MARKTECH TLPYE50T

TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)50T(F)
TOSHIBA InGaAℓP LED
TLRE50T(F),TLRME50T(F),TLSE50T(F),TLOE50T(F),TLYE50T(F),
TLPYE50T(F),TLGE50T(F),TLFGE50T(F),TLPGE50T(F)
Panel Circuit Indicators
Unit: mm
Lead(Pb)-free products (lead: Sn-Ag-Cu)
• φ3 mm package
•
InGaAℓP technology
•
All plastic mold type
•
Transparent lens
•
Line-up: 6 colors (red, orange, yellow, pure yellow, green and pure
green)
•
High intensity light emission
•
Excellent low current light output
•
Applications: message boards, security devices and dashboard
displays
Lineup
Product Name
Color
TLRE50T(F)
Red
TLRME50T(F)
Red
TLSE50T(F)
Red
TLOE50T(F)
Orange
TLYE50T(F)
Yellow
TLPYE50T(F)
Pure Yellow
TLGE50T(F)
Green
TLFGE50T(F)
Green
TLPGE50T(F)
Pure Green
Material
JEDEC
―
JEITA
―
TOSHIBA
4-3E1A
Weight: 0.14 g
InGaAlP
For part availability and ordering information please call Toll Free: 800.984.5337
Website: www.marktechopto.com | Email: [email protected]
1
2005-09-13
TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)50T(F)
Maximum Ratings (Ta = 25°C)
Product Name
Forward Current
IF (mA)
Reverse Voltage
VR (V)
Power Dissipation
PD (mW)
TLRE50T(F)
50
4
120
TLRME50T(F)
50
4
120
TLSE50T(F)
50
4
120
TLOE50T(F)
50
4
120
TLYE50T(F)
50
4
120
TLPYE50T(F)
50
4
120
TLGE50T(F)
50
4
120
TLFGE50T(F)
50
4
120
TLPGE50T(F)
50
4
120
Operating
Temperature
Topr (°C)
Storage
Temperature
Tstg (°C)
−40~100
−40~120
Electrical and Optical Characteristics (Ta = 25°C)
λd
λP
∆λ
IF
Luminous Intensity
IV
Min
Typ.
IF
TLRE50T(F)
630
(644)
20
20
850
1800
20
1.9
2.4
20
50
4
TLRME50T(F)
626
(636)
23
20
850
2200
20
1.9
2.4
20
50
4
Product Name
Typ. Emission Wavelength
Forward Voltage
VF
Typ.
Max
IF
Reverse Current
IR
Max
VR
TLSE50T(F)
613
(623)
20
20
1530
3500
20
1.9
2.4
20
50
4
TLOE50T(F)
605
(612)
20
20
1530
4500
20
2.0
2.4
20
50
4
TLYE50T(F)
587
(590)
17
20
1530
3500
20
2.0
2.4
20
50
4
TLPYE50T(F)
580
(583)
14
20
850
2500
20
2.0
2.4
20
50
4
TLGE50T(F)
571
(574)
17
20
476
1500
20
2.0
2.4
20
50
4
TLFGE50T(F)
565
(568)
15
20
272
1000
20
2.0
2.4
20
50
4
TLPGE50T(F)
558
(562)
14
20
153
600
20
2.1
2.4
20
50
4
mA
µA
V
Unit
nm
mA
mcd
mA
V
Precautions
•
Please be careful of the following:
Soldering temperature: 260°C max, soldering time: 3 s max
(soldering portion of lead: up to 2 mm from the body of the device)
•
If the lead is formed, the lead should be formed up to 5 mm from the body of the device without forming stress to
the resin. Soldering should be performed after lead forming.
•
This visible LED lamp also emits some IR light.
If a photodetector is located near the LED lamp, please ensure that it will not be affected by this IR light.
2
2005-09-13
TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)50T(F)
TLRE50T(F)
IF – VF
IV – IF
10000
100
Ta = 25°C
(mcd)
30
Luminous intensity IV
Forward current
IF (mA)
Ta = 25°C
50
10
5
3
1
1.6
1.7
1.8
1.9
2.0
2.1
Forward voltage VF
2.2
1000
100
10
1
2.3
10
(V)
Forward current
IV – Tc
100
IF (mA)
Relative luminous intensity – Wavelength
3
1.0
Relative luminous intensity
Ta = 25°C
1
0.5
0.3
0.1
−20
0
20
60
40
Case temperature
Tc
0.8
0.6
0.4
0.2
0
580
80
600
620
640
Wavelength λ
(°C)
Radiation pattern
660
680
700
100
120
(nm)
IF – Ta
80
20°
10°
0°
10°
30°
20°
30°
40°
40°
50°
50°
60°
60°
70°
70°
80°
80°
90°
(mA)
Ta = 25°C
Allowable forward current IF
Relative luminous intensity IV
IF = 20 mA
0
0.2
0.4
0.6
0.8
90°
1.0
60
40
20
0
0
20
40
60
Ambient temperature
3
80
Ta
(°C)
2005-09-13
TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)50T(F)
TLRME50T(F)
IF – VF
IV – IF
10000
100
Ta = 25°C
(mcd)
30
Luminous intensity IV
Forward current
IF (mA)
Ta = 25°C
50
10
5
3
1
1.6
1.7
1.8
1.9
2.0
2.1
Forward voltage VF
2.2
1000
100
10
1
2.3
10
(V)
Forward current
IV – Tc
100
IF (mA)
Relative luminous intensity – Wavelength
10
1.0
Ta = 25°C
Relative luminous intensity
3
1
0.5
0.3
0.1
−20
0
20
60
40
Case temperature
Tc
0.8
0.6
0.4
0.2
0
580
80
600
620
640
Wavelength λ
(°C)
Radiation pattern
660
680
700
100
120
(nm)
IF – Ta
80
20°
10°
0°
10°
30°
20°
30°
40°
40°
50°
50°
60°
60°
70°
70°
80°
80°
90°
(mA)
Ta = 25°C
Allowable forward current IF
Relative luminous intensity IV
IF = 20 mA
5
0
0.2
0.4
0.6
0.8
90°
1.0
60
40
20
0
0
20
40
60
Ambient temperature
4
80
Ta
(°C)
2005-09-13
TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)50T(F)
TLSE50T(F)
IF – VF
IV – IF
10000
100
Ta = 25°C
(mcd)
30
Luminous intensity IV
Forward current
IF (mA)
Ta = 25°C
50
10
5
3
1
1.6
1.7
1.8
1.9
2.0
2.1
Forward voltage VF
2.2
1000
100
10
1
2.3
10
(V)
Forward current
IV – Tc
100
IF (mA)
Relative luminous intensity – Wavelength
3
1.0
Relative luminous intensity
Ta = 25°C
1
0.5
0.3
0.1
−20
0
20
60
40
Case temperature
Tc
0.8
0.6
0.4
0.2
0
560
80
580
600
620
Wavelength λ
(°C)
Radiation pattern
640
660
680
100
120
(nm)
IF – Ta
80
20°
10°
0°
10°
30°
20°
30°
40°
40°
50°
50°
60°
60°
70°
70°
80°
80°
90°
(mA)
Ta = 25°C
Allowable forward current IF
Relative luminous intensity IV
IF = 20 mA
0
0.2
0.4
0.6
0.8
90°
1.0
60
40
20
0
0
20
40
60
Ambient temperature
5
80
Ta
(°C)
2005-09-13
TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)50T(F)
TLOE50T(F)
IF – VF
IV – IF
30000
100
10
5
3
1
1.6
1.7
1.8
1.9
2.0
2.1
Forward voltage VF
2.2
(mcd)
30
Ta = 25°C
10000
Luminous intensity IV
Forward current
IF (mA)
Ta = 25°C
50
1000
100
1
2.3
10
(V)
Forward current
IV – Tc
100
IF (mA)
Relative luminous intensity – Wavelength
3
1.0
Relative luminous intensity
Ta = 25°C
1
0.5
0.3
0.1
−20
0
20
60
40
Case temperature
Tc
0.8
0.6
0.4
0.2
0
540
80
560
580
600
Wavelength λ
(°C)
Radiation pattern
620
640
660
100
120
(nm)
IF – Ta
80
20°
10°
0°
10°
30°
20°
30°
40°
40°
50°
50°
60°
60°
70°
70°
80°
80°
90°
(mA)
Ta = 25°C
Allowable forward current IF
Relative luminous intensity IV
IF = 20 mA
0
0.2
0.4
0.6
0.8
90°
1.0
60
40
20
0
0
20
40
60
Ambient temperature
6
80
Ta
(°C)
2005-09-13
TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)50T(F)
TLYE50T(F)
IF – VF
IV – IF
10000
100
Ta = 25°C
(mcd)
30
Luminous intensity IV
Forward current
IF (mA)
Ta = 25°C
50
10
5
3
1
1.6
1.7
1.8
1.9
2.0
2.1
Forward voltage VF
2.2
1000
100
10
1
2.3
10
(V)
Forward current
IV – Tc
100
IF (mA)
Relative luminous intensity – Wavelength
3
1.0
Relative luminous intensity
Ta = 25°C
1
0.5
0.3
0.1
−20
0
20
60
40
Case temperature
Tc
0.8
0.6
0.4
0.2
0
540
80
560
580
600
Wavelength λ
(°C)
Radiation pattern
620
640
660
100
120
(nm)
IF – Ta
80
20°
10°
0°
10°
30°
20°
30°
40°
40°
50°
50°
60°
60°
70°
70°
80°
80°
90°
(mA)
Ta = 25°C
Allowable forward current IF
Relative luminous intensity IV
IF = 20 mA
0
0.2
0.4
0.6
0.8
90°
1.0
60
40
20
0
0
20
40
60
Ambient temperature
7
80
Ta
(°C)
2005-09-13
TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)50T(F)
TLPYE50T(F)
IF – VF
IV – IF
10000
100
Ta = 25°C
(mcd)
30
Luminous intensity IV
Forward current
IF (mA)
Ta = 25°C
50
10
5
3
1
1.6
1.7
1.8
1.9
2.0
2.1
Forward voltage VF
2.2
1000
100
20
1
2.3
(V)
Forward current
IV – Tc
100
IF (mA)
Relative luminous intensity – Wavelength
10
1.0
IF = 20 mA
Ta = 25°C
Relative luminous intensity
5
3
1
0.5
0.3
0.1
−20
20
0
40
Case temperature
Tc
60
0.8
0.6
0.4
0.2
0
540
80
560
580
600
Wavelength λ
(°C)
Radiation pattern
620
640
660
100
120
(nm)
IF – Ta
80
20°
10°
0°
10°
30°
20°
30°
40°
40°
50°
50°
60°
60°
70°
70°
80°
80°
90°
(mA)
Ta = 25°C
Allowable forward current IF
Relative luminous intensity IV
10
0
0.2
0.4
0.6
0.8
90°
1.0
60
40
20
0
0
20
40
60
Ambient temperature
8
80
Ta
(°C)
2005-09-13
TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)50T(F)
TLGE50T(F)
IF – VF
IV – IF
5000
100
Ta = 25°C
(mcd)
30
Luminous intensity IV
Forward current
IF (mA)
Ta = 25°C
50
10
5
3
1
1.6
1.7
1.8
1.9
2.0
2.1
Forward voltage VF
2.2
1000
100
10
1
2.3
10
(V)
Forward current
IV – Tc
100
IF (mA)
Relative luminous intensity – Wavelength
1.0
10
Ta = 25°C
Relative luminous intensity
3
1
0.5
0.3
0.1
−20
0
20
Case temperature
Tc
0.8
0.6
0.4
0.2
0
520
80
60
40
540
560
580
Wavelength λ
(°C)
Radiation pattern
600
620
640
100
120
(nm)
IF – Ta
80
20°
10°
0°
10°
30°
20°
30°
40°
40°
50°
50°
60°
60°
70°
70°
80°
80°
90°
(mA)
Ta = 25°C
Allowable forward current IF
Relative luminous intensity IV
IF = 20 mA
5
0
0.2
0.4
0.6
0.8
90°
1.0
60
40
20
0
0
20
40
60
Ambient temperature
9
80
Ta
(°C)
2005-09-13
TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)50T(F)
TLFGE50T(F)
IF – VF
IV – IF
5000
100
Ta = 25°C
(mcd)
30
Luminous intensity IV
Forward current
IF (mA)
Ta = 25°C
50
10
5
3
1
1.6
1.7
1.8
1.9
2.0
2.1
Forward voltage VF
2.2
1000
100
10
1
2.3
(V)
Forward current
IV – Tc
100
IF (mA)
Relative luminous intensity – Wavelength
1.0
10
IF = 20 mA
Ta = 25°C
Relative luminous intensity
5
3
1
0.5
0.3
0.1
−20
20
0
40
Case temperature
Tc
60
0.8
0.6
0.4
0.2
0
520
80
540
560
580
Wavelength λ
(°C)
Radiation pattern
600
620
640
100
120
(nm)
IF – Ta
80
20°
10°
0°
10°
30°
20°
30°
40°
40°
50°
50°
60°
60°
70°
70°
80°
80°
90°
(mA)
Ta = 25°C
Allowable forward current IF
Relative luminous intensity IV
10
0
0.2
0.4
0.6
0.8
90°
1.0
60
40
20
0
0
20
40
60
Ambient temperature
10
80
Ta
(°C)
2005-09-13
TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)50T(F)
TLPGE50T(F)
IF – VF
IV – IF
10000
100
Ta = 25°C
(mcd)
30
Luminous intensity IV
Forward current
IF (mA)
Ta = 25°C
50
10
5
3
1
1.6
1.7
1.8
1.9
2.0
2.1
Forward voltage VF
2.2
1000
100
10
1
2.3
10
(V)
Forward current
IV – Tc
100
IF (mA)
Relative luminous intensity – Wavelength
10
1.0
Ta = 25°C
Relative luminous intensity
3
1
0.5
0.3
0.1
−20
0
20
60
40
Case temperature
Tc
0.8
0.6
0.4
0.2
0
520
80
540
560
580
Wavelength λ
(°C)
Radiation pattern
600
620
640
100
120
(nm)
IF – Ta
80
20°
10°
0°
10°
30°
20°
30°
40°
40°
50°
50°
60°
60°
70°
70°
80°
80°
90°
(mA)
Ta = 25°C
Allowable forward current IF
Relative luminous intensity IV
IF = 20 mA
5
0
0.2
0.4
0.6
0.8
90°
1.0
60
40
20
0
0
20
40
60
Ambient temperature
11
80
Ta
(°C)
2005-09-13
TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)50T(F)
12
2005-09-13