TLRH50T(F),TLSH50T(F),TLOH50T(F),TLYH50T(F) Preliminary TLRH50T(F),TLSH50T(F),TLOH50T(F),TLYH50T(F) ・This material is technological examination material to aim at the product introduction. The change in the content of the characteristic might be accompanied at the final specification process. The final specification will be able to be gotten in the brokerage department when the product is designed and to get the confirmation. For part availability and ordering information please call Toll Free: 800.984.5337 Website: www.marktechopto.com | Email: [email protected] 1 2006-12-5 TLRH50T(F),TLSH50T(F),TLOH50T(F),TLYH50T(F) TOSHIBA InGaAℓP LED Preliminary TLRH50T(F),TLSH50T(F),TLOH50T(F),TLYH50T(F) Panel Circuit Indicators Unit: mm • • Lead(Pb)-free products (lead: Sn-Ag-Cu) 3 mm package • InGaAℓP technology • All plastic mold type • Transparent lens • Line-up: 3 colors (red, orange, yellow) • High intensity light emission • Excellent low current light output Lineup Product Name TLRH50T(F) TLSH50T(F) Color Material Red TLOH50T(F) Orange TLYH50T(F) Yellow InGaAlP JEDEC ― JEITA ― TOSHIBA 4-3E1A Weight: 0.14 g 2 2006-12-5 TLRH50T(F),TLSH50T(F),TLOH50T(F),TLYH50T(F) Preliminary Maximum Ratings (Ta = 25°C) Product Name Forward Current IF (mA) Reverse Voltage VR (V) Power Dissipation PD (mW) Operating Temperature Topr (°C) Storage Temperature Tstg (°C) 50 4 120 −40~100 −40~120 TLRH50T(F) TLSH50T(F) TLOH50T(F) TLYH50T(F) Electrical and Optical Characteristics (Ta = 25°C) λd λP ∆λ IF Luminous Intensity IV Min Typ. IF TLRH50T(F) 630 (644) 13 20 850 2000 20 1.9 2.4 20 50 4 TLSH50T(F) 613 (623) 13 20 2720 4700 20 2.0 2.4 20 50 4 TLOH50T(F) 605 (612) 13 20 1530 5800 20 2.0 2.4 20 50 4 TLYH50T(F) 587 (590) 13 20 1530 4400 20 2.0 2.4 20 50 4 mA µA V Product Name Unit Typ. Emission Wavelength nm mA mcd mA Forward Voltage VF Typ. Max IF V Reverse Current IR Max VR Precautions • Please be careful of the following: Soldering temperature: 260°C max, soldering time: 3 s max (Soldering portion of lead: up to 1.6 mm from the body of the device) • If the lead is formed, the lead should be formed up to 1.6 mm from the body of the device without forming stress to the resin. Soldering should be performed after lead forming. • This visible LED lamp also emits some IR light. If a photodetector is located near the LED lamp, please ensure that it will not be affected by this IR light. 3 2006-12-5 TLRH50T(F),TLSH50T(F),TLOH50T(F),TLYH50T(F) TLRH50T(F) Preliminary IF – V F IV – IF 100 10000 Ta = 25°C (mcd) IV 30 Luminous intensity Forward current IF (mA) Ta = 25°C 50 10 5 3 1 1.6 1.7 1.8 1.9 2.0 Forward voltage 2.1 VF 2.2 1000 100 10 1 2.3 (V) 100 Forward current IV – Tc IF (mA) Relative luminous intensity – Wavelength 1.0 3 IF = 20 mA IV Relative luminous intensity Ta = 25°C 1 0.5 0.3 0.1 −20 0 20 60 40 Case temperature Tc 0.8 0.6 0.4 0.2 0 580 80 600 (°C) 620 640 Wavelength Radiation pattern 660 λ 680 700 (nm) IF – Ta 80 IF (mA) Ta = 25°C 20° 10° 0° 10° 30° 20° 30° 40° 40° 50° 50° 60° 60° 70° 70° 80° 90° Allowable forward current Relative luminous intensity 10 80° 0 0.2 0.4 0.6 0.8 90° 1.0 60 40 20 0 0 20 40 60 Ambient temperature 4 80 Ta 100 120 (°C) 2006-12-5 TLRH50T(F),TLSH50T(F),TLOH50T(F),TLYH50T(F) Preliminary TLSH50T(F) IF – V F IV – IF 100 10000 Ta = 25°C (mcd) 5 3 1 1.6 1.7 1.8 1.9 2.0 Forward voltage 2.1 VF 2.2 IV Forward current 10 1000 Luminous intensity 30 IF (mA) Ta = 25°C 50 100 10 1 2.3 10 (V) Forward current IV – Tc IF (mA) Relative luminous intensity – Wavelength 3 1.0 IF = 20 mA Relative luminous intensity IV 1 0.5 0.3 0.1 −20 0 20 Case temperature Tc Ta = 25°C 0.8 0.6 0.4 0.2 0 560 80 60 40 580 (°C) 600 620 Wavelength Radiation pattern λ 640 660 680 (nm) IF – Ta 80 IF (mA) Ta = 25°C 20° 10° 0° 10° 30° 20° 30° 40° 40° 50° 50° 60° 60° 70° 70° 80° 90° Allowable forward current Relative luminous intensity 100 80° 0 0.2 0.4 0.6 0.8 90° 1.0 60 40 20 0 0 20 40 60 Ambient temperature 5 80 Ta 100 120 (°C) 2006-12-5 TLRH50T(F),TLSH50T(F),TLOH50T(F),TLYH50T(F) TLOH50T(F) Preliminary IF – V F 100 IV – IF Ta = 25°C (mcd) Luminous intensity Forward current Ta = 25°C 10000 IV 30 IF (mA) 50 10 5 3 1 1.6 1.7 1.8 1.9 2.0 Forward voltage 2.1 VF 2.2 1000 100 1 2.3 (V) 100 Forward current IV – Tc IF (mA) Relative luminous intensity – Wavelength 3 1.0 IF = 20 mA Relative luminous intensity IV 1 0.5 0.3 0.1 −20 0 20 Case temperature Tc Ta = 25°C 0.8 0.6 0.4 0.2 0 540 80 60 40 560 (°C) 580 600 Wavelength Radiation pattern 620 λ 640 660 (nm) IF – Ta 80 IF (mA) Ta = 25°C 20° 10° 0° 10° 30° 20° 30° 40° 40° 50° 50° 60° 60° 70° 70° 80° 90° Allowable forward current Relative luminous intensity 10 80° 0 0.2 0.4 0.6 0.8 90° 1.0 60 40 20 0 0 20 40 60 Ambient temperature 6 80 Ta 100 120 (°C) 2006-12-5 TLRH50T(F),TLSH50T(F),TLOH50T(F),TLYH50T(F) Preliminary TLYH50T(F) IF – V F IV – IF 100 10000 Ta = 25°C (mcd) 5 3 1 1.6 1.7 1.8 1.9 2.0 Forward voltage 2.1 VF 2.2 IV Forward current 10 1000 Luminous intensity 30 IF (mA) Ta = 25°C 50 100 10 1 2.3 10 (V) 100 Forward current IV – Tc IF (mA) Relative luminous intensity – Wavelength 3 1.0 Relative luminous intensity Ta = 25°C 1 0.5 0.3 0.1 −20 0 20 Case temperature Tc 0.8 0.6 0.4 0.2 0 540 80 60 40 560 (°C) 580 600 Wavelength Radiation pattern 620 λ 640 660 100 120 (nm) IF – Ta 80 IF (mA) Ta = 25°C 20° 10° 0° 10° 30° 20° 30° 40° 40° 50° 50° 60° 60° 70° 70° 80° 90° Allowable forward current Relative luminous intensity IV IF = 20 mA 80° 0 0.2 0.4 0.6 0.8 90° 1.0 60 40 20 0 0 20 40 60 Ambient temperature 7 80 Ta (°C) 2006-12-5 TLRH50T(F),TLSH50T(F),TLOH50T(F),TLYH50T(F) RESTRICTIONS ON PRODUCT USE 000707EAC • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with domestic garbage. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. • The information contained herein is subject to change without notice. 8 2006-12-5