LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • LDTC143XET1G Applications Inverter, Interface, Driver • 3 Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3) Only the on/off conditions need to be set for operation, making the device design easy. • 1 2 SC-89 We declare that the material of product compliance with RoHS requirements. 1 BASE zAbsolute maximum ratings (Ta=25°C) Symbol Limits Unit Supply voltage VCC 50 V Input voltage VIN − 7 to +20 V Output current IC 100 mA Power dissipation PD 200 mW Junction temperature Tj 150 C Storage temperature Tstg Parameter −55 to +150 R1 3 COLLECTOR R2 2 EMITTER C DEVICE MARKING AND RESISTOR VALUES Device Marking R1 (K) R2 (K) Shipping LDTC143XET1G M1 4.7 10 3000/Tape & Reel LDTC143XET3G M1 4.7 10 10000/Tape & Reel zElectrical characteristics (Ta=25°C) Parameter Input voltage Output voltage Symbol Min. Typ. Max. VI(off) − − 0.3 VI(on) 2.5 − − VO(on) − 0.1 0.3 V II − − 1.8 mA VI=5V IO(off) − − 0.5 µA VCC=50V, VI=0V VO=5V, IO=10mA Input current Output current Unit V DC current gain GI 30 − − − Input resistance R1 3.29 4.7 6.11 kΩ Resistance ratio R2/R1 1.7 2.1 2.6 − − 250 − MHz Transition frequency fT ∗ Conditions VCC=5V, IO=100µA VO=0.3V, IO=20mA IO/II=10mA/0.5mA − − VCE=10V, IE=−5mA, f=100MHz ∗ Characteristics of built-in transistor 1/3 LESHAN RADIO COMPANY, LTD. LDTC143XET1G zElectrical characteristic curves 100 10m 5m VO=0.3V OUTPUT CURRENT : Io (A) INPUT VOLTAGE : VI(on) (V) 50 20 10 Ta=−40°C 25°C 100°C 5 2 1 500m 200m 100m 100µ 200µ 500µ 1m 2m 5m 10m 20m VCC=5V 2m 1m 500µ Ta=100°C 25°C −40°C 200µ 100µ 50µ 20µ 10µ 5µ 2µ 1µ 0 50m 100m 0.5 OUTPUT CURRENT : IO (A) 1 100 2.5 3.0 50 20 10 5 lO/lI=20 500m OUTPUT VOLTAGE : VO(on) (V) DC CURRENT GAIN : GI Ta=100°C 25°C −40°C 200 2.0 Fig.2 Output current vs. input voltage (OFF characteristics) VO=5V 500 1.5 INPUT VOLTAGE : VI(off) (V) Fig.1 Input voltage vs. output current (ON characteristics) 1k 1.0 Ta=100°C 25°C −40°C 200m 100m 50m 20m 10m 5m 2m 2 1 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m 1m 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) OUTPUT CURRENT : IO (A) Fig.3 DC current gain vs. output current Fig.4 Output voltage vs. output current 2/3 LESHAN RADIO COMPANY, LTD. LDTC143XET1G SC-89 NOTES: 1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2.CONTROLLING DIMENSION: MILLIMETERS 3.MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4.463C-01 OBSOLETE, NEW STANDARD 463C-02. 3/3