VSF741C1 Visible Light Emitting Diode ① Anode ② Cathode Dimensions (Unit:mm) ･High-output Power ･Compact ･High Reliability APPLICATIONS ･Optical Switches ･Optical Sensors ･Medical Application FEATURES SPECTRAL OUTPUT 120 To purchase this part contact Marktech Optoelectronics at 800.984.5337 100 UNIT mA A V mW ℃ ℃ ℃ ℃ RELATIVE POWER OUTPUT(%) 1. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) ITEM SYMBOL RATINGS Forward Current (DC) 50 IF Forward Current (Pulse)*1 0.5 IFP Reverse Voltage 5 VR Power Dissipation 120 PD Topr Operating Temp. -20 TO 85 Tstg Storage Temp. -30 TO 100 Junction Temp. 100 Tj Lead Soldering Temp.*2 260 Tls *1:Tw=10uS,T=10mS *2:Time 5 Sec max,Position:Up to 3mm from the body 80 60 40 20 0 690 Marktech Optoelectronics www.marktechopto.com 740 WAVELENGTH(nm) 790 VSF741C1 Visible Light Emitting Diode 2.ELECTRICAL & OPTICAL CHARACTERISTICS (Ta=25℃) ITEM CONDITIONS SYMBOL Power Output IF=20mA PO Forward Voltage IF=20mA VF Reverse Current VR=5V IR Peak Wavelength λp IF=20mA Spectral Line Half Width Δλ IF=20mA Half Intensity Beam Angle IF=20mA θ Rise Time IFP=20mA Tr Fall Time IFP=20mA Tf Junction Capacitance 1MHz ,V=0V Cj Temp. Coefficient of PO IF=10mA P/T Temp. Coefficient of VF IF=10mA V/T 300 40 30 20 10 0 1 2 100 0 40 50 40 30 20 10 0 30 60 60 40 20 0 -90 60 90 AMBIENT TEMPERATURE(℃) -30 0 30 60 FORWARD VOLTAGE vs TEMPERATURE IF=10mA 3 120 100 80 60 40 20 0 -30 -60 BEAM ANGLE(deg.) FORWARD VOLTAGE(V) RELATIVE POWER OUTPUT(%) FORWARD CURRENT(mA) 30 140 50 0 -30 20 80 POWER OUTPUT vs TEMPERATURE IF=10mA 60 790 10 100 FORWARD CURRENT(mA) FORWARD VOLTAGE(V) THERMAL DERATING CURVE 2.3 100 RADIATION PATTERN 200 3 UNIT mW V μA nm nm deg. nS nS pF %/℃ mV/℃ 120 0 0 MAX 740 30 ±25 − − 35 -0.6 -1.9 RELATIVE POWER OUTPUT(%) RELATIVE POWER OUTPUT(%) FORWARD CURRENT(mA) 50 TYP 4.5 1.8 RELATIVE POWER vs FORWARD CURRENT FORWARD I-V CHARACTERISTICS 60 MIN 0 30 60 90 AMBIENT TEMPERATURE(℃) 2.5 2 1.5 1 0.5 0 -30 0 30 60 90 AMBIENT TEMPERATURE(℃) 90