TECHNICAL DATA NPN DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/472 Devices Qualified Level 2N6350 2N6351 2N6352 JAN JANTX JANTXV 2N6353 MAXIMUM RATINGS Symbol 2N6350 2N6352 2N6351 2N6353 Units Collector-Emitter Voltage Collector-Base Voltage VCER VCBO 80 80 150 150 Emitter-Base Voltage VEBO Vdc Vdc Vdc Vdc Adc Adc Adc Ratings Base Current IB Collector Current IC 12 6.0 0.5 5.0 10(1) 2N6350 2N6351 Total Power Dissipation @ TA = 250C @ TC = 1000C Operating & Storage Junction Temperature Range PT TJ, Tstg 2N6352 2N6353 1.0(2) 2.0(4) (3) 5.0 25(5) -65 to +200 2N6350, 2N6351 TO-33* W W 0 C THERMAL CHARACTERISTICS Characteristics Symbol 2N6350 2N6351 2N6352 2N6353 Thermal Resistance, Junction-to-Case 1) Applies for tp ≤ 10 ms, Duty cycle ≤ 50% 2) Derate linearly @ 5.72 mW/0C above TA > 250C 3) Derate linearly @ 50 mW/0C above TC > 1000C 4) Derate linearly @ 11.4 mW/0C above TA > 250C 5) Derate linearly @ 250 mW/0C above TC > 1000C RθJC 20 4.0 Unit 0 C/W 2N6352, 2N6353 TO-24* (TO-213AA) *See Appendix A for package outline ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted) Characteristics Symbol Min. V(BR)CER 80 150 Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 25 mAdc, RB1E = 2.2 kΩ, RB2E = 100 Ω 2N6350, 2N6352 2N6351, 2N6353 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 Vdc 120101 Page 1 of 2 2N6350, 2N6351, 2N6352, 2N6353 JAN SERIES ELECTRICAL CHARACTERISTICS (con’t) Characteristics Emitter-Base Breakdown Voltage IEB = 12 mAdc, Base 1 Open IEB = 12 mAdc, Base 2 Open Collector-Emitter Cutoff Current VEB1 = 2.0 Vdc, RB2E = 100 Ω, VCE = 80 Vdc VEB1 = 2.0 Vdc, RB2E = 100 Ω, VCE = 150 Vdc 2N6350, 2N6352 2N6351, 2N6353 Symbol Min. V(BR)EBO 6.0 12 Max. Vdc 1.0 1.0 ICEX Unit µAdc ON CHARACTERISTICS (6) Forward-Current Transfer Ratio IC = 1.0 Adc, VCE = 5.0 Vdc, RB2E = 1.0 Ω IC = 5.0 Adc, VCE = 5.0 Vdc, RB2E = 100 Ω IC = 10 Adc, VCE = 5.0 Vdc, RB2E = 100 Ω IC = 1.0 Adc, VCE = 5.0 Vdc, RB2E = 1.0 Ω IC = 5.0 Adc, VCE = 5.0 Vdc, RB2E = 100 Ω IC = 10 Adc, VCE = 5.0 Vdc, RB2E = 100 Ω Collector-Emitter Saturation Voltage IC = 5.0 Adc, RB2E = 100 Ω, IB1 = 5.0 mAdc IC = 5.0 Adc, RB2E = 100 Ω, IB1 = 10 mAdc Base-Emitter Voltage IC = 5.0 Adc, VCE = 5.0 Vdc, RB2E = 100 Ω 2N6350, 2N6352 hFE 2N6351, 2N6353 2N6350, 2N6352 2N6351, 2N6353 2,000 2,000 400 10,000 1,000 1,000 200 10,000 VCE(sat) 1.5 2.5 Vdc VBE1(on) 2.5 Vdc DYNAMIC CHARACTERISTICS Magnitude of Common Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 1.0 Adc, VCE = 10 Vdc, RB2E = 100 Ω; f = 10 MHz Output Capacitance VCB1 = 10 Vdc, 100 kHz ≤ f ≤ 1.0 MHz, Base 2 Open hfe 5.0 25 120 pF on 0.5 µs off 1.2 µs Cobo SWITCHING CHARACTERISTICS Turn-On Time VCC = 30 Vdc; IC = 5.0 Adc Turn-Off Time VCC = 30 Vdc; IC = 5.0 Adc (See fig 4 for 2N6350, 2N6352) (See fig 5 for 2N6350, 2N6352) t (See fig 4 for 2N6350, 2N6352) (See fig 5 for 2N6350, 2N6352) t SAFE OPERATING AREA DC Tests TC = +1000C, 1 Cycle, t ≥ 1.0 s, tr + tf = 10 µs, RB2E = 100 Ω (See fig 6 for 2N6350, 2N6351) Test 1 VCE = 1.5Vdc, IC = 3.3 Adc 2N6350, 2N6351 Test 2 VCE = 30 Vdc, IC = 167 mAdc 2N6350, 2N6351 Test 3 VCE = 80 Vdc, IC = 35 mAdc 2N6350 Test 4 VCE = 150 Vdc, IC = 13 mAdc 2N6351 TC = +1000C, 1 Cycle, t ≥ 1.0 s, tr + tf = 10 µs, RB2E = 100 Ω (See fig 7 for 2N6352, 2N6353) Test 1 VCE = 5.0Vdc, IC = 5.0 Adc 2N6352, 2N6353 Test 2 VCE = 10 Vdc, IC = 2.5 Adc 2N6352, 2N6353 Test 3 VCE = 80 Vdc, IC = 95 mAdc 2N6352 Test 4 VCE = 150 Vdc, IC = 35 mAdc 2N6353 (6) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%. 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 2 of 2