LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • LDTC143ELT1G Applications Inverter, Interface, Driver 3 • Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3) Only the on/off conditions need to be set for operation, making the device design easy. • 1 2 SOT–23 We declare that the material of product compliance with RoHS requirements. 1 BASE zAbsolute maximum ratings (Ta=25°C) Symbol Limits Unit Supply voltage VCC 50 V Input voltage VIN −10 to +10 V Output current IC 100 mA Power dissipation PD 200 mW Junction temperature Tj 150 C Storage temperature Tstg Parameter −55 to +150 R1 3 COLLECTOR R2 2 EMITTER C DEVICE MARKING AND RESISTOR VALUES Device Marking R1 (K) R2 (K) Shipping LDTB113ELT1G N2 4.7 4.7 3000/Tape & Reel LDTB113ELT3G N2 4.7 4.7 10000/Tape & Reel zElectrical characteristics (Ta=25°C) Parameter Symbol Input voltage Output voltage Min. Typ. Max. Unit Conditions VI(off) − − 0.5 V VI(on) 3 − − V VO=0.3V, IO=20mA VO(on) − 0.1 0.3 V IO/II=10mA/0.5mA VCC=5V, IO=100µA II − − 1.8 mA VI=5V IO(off) − − 0.5 µA VCC=50V, VI=0V GI 30 − − − VO=5V, IO=10mA Input resistance R1 3.29 4.7 6.11 kΩ − Resistance ratio R2/R1 0.8 1 1.2 − − − 250 − MHz Input current Output current DC current gain Transition frequency fT ∗ VCE=10V, IE= −5mA, f=100MHz ∗ Characteristics of built-in transistor 1/3 LESHAN RADIO COMPANY, LTD. LDTC143ELT1G zElectrical characteristic curves 100 10m 5m VO=0.3V OUTPUT CURRENT : Io (A) INPUT VOLTAGE : VI(on) (V) 50 20 10 5 2 Ta= −40°C 25°C 100°C 1 500m 200m 100m 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m 2m 1m 500µ VCC=5V Ta=100°C 25°C −40°C 200µ 100µ 50µ 20µ 10µ 5µ 2µ 1µ 0 0.5 OUTPUT CURRENT : IO (A) 2.5 1 VO=5V 3.0 lO/lI=20 500m OUTPUT VOLTAGE : VO(on) (V) DC CURRENT GAIN : GI 100 2.0 Fig.2 Output current vs. input voltage (OFF characteristics) 500 200 1.5 INPUT VOLTAGE : VI(off) (V) Fig.1 Input voltage vs. output current (ON characteristics) 1k 1.0 Ta=100°C 25°C −40°C 50 20 10 5 2 Ta=100°C 25°C −40°C 200m 100m 50m 20m 10m 5m 2m 1 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) Fig.3 DC current gain vs. output current 1m 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) Fig.4 Output voltage vs. output current 2/3 LESHAN RADIO COMPANY, LTD. LDTC143ELT1G SOT-23 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,1982 2. CONTROLLING DIMENSION: INCH. A L 3 1 V 2 A B C D G H J G C D MIN 0.1102 0.0472 0.0350 0.0150 0.0701 0.0005 INCHES MAX 0.1197 0.0551 0.0440 0.0200 0.0807 0.0040 0.0034 0.0140 0.0350 0.0830 0.0177 0.0070 0.0285 0.0401 0.1039 0.0236 DIM B S H K J K L S V MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.35 0.89 2.10 0.45 0.177 0.69 1.02 2.64 0.60 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm 3/3