TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/525 Devices Qualified Level 2N6546 JAN JANTX JANTXV 2N6547 MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation Symbol VCEO VCEX VEBO IB IC @ TC = +250C (1) @ TC = +1000C (1) Operating & Storage Temperature Range PT Top, Tstg 2N6546 300 600 2N6547 400 850 8 10 15 175 100 -65 to +200 Units Vdc Vdc Vdc Adc Adc W W 0 C TO-3 (TO-204AA)* THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case Symbol Max. 1.0 RθJC 1) Between TC = +250C and TC = +2000C, linear derating factor (average) = 1.0 W/0C Unit C/W 0 *See Appendix A for Package Outline ELECTRICAL CHARACTERISTICS Characteristics Symbol Min. 2N6546 2N6547 V(BR)CEO 300 400 2N6546 2N6547 ICEX Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 100 mAdc Collector-Emitter Cutoff Current VCE = 600 Vdc; VBE = 1.5 Vdc VCE = 850 Vdc; VBE = 1.5 Vdc Emitter-Base Cutoff Current VEB = 8 Vdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 IEBO Vdc 1.0 1.0 1.0 mAdc mAdc 120101 Page 1 of 2 2N6546, 2N6547 JAN SERIES ELECTRICAL CHARACTERISTICS (con’t) Characteristics Symbol Min. Max. hFE 15 12 6 60 Unit ON CHARACTERISTICS (3) Forward-Current Transfer Ratio IC = 1 Adc; VCE = 2 Vdc IC = 5 Adc; VCE = 2 Vdc IC = 10 Adc; VCE = 2 Vdc Base-Emitter Saturated Voltage IB = 2.0 Adc; IC = 10 Adc Collector-Emitter Saturated Voltage IB = 2.0 Adc; IC = 10 Adc IB = 3.0 Adc; IC = 15 Adc VBE(sat) 1.6 VCE(sat) 1.5 5.0 Vdc Vdc DYNAMIC CHARACTERISTICS Magnitude of Common-Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 0.5 Adc, VCE = 10 Vdc, f = 1 MHz Output Capacitance VCB = 10 Vdc, IE = 0, 0.1 MHz ≤ f ≤ 1.0 MHz hfe 6.0 Cobo 30 500 pF SWITCHING CHARACTERISTICS Turn-On Time VCC = 250 Vdc; IC = 10 Adc; IB1 = IB2 = 2 Adc Turn-Off Time VCC = 250 Vdc; IC = 10 Adc; IB1 = IB2 = 2 Adc on 1.0 µs off 4.7 µs t t SAFE OPERATING AREA DC Tests TC = +250C; tp = 1 s; 1 cycle (See Figure 3 of MIL-PRF-19500/525) Test 1 VCE = 11.7 Vdc; IC = 15 Adc Test 2 VCE = 20 Vdc; IC = 8.75 Adc Test 3 VCE = 250 Vdc; IC = 45 mAdc 2N6546 VCE = 350 Vdc; IC = 30 mAdc 2N6547 Unclamped Inductive lOAD TC = +250C; duty cycle ≤ 10%; RS = 0.1 Ω; tr = tf ≤ 500 ηs (See Figure 4 of MIL-PRF-19500/525) Test 1 Tp = 5 ms; (vary to obtain IC); RBB1 = 15 Ω; VBB1 = 38.5 Vdc; RBB2 = 50 Ω; VBB2 = -4 Vdc; VCC = 20 Vdc; IC = 15 Adc; L = 10 µH Test 2 Tp = 5 ms; (vary to obtain IC); RBB1 = 15 Ω; VBB1 = 38.5 Vdc; RBB2 = 50 Ω; VBB2 = -4 Vdc; VCC = 20 Vdc; IC = 100 mAdc; L = 1 mH Clamped Inductive Load TA = +250C; duty cycle ≤ 5%; Tp = 1.5 ms; (vary to obtain IC); VCC = 20 Vdc; IC = 8 Adc; L = 180 µH (See Figure 5 of MIL-PRF-19500/525) Clamped Voltage = 350 Vdc 2N6546 Clamped Voltage = 450 Vdc 2N6547 3.) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%. 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 2 of 2