TECHNICAL DATA LOW POWER PNP SILICON TRANSISTOR Qualified per MIL-PRF-19500/177 Devices Qualified Level 2N1131 2N1131L 2N1132 2N1132L JAN JANTX TO-39* MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +250C(1) @ TC = +250C(2) Operating & Storage Temperature Range 1) Derate linearly 3.4 mW/0C for TA ≥ +250C 2) Derate linearly 11.4 mW/0C for TC ≥ +250C Symbol All Units Units VCEO VCBO VEBO IC 40 50 5.0 600 0.6 2.0 -65 to +200 Vdc Vdc Vdc mAdc W W °C PT Top, Tj 2N1131, 2N1132 TO-5* 2N1311L, 2N1312L *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage V(BR)CEO IC = 10 mAdc Collector-Base Breakdown Voltage V(BR)CBO IC = 10 µAdc Emitter-Base Cutoff Current IEBO VEB = 5.0 Vdc Collector-Emitter Cutoff Current ICER VCE = 50 Vdc, RBE ≤ 10 ohms Collector-Base Cutoff Current VCB = 50 Vdc ICBO VCB = 30 Vdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 Min. Max. 40 50 100 10 10 1.0 Unit Vdc Vdc µAdc mAdc µAdc 120101 Page 1 of 2 2N1131, 2N1132 JAN, JANTX ELECTRICAL CHARACTERISTICS (con’t) Characteristics ON CHARACTERISTICS (3) Forward Current Transfer Ratio IC = 150 mAdc, VCE = 10 Vdc IC = 5.0 mAdc, VCE = 10 Vdc Symbol 2N1131, L 2N1132, L 2N1131, L 2N1132, L Collector-Emitter Saturation Voltage IC = 150 mAdc, IB = 15 mAdc Base-Emitter Saturation Voltage IC = 150 mAdc, IB = 15 mAdc DYNAMIC CHARACTERISTICS Small-Signal Short Circuit Forward-Current Transfer Ratio IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1 kHz 2N1131, L 2N1132, L 2N1131, L IC = 5.0 mAdc, VCE = 10 Vdc, f = 1 kHz 2N1132, L Small-Signal Open-Circuit Output Admittance IC = 1.0 mAdc, VCE = 5.0 Vdc IC = 5.0 mAdc, VCE = 10 Vdc Small-Signal Short-Circuit Input Impedance IC = 1.0 mAdc, VCE = 5.0 Vdc IC = 5.0 mAdc, VCE = 10 Vdc Magnitude of Common Emitter Small-Signal Short Circuit Forward-Current Transfer Ratio IC = 50 mAdc, VCE = 10 Vdc, f = 20 MHz 2N1131, L 2N1132, L Output Capacitance VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz Input Capacitance VEB = 0.5 Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0 MHz SWITCHING CHARACTERISTICS Turn-On Time + Turn-Off Time (See figure 2 of MIL-PRF-19500/177) 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 hFE Min. 20 30 15 25 VCE(sat) 1.5 15 30 20 30 hfe Cobo Cibo t on + toff Vdc Vdc 50 90 1.0 5.0 µmho 25 35 10 Ω 2.5 3.0 20 20 hob hib Unit 45 90 1.3 VBE(sat) hfe Max. 45 80 50 pF pF ηs 120101 Page 2 of 2