TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)50T(F) TOSHIBA InGaAℓP LED TLRE50T(F),TLRME50T(F),TLSE50T(F),TLOE50T(F),TLYE50T(F), TLPYE50T(F),TLGE50T(F),TLFGE50T(F),TLPGE50T(F) Panel Circuit Indicators Unit: mm Lead(Pb)-free products (lead: Sn-Ag-Cu) • φ3 mm package • InGaAℓP technology • All plastic mold type • Transparent lens • Line-up: 6 colors (red, orange, yellow, pure yellow, green and pure green) • High intensity light emission • Excellent low current light output • Applications: message boards, security devices and dashboard displays Lineup Product Name Color TLRE50T(F) Red TLRME50T(F) Red TLSE50T(F) Red TLOE50T(F) Orange TLYE50T(F) Yellow TLPYE50T(F) Pure Yellow TLGE50T(F) Green TLFGE50T(F) Green TLPGE50T(F) Pure Green Material JEDEC ― JEITA ― TOSHIBA 4-3E1A Weight: 0.14 g InGaAlP For part availability and ordering information please call Toll Free: 800.984.5337 Website: www.marktechopto.com | Email: [email protected] 1 2005-09-13 TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)50T(F) Maximum Ratings (Ta = 25°C) Product Name Forward Current IF (mA) Reverse Voltage VR (V) Power Dissipation PD (mW) TLRE50T(F) 50 4 120 TLRME50T(F) 50 4 120 TLSE50T(F) 50 4 120 TLOE50T(F) 50 4 120 TLYE50T(F) 50 4 120 TLPYE50T(F) 50 4 120 TLGE50T(F) 50 4 120 TLFGE50T(F) 50 4 120 TLPGE50T(F) 50 4 120 Operating Temperature Topr (°C) Storage Temperature Tstg (°C) −40~100 −40~120 Electrical and Optical Characteristics (Ta = 25°C) λd λP ∆λ IF Luminous Intensity IV Min Typ. IF TLRE50T(F) 630 (644) 20 20 850 1800 20 1.9 2.4 20 50 4 TLRME50T(F) 626 (636) 23 20 850 2200 20 1.9 2.4 20 50 4 Product Name Typ. Emission Wavelength Forward Voltage VF Typ. Max IF Reverse Current IR Max VR TLSE50T(F) 613 (623) 20 20 1530 3500 20 1.9 2.4 20 50 4 TLOE50T(F) 605 (612) 20 20 1530 4500 20 2.0 2.4 20 50 4 TLYE50T(F) 587 (590) 17 20 1530 3500 20 2.0 2.4 20 50 4 TLPYE50T(F) 580 (583) 14 20 850 2500 20 2.0 2.4 20 50 4 TLGE50T(F) 571 (574) 17 20 476 1500 20 2.0 2.4 20 50 4 TLFGE50T(F) 565 (568) 15 20 272 1000 20 2.0 2.4 20 50 4 TLPGE50T(F) 558 (562) 14 20 153 600 20 2.1 2.4 20 50 4 mA µA V Unit nm mA mcd mA V Precautions • Please be careful of the following: Soldering temperature: 260°C max, soldering time: 3 s max (soldering portion of lead: up to 2 mm from the body of the device) • If the lead is formed, the lead should be formed up to 5 mm from the body of the device without forming stress to the resin. Soldering should be performed after lead forming. • This visible LED lamp also emits some IR light. If a photodetector is located near the LED lamp, please ensure that it will not be affected by this IR light. 2 2005-09-13 TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)50T(F) TLRE50T(F) IF – VF IV – IF 10000 100 Ta = 25°C (mcd) 30 Luminous intensity IV Forward current IF (mA) Ta = 25°C 50 10 5 3 1 1.6 1.7 1.8 1.9 2.0 2.1 Forward voltage VF 2.2 1000 100 10 1 2.3 10 (V) Forward current IV – Tc 100 IF (mA) Relative luminous intensity – Wavelength 3 1.0 Relative luminous intensity Ta = 25°C 1 0.5 0.3 0.1 −20 0 20 60 40 Case temperature Tc 0.8 0.6 0.4 0.2 0 580 80 600 620 640 Wavelength λ (°C) Radiation pattern 660 680 700 100 120 (nm) IF – Ta 80 20° 10° 0° 10° 30° 20° 30° 40° 40° 50° 50° 60° 60° 70° 70° 80° 80° 90° (mA) Ta = 25°C Allowable forward current IF Relative luminous intensity IV IF = 20 mA 0 0.2 0.4 0.6 0.8 90° 1.0 60 40 20 0 0 20 40 60 Ambient temperature 3 80 Ta (°C) 2005-09-13 TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)50T(F) TLRME50T(F) IF – VF IV – IF 10000 100 Ta = 25°C (mcd) 30 Luminous intensity IV Forward current IF (mA) Ta = 25°C 50 10 5 3 1 1.6 1.7 1.8 1.9 2.0 2.1 Forward voltage VF 2.2 1000 100 10 1 2.3 10 (V) Forward current IV – Tc 100 IF (mA) Relative luminous intensity – Wavelength 10 1.0 Ta = 25°C Relative luminous intensity 3 1 0.5 0.3 0.1 −20 0 20 60 40 Case temperature Tc 0.8 0.6 0.4 0.2 0 580 80 600 620 640 Wavelength λ (°C) Radiation pattern 660 680 700 100 120 (nm) IF – Ta 80 20° 10° 0° 10° 30° 20° 30° 40° 40° 50° 50° 60° 60° 70° 70° 80° 80° 90° (mA) Ta = 25°C Allowable forward current IF Relative luminous intensity IV IF = 20 mA 5 0 0.2 0.4 0.6 0.8 90° 1.0 60 40 20 0 0 20 40 60 Ambient temperature 4 80 Ta (°C) 2005-09-13 TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)50T(F) TLSE50T(F) IF – VF IV – IF 10000 100 Ta = 25°C (mcd) 30 Luminous intensity IV Forward current IF (mA) Ta = 25°C 50 10 5 3 1 1.6 1.7 1.8 1.9 2.0 2.1 Forward voltage VF 2.2 1000 100 10 1 2.3 10 (V) Forward current IV – Tc 100 IF (mA) Relative luminous intensity – Wavelength 3 1.0 Relative luminous intensity Ta = 25°C 1 0.5 0.3 0.1 −20 0 20 60 40 Case temperature Tc 0.8 0.6 0.4 0.2 0 560 80 580 600 620 Wavelength λ (°C) Radiation pattern 640 660 680 100 120 (nm) IF – Ta 80 20° 10° 0° 10° 30° 20° 30° 40° 40° 50° 50° 60° 60° 70° 70° 80° 80° 90° (mA) Ta = 25°C Allowable forward current IF Relative luminous intensity IV IF = 20 mA 0 0.2 0.4 0.6 0.8 90° 1.0 60 40 20 0 0 20 40 60 Ambient temperature 5 80 Ta (°C) 2005-09-13 TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)50T(F) TLOE50T(F) IF – VF IV – IF 30000 100 10 5 3 1 1.6 1.7 1.8 1.9 2.0 2.1 Forward voltage VF 2.2 (mcd) 30 Ta = 25°C 10000 Luminous intensity IV Forward current IF (mA) Ta = 25°C 50 1000 100 1 2.3 10 (V) Forward current IV – Tc 100 IF (mA) Relative luminous intensity – Wavelength 3 1.0 Relative luminous intensity Ta = 25°C 1 0.5 0.3 0.1 −20 0 20 60 40 Case temperature Tc 0.8 0.6 0.4 0.2 0 540 80 560 580 600 Wavelength λ (°C) Radiation pattern 620 640 660 100 120 (nm) IF – Ta 80 20° 10° 0° 10° 30° 20° 30° 40° 40° 50° 50° 60° 60° 70° 70° 80° 80° 90° (mA) Ta = 25°C Allowable forward current IF Relative luminous intensity IV IF = 20 mA 0 0.2 0.4 0.6 0.8 90° 1.0 60 40 20 0 0 20 40 60 Ambient temperature 6 80 Ta (°C) 2005-09-13 TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)50T(F) TLYE50T(F) IF – VF IV – IF 10000 100 Ta = 25°C (mcd) 30 Luminous intensity IV Forward current IF (mA) Ta = 25°C 50 10 5 3 1 1.6 1.7 1.8 1.9 2.0 2.1 Forward voltage VF 2.2 1000 100 10 1 2.3 10 (V) Forward current IV – Tc 100 IF (mA) Relative luminous intensity – Wavelength 3 1.0 Relative luminous intensity Ta = 25°C 1 0.5 0.3 0.1 −20 0 20 60 40 Case temperature Tc 0.8 0.6 0.4 0.2 0 540 80 560 580 600 Wavelength λ (°C) Radiation pattern 620 640 660 100 120 (nm) IF – Ta 80 20° 10° 0° 10° 30° 20° 30° 40° 40° 50° 50° 60° 60° 70° 70° 80° 80° 90° (mA) Ta = 25°C Allowable forward current IF Relative luminous intensity IV IF = 20 mA 0 0.2 0.4 0.6 0.8 90° 1.0 60 40 20 0 0 20 40 60 Ambient temperature 7 80 Ta (°C) 2005-09-13 TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)50T(F) TLPYE50T(F) IF – VF IV – IF 10000 100 Ta = 25°C (mcd) 30 Luminous intensity IV Forward current IF (mA) Ta = 25°C 50 10 5 3 1 1.6 1.7 1.8 1.9 2.0 2.1 Forward voltage VF 2.2 1000 100 20 1 2.3 (V) Forward current IV – Tc 100 IF (mA) Relative luminous intensity – Wavelength 10 1.0 IF = 20 mA Ta = 25°C Relative luminous intensity 5 3 1 0.5 0.3 0.1 −20 20 0 40 Case temperature Tc 60 0.8 0.6 0.4 0.2 0 540 80 560 580 600 Wavelength λ (°C) Radiation pattern 620 640 660 100 120 (nm) IF – Ta 80 20° 10° 0° 10° 30° 20° 30° 40° 40° 50° 50° 60° 60° 70° 70° 80° 80° 90° (mA) Ta = 25°C Allowable forward current IF Relative luminous intensity IV 10 0 0.2 0.4 0.6 0.8 90° 1.0 60 40 20 0 0 20 40 60 Ambient temperature 8 80 Ta (°C) 2005-09-13 TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)50T(F) TLGE50T(F) IF – VF IV – IF 5000 100 Ta = 25°C (mcd) 30 Luminous intensity IV Forward current IF (mA) Ta = 25°C 50 10 5 3 1 1.6 1.7 1.8 1.9 2.0 2.1 Forward voltage VF 2.2 1000 100 10 1 2.3 10 (V) Forward current IV – Tc 100 IF (mA) Relative luminous intensity – Wavelength 1.0 10 Ta = 25°C Relative luminous intensity 3 1 0.5 0.3 0.1 −20 0 20 Case temperature Tc 0.8 0.6 0.4 0.2 0 520 80 60 40 540 560 580 Wavelength λ (°C) Radiation pattern 600 620 640 100 120 (nm) IF – Ta 80 20° 10° 0° 10° 30° 20° 30° 40° 40° 50° 50° 60° 60° 70° 70° 80° 80° 90° (mA) Ta = 25°C Allowable forward current IF Relative luminous intensity IV IF = 20 mA 5 0 0.2 0.4 0.6 0.8 90° 1.0 60 40 20 0 0 20 40 60 Ambient temperature 9 80 Ta (°C) 2005-09-13 TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)50T(F) TLFGE50T(F) IF – VF IV – IF 5000 100 Ta = 25°C (mcd) 30 Luminous intensity IV Forward current IF (mA) Ta = 25°C 50 10 5 3 1 1.6 1.7 1.8 1.9 2.0 2.1 Forward voltage VF 2.2 1000 100 10 1 2.3 (V) Forward current IV – Tc 100 IF (mA) Relative luminous intensity – Wavelength 1.0 10 IF = 20 mA Ta = 25°C Relative luminous intensity 5 3 1 0.5 0.3 0.1 −20 20 0 40 Case temperature Tc 60 0.8 0.6 0.4 0.2 0 520 80 540 560 580 Wavelength λ (°C) Radiation pattern 600 620 640 100 120 (nm) IF – Ta 80 20° 10° 0° 10° 30° 20° 30° 40° 40° 50° 50° 60° 60° 70° 70° 80° 80° 90° (mA) Ta = 25°C Allowable forward current IF Relative luminous intensity IV 10 0 0.2 0.4 0.6 0.8 90° 1.0 60 40 20 0 0 20 40 60 Ambient temperature 10 80 Ta (°C) 2005-09-13 TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)50T(F) TLPGE50T(F) IF – VF IV – IF 10000 100 Ta = 25°C (mcd) 30 Luminous intensity IV Forward current IF (mA) Ta = 25°C 50 10 5 3 1 1.6 1.7 1.8 1.9 2.0 2.1 Forward voltage VF 2.2 1000 100 10 1 2.3 10 (V) Forward current IV – Tc 100 IF (mA) Relative luminous intensity – Wavelength 10 1.0 Ta = 25°C Relative luminous intensity 3 1 0.5 0.3 0.1 −20 0 20 60 40 Case temperature Tc 0.8 0.6 0.4 0.2 0 520 80 540 560 580 Wavelength λ (°C) Radiation pattern 600 620 640 100 120 (nm) IF – Ta 80 20° 10° 0° 10° 30° 20° 30° 40° 40° 50° 50° 60° 60° 70° 70° 80° 80° 90° (mA) Ta = 25°C Allowable forward current IF Relative luminous intensity IV IF = 20 mA 5 0 0.2 0.4 0.6 0.8 90° 1.0 60 40 20 0 0 20 40 60 Ambient temperature 11 80 Ta (°C) 2005-09-13 TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)50T(F) 12 2005-09-13