1N6620US thru 1N6625US VOIDLESS-HERMETICALLYSEALED SURFACE MOUNT ULTRA FAST RECOVERY GLASS RECTIFIERS SCOTTSDALE DIVISION APPEARANCE This “Ultrafast Recovery” rectifier diode series is military qualified to MIL-PRF19500/585 and is ideal for high-reliability applications where a failure cannot be tolerated. These industry-recognized 1.5 to 2.0 Amp rated rectifiers for working peak reverse voltages from 200 to 1000 volts are hermetically sealed with voidlessglass construction using an internal “Category I” metallurgical bond. These devices are also available in axial-leaded packages for thru-hole mounting (see separate data sheet for 1N6620 thru 1N6625). Microsemi also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speed requirements including standard, fast and ultrafast device types in both through-hole and surface mount packages. Package “A” or D-5A IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com FEATURES • • • • • • • • APPLICATIONS / BENEFITS Surface mount series equivalent to the JEDEC registered 1N6620 to 1N6625 series Voidless hermetically sealed glass package Extremely robust construction Triple-layer passivation Internal “Category I” Metallurgical bonds JAN, JANTX, and JANTXV available per MIL-PRF19500/585 Further options for screening in accordance with MILPRF-19500 for JANS by using a “SP” prefix, e.g. SP6620US, SP6624US, etc. Axial-leaded equivalents also available (see separate data sheet for 1N6620 thru 1N6625) • • • • • • • MECHANICAL AND PACKAGING o • • • • • • • CASE: Hermetically sealed voidless hard glass with Tungsten slugs TERMINATIONS: End caps are Copper with Tin/Lead (Sn/Pb) finish. Note: Previous inventory had solid Silver end caps with Tin/Lead plating. MARKING: Cathode band only POLARITY: Cathode indicated by band Tape & Reel option: Standard per EIA-481-B Weight: 193 mg See package dimensions and recommended pad layout on last page Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 1 1N6620US – 1N6625US • Junction Temperature: -65 C to +150 C • Storage Temperature: -65oC to +175oC o • Peak Forward Surge Current @ 25 C: 20 Amps (except 1N6625 which is 15 Amps) Note: Test pulse = 8.3 ms, half-sine wave. • Average Rectified Forward Current (IO) at TEC=+110oC: 1N6620 thru 1N6622: 2.0 Amps 1N6623 thru 1N6625: 1.5 Amps (Derate linearly at 1.5%/oC for TEC > +110oC) o • Average Rectified Forward Current (IO) at TA=25 C: 1N6620 thru 1N6622: 1.2 Amps 1N6623 thru 1N6625: 1.0 Amp (Derate linearly at 0.67%/ oC for TA>+25oC. This IO rating is typical for PC boards where thermal resistance from mounting point to ambient is sufficiently controlled where TJ(max) is not exceeded.) • Thermal Resistance junction to endcap (RθJEC): 13oC/W • Capacitance at VR= 10 V: 10 pF o • Solder temperature: 260 C for 10 s (maximum) Copyright © 2009 10-06-2009 REV E; SD52A.pdf Ultrafast recovery rectifier series 200 to 1000 V Military and other high-reliability applications Switching power supplies or other applications requiring extremely fast switching & low forward loss High forward surge current capability Low thermal resistance Controlled avalanche with peak reverse power capability Inherently radiation hard as described in Microsemi MicroNote 050 MAXIMUM RATINGS o WWW . Microsemi .C OM DESCRIPTION 1N6620US thru 1N6625US VOIDLESS-HERMETICALLYSEALED SURFACE MOUNT ULTRA FAST RECOVERY GLASS RECTIFIERS SCOTTSDALE DIVISION TYPE NUMBER 1N6620 1N6621 1N6622 1N6623 1N6624 1N6625 MAXIMUM FORWARD VOLTAGE VF @ IF MINIMUM BREAKDOWN VOLTAGE VR IR = 50μA V 220 440 660 880 990 1100 V@A 1.40V @ 1.2A 1.40V @ 1.2A 1.40V @ 1.2A 1.55V @ 1.0A 1.55V @ 1.0A 1.75V @ 1.0A WORKING PEAK REVERSE VOLTAGE VRWM V@A 1.60V @ 2.0A 1.60V @ 2.0A 1.60V @ 2.0A 1.80V @ 1.5A 1.80V @ 1.5A 1.95V @ 1.5A V 200 400 600 800 900 1000 MAXIMUM REVERSE CURRENT IR @ VRWM IR TA=25oC TA=150oC μA 0.5 0.5 0.5 0.5 0.5 1.0 Note 1 Note 2 PEAK RECOVERY CURRENT IRM (rec) IF = 2A, 100A/μs Note 2 ns 30 30 30 50 50 60 ns 45 45 45 60 60 80 A 3.5 3.5 3.5 4.2 4.2 5.0 MAXIMUM REVERSE RECOVERY TIME (LOW CURRENT) μA 150 150 150 150 150 200 trr MAXIMUM REVERSE RECOVERY TIME (HIGH CURRENT) trr FORWARD RECOVERY VOLTAGE VFRM Max IF = 0.5A tfr =12ns V 12 12 12 18 18 30 WWW . Microsemi .C OM ELECTRICAL CHARACTERISTICS @ 25oC NOTE 1: Low Current Reverse Recovery Time Test Conditions: IF=0.5A, IRM=1.0A, IR(REC) = 0.25A per MIL-STD-750, Method 4031, Condition B. NOTE 2: High Current Reverse Recovery Time Test Conditions: IF = 2 A, di/dt=100 A/μs MIL-STD-750, Method 4031, Condition D. SYMBOLS & DEFINITIONS Definition Symbol VBR VRWM VF IR C trr Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current. Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating temperature range. Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current. Maximum Reverse Current: The maximum reverse (leakage) current that will flow at the specified voltage and temperature. Capacitance: The capacitance of the TVS as defined @ 0 volts at a frequency of 1 MHz and stated in picofarads. Reverse Recovery Time: The time interval between the instant the current passes through zero when changing from the forward direction to the reverse direction and a specified recovery decay point after a peak reverse current is reached. CHARTS AND GRAPHS Copyright © 2009 10-06-2009 REV E; SD52A.pdf 1N6620US – 1N6625US FIGURE 1 Typical Forward Current vs Forward Voltage FIGURE 2 Typical Forward Current vs Forward Voltage Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 2 1N6620US thru 1N6625US VOIDLESS-HERMETICALLYSEALED SURFACE MOUNT ULTRA FAST RECOVERY GLASS RECTIFIERS FIGURE 4 Typical Reverse Current vs. Applied Reverse Voltage Pulse Duration Pulse Duration FIGURE 5 Forward Pulse Current vs. Pulse Duration Copyright © 2009 10-06-2009 REV E; SD52A.pdf 1N6620US – 1N6625US PR – Reverse Pulse Power – (W) IFSM - Forward Pulse Current – (A) FIGURE 3 Typical Reverse Current vs. Applied Reverse Voltage WWW . Microsemi .C OM PR – Reverse Pulse Power – (W) IFSM - Forward Pulse Current – (A) SCOTTSDALE DIVISION FIGURE 6 Reverse Pulse Power vs. Pulse Duration Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 3 1N6620US thru 1N6625US SCOTTSDALE DIVISION VOIDLESS-HERMETICALLYSEALED SURFACE MOUNT ULTRA FAST RECOVERY GLASS RECTIFIERS WWW . Microsemi .C OM PACKAGE DIMENSIONS NOTE: This Package Outline has also previously been identified as “D-5A” INCHES MIN MAX PAD LAYOUT INCHES mm A 0.246 6.25 MAX B 0.067 1.70 C 0.105 2.67 mm MIN BD .097 .103 2.46 2.62 BL .185 .200 4.70 5.08 ECT .019 .028 0.48 0.71 S .003 --- 0.08 --- Note: If mounting requires adhesive separate from the solder, an additional 0.060 inch diameter contact may be placed in the center between the pads as an optional spot for cement. 1N6620US – 1N6625US Copyright © 2009 10-06-2009 REV E; SD52A.pdf Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 4