
D0
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D1
CMOS
Output Buffers
D2
D3
D4
D5
D6
14 bit ADC data
D7
D8
D9
D10
D11
D12
D13
ADS614X
Figure 46. CMOS Output Buffers
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DDR LVDS Interface
The LVDS interface works only with a 3.3-V DRVDD supply. In this mode, the 14 data bits and the output clock
are available as LVDS (Low Voltage Differential Signal) levels. Two successive data bits are multiplexed and
output on each LVDS differential pair every clock cycle (DDR - Double Data Rate, see Figure 47 ). So, there are
7 LVDS output pairs for the 14 data bits and 1 LVDS output pair for the output clock.
LVDS Buffer Current Programmability
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The default LVDS buffer output current is 3.5 mA. When terminated by 100 Ω, this results in a 350-mV
single-ended voltage swing (700-mVPP differential swing). The LVDS buffer currents can also be programmed to
2.5 mA, 4.5 mA, and 1.75 mA (register bits <LVDS CURRENT>, see Table 13). In addition, there is a current
double mode, where this current is doubled for the data and output clock buffers (register bits <CURRENT
DOUBLE>, see Table 13).
Pins
CLKOUTP
Output Clock
CLKOUTM
D0_D1_P
Data bits D0, D1
LVDS Buffers
D0_D1_M
D2_D3_P
Data bits D2, D3
D2_D3_M
D4_D5_P
Data bits D4, D5
D4_D5_M
14-Bit ADC Data
D6_D7_P
Data bits D6, D7
D6_D7_M
D8_D9_P
Data bits D8, D9
D8_D9_M
D10_D11_P
Data bits D10, D11
D10_D11_M
D12_D13_P
Data bits D12, D13
D12_D13_M
ADS614x
Figure 47. DDR LVDS Outputs
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Even data bits D0, D2, D4, D6, D8, D10, and D12 are output at the rising edge of CLKOUTP and the odd data
bits D1, D3, D5, D7, D9, D11, and D13 are output at the falling edge of CLKOUTP. Both the rising and falling
edges of CLKOUTP must be used to capture all 14 data bits (see Figure 48).
CLKOUTM
CLKOUTP
D0
D1
D0
D1
D2_D3_P,
D2_D3_M
D2
D3
D2
D3
D4_D5_P,
D4_D5_M
D4
D5
D4
D5
D6_D7_P,
D6_D7_M
D6
D7
D6
D7
D8_D9_P,
D8_D9_M
D8
D9
D8
D9
D10_D11_P,
D10_D11_M
D10
D11
D10
D11
D12_D13_P,
D12_D13_M
D12
D13
D12
D13
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D0_D1_P,
D0_D1_M
Sample N
Sample N+1
Figure 48. DDR LVDS Interface
LVDS Buffer Internal Termination
An internal termination option is available (using the serial interface), by which the LVDS buffers are differentially
terminated inside the device. The termination resistances available are – 300 Ω, 185 Ω, and 150 Ω (nominal with
±20% variation). Any combination of these three terminations can be programmed; the effective termination is
the parallel combination of the selected resistances. This results in eight effective terminations from open (no
termination) to 65 Ω.
The internal termination helps to absorb any reflections coming from the receiver end, improving the signal
integrity. With 100-Ω internal and 100-Ω external termination, the voltage swing at the receiver end is halved
(compared to no internal termination). The voltage swing can be restored by using the LVDS current double
mode. Figure 49 and Figure 50 compare the LVDS eye diagrams without and with internal termination (100 Ω).
With internal termination, the eye looks clean even with 10-pF load capacitance (from each output pin to ground).
The termination is programmed using register bits <DATA TERM> and <CLKOUT TERM> (see Table 13).
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Figure 49. LVDS Eye Diagram - No Internal
Termination
5-pF Load Capacitance
Blue Trace - Output Clock (CLKOUT)
Pink Trace - Output Data
Figure 50. LVDS Eye Diagram with 100-Ω Internal
Termination
10-pF Load Capacitance
Blue Trace - Output Clock (CLKOUT)
Pink Trace - Output Data
Output Data Format
Two output data formats are supported – 2s complement and offset binary. They can be selected using the
parallel control pin SEN or the serial interface register bit <DATA FORMAT> (see Table 10).
Output Timings
The tables below show the timings at lower sampling frequencies.
Table 17. Timing Characteristics at Lower Sampling Frequencies
Fs, MSPS
tsu DATA SETUP TIME, ns
MIN
TYP
th DATA HOLD TIME, ns
MAX
MIN
TYP
(1) (2)
tPDI CLOCK PROPAGATION DELAY, ns
MAX
MIN
TYP
MAX
CMOS INTERFACE, DRVDD = 2.5 V to 3.3 V
40
20
10
12.8
11.2
25
23
50
48
6.5
DDR LVDS INTERFACE, DRVDD = 3.3 V
40
20
10
(1)
(2)
10.8
1.7
5.8
23
1.7
6.5
48
1.7
6.5
Timing parameters are specified by design and not tested in production.
Timings are specified with default output buffer drive strength and CL= 5 pF.
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BOARD DESIGN CONSIDERATIONS
Grounding
A single ground plane is sufficient to give good performance, provided the analog, digital, and clock sections of
the board are cleanly partitioned. See the EVM User Guide (SLWU028) for details on layout and grounding.
Supply Decoupling
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As the ADS6142 already includes internal decoupling, minimal external decoupling can be used without loss in
performance. Note that decoupling capacitors can help filter external power supply noise, so the optimum
number of capacitors would depend on the actual application. The decoupling capacitors should be placed very
close to the converter supply pins.
It is recommended to use separate supplies for the analog and digital supply pins to isolate digital switching
noise from sensitive analog circuitry. In case only a single 3.3-V supply is available, it should be routed first to
AVDD. It can then be tapped and isolated with a ferrite bead (or inductor) with decoupling capacitor, before being
routed to DRVDD.
Exposed Thermal Pad
It is necessary to solder the exposed pad at the bottom of the package to a ground plane for best thermal
performance. For detailed information, see application notes QFN Layout Guidelines (SLOA122) and QFN/SON
PCB Attachment (SLUA271).
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DEFINITION OF SPECIFICATIONS
Analog Bandwidth
The analog input frequency at which the power of the fundamental is reduced by 3 dB with respect to the low
frequency value.
Aperture Delay
The delay in time between the rising edge of the input sampling clock and the actual time at which the sampling
occurs.
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Aperture Uncertainty (Jitter)
The sample-to-sample variation in aperture delay.
Clock Pulse Width/Duty Cycle
The duty cycle of a clock signal is the ratio of the time the clock signal remains at a logic high (clock pulse width)
to the period of the clock signal. Duty cycle is typically expressed as a percentage. A perfect differential
sine-wave clock results in a 50% duty cycle.
Maximum Conversion Rate
The maximum sampling rate at which certified operation is given. All parametric testing is performed at this
sampling rate unless otherwise noted.
Minimum Conversion Rate
The minimum sampling rate at which the ADC functions.
Differential Nonlinearity (DNL)
An ideal ADC exhibits code transitions at analog input values spaced exactly 1 LSB apart. The DNL is the
deviation of any single step from this ideal value, measured in units of LSBs.
Integral Nonlinearity (INL)
The INL is the deviation of the ADC’s transfer function from a best fit line determined by a least squares curve fit
of that transfer function, measured in units of LSBs.
Gain Error
The gain error is the deviation of the ADC’s actual input full-scale range from its ideal value. The gain error is
given as a percentage of the ideal input full-scale range.
Offset Error
The offset error is the difference, given in number of LSBs, between the ADC’s actual average idle channel
output code and the ideal average idle channel output code. This quantity is often mapped into mV.
Temperature Drift
The temperature drift coefficient (with respect to gain error and offset error) specifies the change per degree
Celsius of the parameter from TMIN to TMAX. It is calculated by dividing the maximum deviation of the parameter
across the TMIN to TMAX range by the difference TMAX–TMIN.
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Signal-to-Noise Ratio
SNR is the ratio of the power of the fundamental (PS) to the noise floor power (PN), excluding the power at dc
and the first nine harmonics.
P
SNR + 10Log 10 s
PN
(3)
SNR is either given in units of dBc (dB to carrier) when the absolute power of the fundamental is used as the
reference, or dBFS (dB to full scale) when the power of the fundamental is extrapolated to the converter’s
full-scale range.
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Signal-to-Noise and Distortion (SINAD)
SINAD is the ratio of the power of the fundamental (PS) to the power of all the other spectral components
including noise (PN) and distortion (PD), but excluding dc.
Ps
SINAD + 10Log 10
PN ) PD
(4)
SINAD is either given in units of dBc (dB to carrier) when the absolute power of the fundamental is used as the
reference, or dBFS (dB to full scale) when the power of the fundamental is extrapolated to the converter’s
full-scale range.
Effective Number of Bits (ENOB)
The ENOB is a measure of a converter’s performance as compared to the theoretical limit based on quantization
noise.
ENOB + SINAD * 1.76
6.02
(5)
Total Harmonic Distortion (THD)
THD is the ratio of the power of the fundamental (PS) to the power of the first nine harmonics (PD).
P
THD + 10Log 10 s
PN
(6)
THD is typically given in units of dBc (dB to carrier).
Spurious-Free Dynamic Range (SFDR)
The ratio of the power of the fundamental to the highest other spectral component (either spur or harmonic).
SFDR is typically given in units of dBc (dB to carrier).
Two-Tone Intermodulation Distortion
IMD3 is the ratio of the power of the fundamental (at frequencies f1 and f2) to the power of the worst spectral
component at either frequency 2f1–f2 or 2f2–f1. IMD3 is either given in units of dBc (dB to carrier) when the
absolute power of the fundamental is used as the reference, or dBFS (dB to full scale) when the power of the
fundamental is extrapolated to the converter’s full-scale range.
DC Power Supply Rejection Ratio (DC PSRR)
The DC PSSR is the ratio of the change in offset error to a change in analog supply voltage. The DC PSRR is
typically given in units of mV/V.
46
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AC Power Supply Rejection Ratio (AC PSRR)
AC PSRR is the measure of rejection of variations in the supply voltage of the ADC. If ΔVSUP is the change in the
supply voltage and ΔVOUT is the resultant change in the ADC output code (referred to the input), then
DVOUT
PSRR = 20Log 10
(Expressed in dBc)
DVSUP
(7)
Common-Mode Rejection Ratio (CMRR)
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CMRR is the measure of rejection of variations in the input common-mode voltage of the ADC. If ΔVcm is the
change in the input common-mode voltage and ΔVOUT is the resultant change in the ADC output code (referred
to the input), then
DVOUT
CMRR = 20Log10
(Expressed in dBc)
DVCM
(8)
Voltage Overload Recovery
The number of clock cycles taken to recover to less than 1% error for a 6-dB overload on the analog inputs. A
6-dBFS sine wave at Nyquist frequency is used as the test stimulus.
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PACKAGE OPTION ADDENDUM
www.ti.com
24-Dec-2011
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PACKAGING INFORMATION
Orderable Device
ADS6142SKGD1
Status
(1)
Package Type Package
Drawing
ACTIVE
(1)
XCEPT
KGD
Pins
Package Qty
0
80
Eco Plan
TBD
(2)
Lead/
Ball Finish
Call TI
MSL Peak Temp
(3)
Samples
(Requires Login)
N / A for Pkg Type
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
OTHER QUALIFIED VERSIONS OF ADS6142-HT :
• Catalog: ADS6142
NOTE: Qualified Version Definitions:
• Catalog - TI's standard catalog product
Addendum-Page 1
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