MICRONAS HAL320UA-A

Hardware
Documentation
Data Sheet
®
HAL 320
Differential Hall-Effect
Sensor IC
Edition Nov. 25, 2008
DSH000017_002EN
HAL320
DATA SHEET
Copyright, Warranty, and Limitation of Liability
Micronas Trademarks
The information and data contained in this document are
believed to be accurate and reliable. The software and
proprietary information contained therein may be protected by copyright, patent, trademark and/or other intellectual property rights of Micronas. All rights not expressly granted remain reserved by Micronas.
– HAL
Micronas assumes no liability for errors and gives no
warranty representation or guarantee regarding the suitability of its products for any particular purpose due to
these specifications.
By this publication, Micronas does not assume responsibility for patent infringements or other rights of third parties which may result from its use. Commercial conditions, product availability and delivery are exclusively
subject to the respective order confirmation.
Micronas Patents
Choppered Offset Compensation protected by Micronas
patents no. US5260614A, US5406202A, EP052523B1,
and EP0548391B1.
Third-Party Trademarks
All other brand and product names or company names
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Any information and data which may be provided in the
document can and do vary in different applications, and
actual performance may vary over time.
All operating parameters must be validated for each customer application by customers technical experts. Any
new issue of this document invalidates previous issues.
Micronas reserves the right to review this document and
to make changes to the documents content at any time
without obligation to notify any person or entity of such
revision or changes. For further advice please contact
us directly.
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the express written consent of Micronas.
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Micronas
HAL320
DATA SHEET
Contents
Page
Section
Title
4
4
4
4
5
5
5
1.
1.1.
1.2.
1.3.
1.4.
1.5.
1.6.
Introduction
Features
Marking Code
Operating Junction Temperature Range
Hall Sensor Package Codes
Solderability and Welding
Pin Connections
6
2.
Functional Description
7
7
12
12
12
12
13
13
15
3.
3.1.
3.2.
3.3.
3.4.
3.4.1.
3.5.
3.6.
3.7.
Specifications
Outline Dimensions
Dimensions of Sensitive Area
Positions of Sensitive Areas
Absolute Maximum Ratings
Storage and Shelf Life
Recommended Operating Conditions
Characteristics
Magnetic Characteristics
20
20
20
20
21
4.
4.1.
4.2.
4.3.
4.4.
Application Notes
Ambient Temperature
Extended Operating Conditions
Start-up Behavior
EMC and ESD
22
5.
Data Sheet History
Micronas
3
HAL320
DATA SHEET
Differential Hall Effect Sensor IC
in CMOS technology
1.1. Features:
Release Notes: Revision bars indicate significant
changes to the previous edition.
– operates from 4.5 V to 24 V supply voltage
1. Introduction
– overvoltage protection
The HAL 320 is a differential Hall switch produced in
CMOS technology. The sensor includes 2 temperaturecompensated Hall plates (2.25 mm apart) with active offset compensation, a differential amplifier with a Schmitt
trigger, and an open-drain output transistor (see Fig.
2–1).
The HAL 320 is a differential sensor which responds to
spatial differences of the magnetic field. The Hall voltages at the two Hall plates, S1 and S2, are amplified with
a differential amplifier. The differential signal is
compared with the actual switching level of the internal
Schmitt trigger. Accordingly, the output transistor is
switched on or off.
The sensor has a bipolar switching behavior and requires positive and negative values of ΔB = BS1 – BS2 for
correct operation.
Basically, there are two ways to generate the differential
signal ΔB:
– Rotating a multi-pole-ring in front of the branded side
of the package (see Fig. 3–1, Fig. 3–2, and Fig. 3–3;
Please use HAL 300 only).
– Back-bias applications:
A magnet on the back side of the package generates
a back-bias field at both Hall plates. The differential
signal ΔB results from the magnetic modulation of the
back-bias field by a rotating ferromagnetic target
(Please use HAL 320 only).
The active offset compensation leads to constant magnetic characteristics over supply voltage and temperature.
The sensor is designed for industrial and automotive applications and operates with supply voltages from 4.5 V
to 24 V in the ambient temperature range from –40 °C
up to 150 °C.
– distance between Hall plates: 2.25 mm
– switching offset compensation at 62 kHz
– reverse-voltage protection at VDD-pin
– short-circuit protected open-drain output by thermal
shutdown
– operates with magnetic fields from DC to 10 kHz
– output turns low with magnetic south pole on branded
side of package and with a higher magnetic flux density in sensitive area S1 as in S2
– on-chip temperature compensation circuitry minimizes shifts of the magnetic parameters over temperature and supply voltage range
– the decrease of magnetic flux density caused by rising
temperature in the sensor system is compensated by
a built-in negative temperature coefficient of hysteresis
– EMC corresponding to ISO 7637
1.2. Marking Code
All Hall sensors have a marking on the package surface
(branded side). This marking includes the name of the
sensor and the temperature range.
1.3. Operating Junction Temperature Range (TJ)
The Hall sensors from Micronas are specified to the chip
temperature (junction temperature TJ).
The HAL 320 is available in the temperature range “A”
only.
A: TJ = –40 °C to +170 °C
The relationship between ambient temperature (TA) and
junction temperature (TJ) is explained in section 4.1. on
page 20.
The HAL 320 is an ideal sensor for target wheel applications, ignition timing, anti-lock brake systems, and revolution counting in extreme automotive and industrial environments
The HAL 320 is available in the SMD-package
SOT89B-2 and in the leaded versions TO92UA-3 and
TO92UA-4.
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Micronas
HAL320
DATA SHEET
1.4. Hall Sensor Package Codes
HALXXXPA-T
Temperature Range: A
Package: SF for SOT89B-2,
UA for TO92UA
Type: 320
Example: HAL320UA-A
→ Type: 320
→ Package: TO92UA
→ Temperature Range: TJ = –40 °C to +170 °C
Hall sensors are available in a wide variety of packaging
versions and quantities. For more detailed information,
please refer to the brochure: “Hall Sensors: Ordering
Codes, Packaging, Handling”.
1.5. Solderability and Welding
Soldering
During soldering reflow processing and manual reworking, a component body temperature of 260 °C should not
be exceeded.
Welding
Device terminals should be compatible with laser and resistance welding. Please note that the success of the
welding process is subject to different welding parameters which will vary according to the welding technique
used. A very close control of the welding parameters is
absolutely necessary in order to reach satisfying results.
Micronas, therefore, does not give any implied or express warranty as to the ability to weld the component.
1.6. Pin Connections
VDD
1
3
OUT
2
GND
Fig. 1–1: Pin configuration
Micronas
5
HAL320
DATA SHEET
HAL320
2. Functional Description
This Hall effect sensor is a monolithic integrated circuit
with 2 Hall plates 2.25 mm apart that switches in response to differential magnetic fields. If magnetic fields
with flux lines perpendicular to the sensitive areas are
applied to the sensor, the biased Hall plates force Hall
voltages proportional to these fields. The difference of
the Hall voltages is compared with the actual threshold
level in the comparator. The temperature-dependent
bias increases the supply voltage of the Hall plates and
adjusts the switching points to the decreasing induction
of magnets at higher temperatures. If the differential
magnetic field exceeds the threshold levels, the open
drain output switches to the appropriate state. The builtin hysteresis eliminates oscillation and provides switching behavior of the output without oscillation.
Magnetic offset caused by mechanical stress at the Hall
plates is compensated for by using the “switching offset
compensation technique”: An internal oscillator provides a two phase clock (see Fig. 2–2). The difference
of the Hall voltages is sampled at the end of the first
phase. At the end of the second phase, both sampled
differential Hall voltages are averaged and compared
with the actual switching point. Subsequently, the open
drain output switches to the appropriate state. The
amount of time that elapses from crossing the magnetic
switch level to the actual switching of the output can vary
between zero and 1/fosc.
Shunt protection devices clamp voltage peaks at the
Output-Pin and VDD-Pin together with external series resistors. Reverse current is limited at the VDD-Pin by an
internal series resistor up to –15 V. No external reverse
protection diode is needed at the VDD-Pin for values
ranging from 0 V to –15 V.
VDD
1
Reverse
Voltage &
Overvoltage
Protection
Temperature
Dependent
Bias
Hall Plate
S1
Short Circuit &
Overvoltage
Protection
Hysteresis
Control
Comparator
Switch
OUT
Output
3
Hall Plate
S2
Clock
GND
2
Fig. 2–1: HAL320 block diagram
fosc
t
DB
DBON
t
VOUT
VOH
VOL
t
IDD
1/fosc = 16 μs
tf
t
Fig. 2–2: Timing diagram
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Micronas
DATA SHEET
HAL320
3. Specifications
3.1. Outline Dimensions
Fig. 3–1:
SOT89B-2: Plastic Small Outline Transistor package, 4 leads, with two sensitive areas
Weight approximately 0.034 g
Micronas
7
HAL320
DATA SHEET
Fig. 3–2:
TO92UA-4: Plastic Transistor Standard UA package, 3 leads, not spread, with two sensitive areas
Weight approximately 0.106 g
8
Micronas
DATA SHEET
HAL320
Fig. 3–3:
TO92UA-3: Plastic Transistor Standard UA package, 3 leads, spread, with two sensitive areas
Weight approximately 0.106 g
Micronas
9
HAL320
DATA SHEET
Fig. 3–4:
TO92UA-4: Dimensions ammopack inline, not spread
10
Micronas
DATA SHEET
HAL320
Fig. 3–5:
TO92UA-3: Dimensions ammopack inline, spread
Micronas
11
HAL320
DATA SHEET
3.2. Dimensions of Sensitive Area
0.08 mm x 0.17 mm
3.3. Positions of Sensitive Areas (nominal values)
SOT89B-2
TO92UA-3/-4
x1 = −1.125 mm
x2 = 1.125 mm
x1 − x2 = 2.25 mm
y = 0.95 mm
y = 1.0 mm
Bd = 0.2 mm
3.4. Absolute Maximum Ratings
Stresses beyond those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. This
is a stress rating only. Functional operation of the device at these conditions is not implied. Exposure to absolute maximum rating conditions for extended periods will affect device reliability.
This device contains circuitry to protect the inputs and outputs against damage due to high static voltages or electric
fields; however, it is advised that normal precautions be taken to avoid application of any voltage higher than absolute
maximum-rated voltages to this high-impedance circuit.
All voltages listed are referenced to ground (GND).
Symbol
Parameter
Pin No.
Min.
Max.
Unit
VDD
Supply Voltage
1
–15
281)
V
VO
Output Voltage
3
–0.3
281)
V
IO
Continuous Output On Current
3
–
30
mA
TJ
Junction Temperature Range
–40
–40
150
1702)
°C
1) as long as
2) t < 1000h
TJmax is not exceeded
3.4.1. Storage and Shelf Life
The permissible storage time (shelf life) of the sensors is unlimited, provided the sensors are stored at a maximum of
30 °C and a maximum of 85% relative humidity. At these conditions, no Dry Pack is required.
Solderability is guaranteed for one year from the date code on the package.
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Micronas
HAL320
DATA SHEET
3.5. Recommended Operating Conditions
Functional operation of the device beyond those indicated in the “Recommended Operating Conditions” of this specification is not implied, may result in unpredictable behavior of the device and may reduce reliability and lifetime.
All voltages listed are referenced to ground (GND).
Symbol
Parameter
Pin No.
Min.
Max.
Unit
VDD
Supply Voltage
1
4.5
24
V
IO
Continuous Output On Current
3
–
20
mA
VO
Output Voltage
3
–
24
V
3.6. Characteristics at TJ = –40 °C to +170 °C , VDD = 4.5 V to 24 V, GND = 0 V
at Recommended Operation Conditions if not otherwise specified in the column “Conditions”.
Typical Characteristics for TJ = 25 °C and VDD = 12 V
Symbol
Parameter
Pin No.
Min.
Typ.
Max.
Unit
Conditions
IDD
Supply Current
1
2.8
4.7
6.8
mA
TJ = 25 °C
IDD
Supply Current over
Temperature Range
1
1.8
4.7
7.5
mA
VDDZ
Overvoltage Protection
at Supply
1
–
28.5
32.5
V
IDD = 25 mA, TJ = 25 °C,
t = 20 ms
VOZ
Overvoltage Protection at Output
3
–
28
32.5
V
IO = 25 mA, TJ = 25 °C,
t = 20 ms
VOL
Output Voltage over
Temperature Range
3
–
180
400
mV
IO = 20 mA
IOH
Output Leakage Current over
Temperature Range
3
–
0.06
10
μA
VOH = 4.5 V... 24 V,
DB < DBOFF , TJ ≤ 150 °C
fosc
Internal Oscillator
Chopper Frequency
–
–
62
–
kHz
ten(O)
Enable Time of Output
after Setting of VDD
3
–
35
–
μs
VDD = 12 V,
DB > DBON + 2mT or
DB < DBOFF – 2mT
tr
Output Rise Time
3
–
80
400
ns
VDD = 12 V, RL = 820 Ω,
CL = 20 pF
tf
Output Fall Time
3
–
45
400
ns
VDD = 12 V, RL = 820 Ω,
CL = 20 pF
RthJSB
case
SOT89B-2
Thermal Resistance Junction to
Substrate Backside
–
150
200
K/W
Fiberglass Substrate
30 mm x 10 mm x 1.5 mm
(see Fig. 3–6)
RthJS
case
TO92UA-3,
TO92UA-4
Thermal Resistance
Junction to Soldering Point
–
150
200
K/W
Micronas
13
HAL320
DATA SHEET
1.80
1.05
1.45
2.90
1.05
0.50
1.50
Fig. 3–6:
Recommended footprint SOT89B,
Dimensions in mm
Note: All dimensions are for reference only. The pad
size may vary depending on the requirements of
the soldering process.
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Micronas
HAL320
DATA SHEET
3.7. Magnetic Characteristics at TJ = –40 °C to +170 °C, VDD = 4.5 V to 24 V
Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points (Condition: –10 mT < B0 < 10 mT)
Positive flux density values refer to the magnetic south pole at the branded side ot the package. ΔB = BS1 – BS2
–40 °C
Parameter
Min.
Typ.
25 °C
Max.
Min.
170 °C
Typ.
Max.
Min.
Unit
Typ.
Max.
On point ΔBON
ΔB > ΔBON
–1.5
1.2
2.5
-1.5
1.2
2.5
–2.5
1.1
3.5
mT
Off point ΔBOFF
ΔB < ΔBOFF
–2.5
–0.6
1.5
–2.5
–0.6
1.5
–3.5
–0.4
2.5
mT
1
1.8
4
1
1.8
4
0.8
1.5
4
mT
–2
0.3
2
–2
0.3
2
0.4
3
mT
Hysteresis
ΔBHYS = ΔBON – ΔBOFF
Offset ΔBOFFSET = (ΔBON + ΔBOFF)/2
–3
In back-biased applications, sensitivity mismatch between the two Hall plates S1 and S2 can lead to an additional offset
of the magnetic switching points. In back-biased applications with the magnetic preinduction B0, this sensitivity mismatch generates the magnetic offset ΔBOFFSETbb = |S1 – S2|/S1 @ B0 + ΔBOFFSET.
Parameter
Sensitivity mismatch1)
1)
2)
|S1 – S2|/S1
–40 °C
25 °C
170 °C
Unit
1.52)
1.02)
0.52)
%
Mechanical stress from packaging can influence sensitivity mismatch.
All values are typical values.
The magnetic switching points are checked at room temperature at a magnetic preinduction of B0 = 150 mT.
These magnetic parameters may change under external pressure and during the lifetime of the sensor.
25 °C
Parameter
Min.
Unit
Typ.
Max.
On point ΔBONbb
–4.5
1.5
5.5
mT
Off point ΔBOFFbb
–5.5
–0.3
4.5
mT
Hysteresis ΔBHYS
1
1.8
4
mT
–5
0.6
+5
mT
Offset ΔBOFFSETbb
Output Voltage
VOH
VOL
DBOFF min
DBOFF 0
DBHYS
DBON
DBON max
ΔB = BS1 – BS2
Fig. 3–7: Definition of switching points and hysteresis
Micronas
15
HAL320
DATA SHEET
mT
2.0
mT
2.0
VDD = 12 V
BON
BOFF
1.5
BON 1.5
BOFF
BON
1.0
1.0
0.5
0.5
TA = –40 °C
TA = 25 °C
0.0
0.0
TA = 100 °C
TA = 150 °C
–0.5
–0.5
–1.0
–1.0
BOFF
–1.5
–2
–1.5
0
5
10
15
20
25
–2
–50
30 V
0
50
100
VDD
200 °C
TA
Fig. 3–8: Magnetic switch points
versus supply voltage
Fig. 3–10: Magnetic switch points
versus temperature
mT
2.0
BON
BOFF
150
mA
25
20
1.5
BON
TA = –40 °C
IDD
1.0
15
0.5
10
TA = 25 °C
TA = 150 °C
TA = –40 °C
TA = 25 °C
0.0
5
TA = 100 °C
TA = 170 °C
–0.5
0
–5
–1.0
BOFF
–1.5
–2
16
3
3.5
4.0
4.5
5.0
5.5
–10
6.0 V
–15
–15 –10 –5
0
5
10 15 20 25 30 V
VDD
VDD
Fig. 3–9: Magnetic switch points
versus supply voltage
Fig. 3–11: Typical supply current
versus supply voltage
Micronas
HAL320
DATA SHEET
mV
500
mA
8
IO = 20 mA
7
IDD
VOL 400
6
TA = –40 °C
5
TA = 25 °C
300
TA = 150 °C
200
TA = 150 °C
4
3
TA = 25 °C
TA = –40 °C
2
100
1
0
1
2
3
4
5
6 V
0
0
5
10
15
20
25
30 V
VDD
VDD
Fig. 3–12: Supply current
versus supply voltage
Fig. 3–14: Typical output low voltage
versus supply voltage
mA
8
mV
500
IO = 20 mA
7
IDD
VOL 400
6
VDD = 4.5 V
5
300
VDD = 12 V
4
VDD = 24 V
VDD = 4.5 V
3
200
2
100
1
0
–50
0
50
100
150
TA
Fig. 3–13: Supply current
versus ambient temperature
Micronas
200 °C
0
–50
0
50
100
150
200 °C
TA
Fig. 3–15: Typical output low voltage
versus ambient temperature
17
HAL320
DATA SHEET
kHz
70
kHz
70
TA = 25 °C
60
VDD = 12 V
60
fosc
fosc
50
50
40
40
30
30
20
20
10
10
0
0
5
10
15
20
25
0
–50
30 V
0
50
100
Fig. 3–16: Typical internal chopper frequency
versus supply voltage
Fig. 3–18: Typical internal chopper frequency
versus ambient temperature
μA
2
10
kHz
70
TA = 25 °C
60
fosc
IOH
1
10
50
0
10
40
–1
10
30
–2
10
20
–3
10
10
–4
10
3
3.5
4.0
4.5
5.0
5.5
6.0 V
VDD
Fig. 3–17: Typical internal chopper frequency
versus supply voltage
18
200 °C
TA
VDD
0
150
–5
10
–50
VOH = 24 V
VDD = 5 V
0
50
100
150
200 °C
TA
Fig. 3–19: Typical output leakage current
versus ambient temperature
Micronas
HAL320
DATA SHEET
μA
2
10
IOH
VDD = 5 V
1
10
0
10
TA = 125 °C
–1
10
–2
10
TA = 75 °C
–3
10
–4
10
–5
10
20
TA = 25 °C
22
24
26
28
30 V
VOH
Fig. 3–20: Typical output leakage current
versus output voltage
Micronas
19
HAL320
DATA SHEET
4. Application Notes
4.2. Extended Operating Conditions
Mechanical stress can change the sensitivity of the Hall
plates and an offset of the magnetic switching points
may result. External mechanical stress on the sensor
must be avoided if the sensor is used under back-biased
conditions. This piezo sensitivity of the sensor IC cannot
be completely compensated for by the switching offset
compensation technique.
All sensors fulfill the electrical and magnetic characteristics when operated within the Recommended Operating
Conditions (see page 13).
In order to assure switching the sensor on and off in a
back-biased application, the minimum magnetic modulation of the differential field should amount to more than
10% of the magnetic preinduction.
If the HAL 320 sensor IC is used in back-biased applications, please contact our Application Department. They
will provide assistance in avoiding applications which
may induce stress to the ICs. This stress may cause
drifts of the magnetic parameters indicated in this data
sheet.
4.1. Ambient Temperature
Due to the internal power dissipation, the temperature
on the silicon chip (junction temperature TJ) is higher
than the temperature outside the package (ambient temperature TA).
TJ = TA + ΔT
Under static conditions and continuous operation, the
following equation applies:
ΔT = IDD * VDD * Rth
For typical values, use the typical parameters. For worst
case calculation, use the max. parameters for IDD and
Rth, and the max. value for VDD from the application.
Supply Voltage Below 4.5 V
Typically, the sensors operate with supply voltages
above 3 V, however, below 4.5 V some characteristics
may be outside the specification.
Note: The functionality of the sensor below 4.5 V is not
tested on a regular base. For special test conditions, please contact Micronas.
4.3. Start-up Behavior
Due to the active offset compensation, the sensors have
an initialization time (enable time ten(O)) after applying
the supply voltage. The parameter ten(O) is specified in
the Electrical Characteristics (see page 13).
During the initialization time, the output state is not defined and the output can toggle. After ten(O), the output
will be low if the applied magnetic field B is above BON.
The output will be high if B is below BOFF.
For magnetic fields between BOFF and BON, the output
state of the HAL sensor after applying VDD will be either
low or high. In order to achieve a well-defined output
state, the applied magnetic field must be above BONmax,
respectively, below BOFFmin.
For all sensors, the junction temperature range TJ is
specified. The maximum ambient temperature TAmax
can be calculated as:
TAmax = TJmax – ΔT
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Micronas
HAL320
DATA SHEET
4.4. EMC and ESD
For applications with disturbances on the supply line or
radiated disturbances, a series resistor and a capacitor
are recommended (see Fig. 4–1). The series resistor
and the capacitor should be placed as closely as possible to the HAL sensor.
Applications with this arrangement passed the EMC
tests according to the product standard ISO 7637.
Please contact Micronas for the detailed investigation
reports with the EMC and ESD results.
RV
220 Ω
1
VEMC
VP
1.2 kΩ
RL
VDD
OUT
3
4.7 nF
20 pF
2
GND
Fig. 4–1: Test circuit for EMC investigations
Micronas
21
HAL320
DATA SHEET
5. Data Sheet History
1. Final data sheet: “HAL 320 Differential Hall Effect
Sensor IC”, July 15, 1998, 6251-439-1DS. First release of the final data sheet.
2. Final data sheet: “HAL 320 Differential Hall Effect
Sensor IC”, Oct. 19, 2004, 6251-439-2DS. Second
release of the final data sheet. Major changes:
– temperature ranges “C” and “E” removed
– new package diagrams for SOT89B-2 and
TO92UA-4
– package diagram for TO92UA-3 added
– ammopack diagrams for TO92UA-3/-4 added
– new diagram for SOT89B footprint
3. Final data sheet: “HAL 320 Differential Hall Effect
Sensor IC”, Nov. 25, 2008, DSH000017_002. Third
release of the final data sheet. Major changes:
– Section 1.5. “Solderability and Welding” updated
– package diagrams updated
Micronas GmbH
Hans-Bunte-Strasse 19 · D-79108 Freiburg · P.O. Box 840 · D-79008 Freiburg, Germany
Tel. +49-761-517-0 · Fax +49-761-517-2174 · E-mail: [email protected] · Internet: www.micronas.com
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Micronas