Bias Resistor Transistor LDTC143XET1G

LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
•
LDTC143XET1G
Applications
Inverter, Interface, Driver
•
3
Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation,
making the device design easy.
•
1
2
SC-89
We declare that the material of product compliance with
RoHS requirements.
1
BASE
zAbsolute maximum ratings (Ta=25°C)
Symbol
Limits
Unit
Supply voltage
VCC
50
V
Input voltage
VIN
− 7 to +20
V
Output current
IC
100
mA
Power dissipation
PD
200
mW
Junction temperature
Tj
150
C
Storage temperature
Tstg
Parameter
−55 to +150
R1
3
COLLECTOR
R2
2
EMITTER
C
DEVICE MARKING AND RESISTOR VALUES
Device
Marking
R1 (K)
R2 (K)
Shipping
LDTC143XET1G
M1
4.7
10
3000/Tape & Reel
LDTC143XET3G
M1
4.7
10
10000/Tape & Reel
zElectrical characteristics (Ta=25°C)
Parameter
Input voltage
Output voltage
Symbol
Min.
Typ.
Max.
VI(off)
−
−
0.3
VI(on)
2.5
−
−
VO(on)
−
0.1
0.3
V
II
−
−
1.8
mA
VI=5V
IO(off)
−
−
0.5
µA
VCC=50V, VI=0V
VO=5V, IO=10mA
Input current
Output current
Unit
V
DC current gain
GI
30
−
−
−
Input resistance
R1
3.29
4.7
6.11
kΩ
Resistance ratio
R2/R1
1.7
2.1
2.6
−
−
250
−
MHz
Transition frequency
fT ∗
Conditions
VCC=5V, IO=100µA
VO=0.3V, IO=20mA
IO/II=10mA/0.5mA
−
−
VCE=10V, IE=−5mA, f=100MHz
∗ Characteristics of built-in transistor
1/3
LESHAN RADIO COMPANY, LTD.
LDTC143XET1G
zElectrical characteristic curves
100
10m
5m
VO=0.3V
OUTPUT CURRENT : Io (A)
INPUT VOLTAGE : VI(on) (V)
50
20
10
Ta=−40°C
25°C
100°C
5
2
1
500m
200m
100m
100µ 200µ
500µ 1m
2m
5m 10m 20m
VCC=5V
2m
1m
500µ
Ta=100°C
25°C
−40°C
200µ
100µ
50µ
20µ
10µ
5µ
2µ
1µ
0
50m 100m
0.5
OUTPUT CURRENT : IO (A)
1
100
2.5
3.0
50
20
10
5
lO/lI=20
500m
OUTPUT VOLTAGE : VO(on) (V)
DC CURRENT GAIN : GI
Ta=100°C
25°C
−40°C
200
2.0
Fig.2 Output current vs. input voltage
(OFF characteristics)
VO=5V
500
1.5
INPUT VOLTAGE : VI(off) (V)
Fig.1 Input voltage vs. output current
(ON characteristics)
1k
1.0
Ta=100°C
25°C
−40°C
200m
100m
50m
20m
10m
5m
2m
2
1
100µ 200µ
500µ 1m
2m
5m 10m 20m
50m 100m
1m
100µ 200µ
500µ 1m
2m
5m 10m 20m
50m 100m
OUTPUT CURRENT : IO (A)
OUTPUT CURRENT : IO (A)
Fig.3 DC current gain vs. output
current
Fig.4 Output voltage vs. output
current
2/3
LESHAN RADIO COMPANY, LTD.
LDTC143XET1G
SC-89
NOTES:
1.DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2.CONTROLLING DIMENSION: MILLIMETERS
3.MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
4.463C-01 OBSOLETE, NEW STANDARD 463C-02.
3/3