Hardware Documentation D at a S h e e t ® HAL 320 Differential Hall-Effect Sensor IC Family Edition Jan. 27, 2012 DSH000017_003EN HAL 320 DATA SHEET Copyright, Warranty, and Limitation of Liability The information and data contained in this document are believed to be accurate and reliable. The software and proprietary information contained therein may be protected by copyright, patent, trademark and/or other intellectual property rights of Micronas. All rights not expressly granted remain reserved by Micronas. Micronas assumes no liability for errors and gives no warranty representation or guarantee regarding the suitability of its products for any particular purpose due to these specifications. By this publication, Micronas does not assume responsibility for patent infringements or other rights of third parties which may result from its use. Commercial conditions, product availability and delivery are exclusively subject to the respective order confirmation. Micronas Trademarks – HAL Patents Choppered Offset Compensation Micronas patents no. US5406202A. protected by Third-Party Trademarks All other brand and product names or company names may be trademarks of their respective companies. Any information and data which may be provided in the document can and do vary in different applications, and actual performance may vary over time. All operating parameters must be validated for each customer application by customers’ technical experts. Any new issue of this document invalidates previous issues. Micronas reserves the right to review this document and to make changes to the document’s content at any time without obligation to notify any person or entity of such revision or changes. For further advice please contact us directly. Do not use our products in life-supporting systems, aviation and aerospace applications! Unless explicitly agreed to otherwise in writing between the parties, Micronas’ products are not designed, intended or authorized for use as components in systems intended for surgical implants into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the product could create a situation where personal injury or death could occur. No part of this publication may be reproduced, photocopied, stored on a retrieval system or transmitted without the express written consent of Micronas. 2 Jan. 27, 2012; DSH000017_003EN Micronas HAL 320 DATA SHEET Contents Page Section Title 4 4 4 4 5 5 5 1. 1.1. 1.2. 1.3. 1.4. 1.5. 1.6. Introduction Features: Marking Code Operating Junction Temperature Range (TJ) Hall Sensor Package Codes Solderability and Welding Pin Connections 6 2. Functional Description 7 7 12 12 12 12 13 13 15 3. 3.1. 3.2. 3.3. 3.4. 3.4.1. 3.5. 3.6. 3.7. Specifications Outline Dimensions Dimensions of Sensitive Area Package Parameters and Position of Sensitive Areas Absolute Maximum Ratings Storage and Shelf Life Recommended Operating Conditions Characteristics Magnetic Characteristics 20 20 20 20 21 4. 4.1. 4.2. 4.3. 4.4. Application Notes Ambient Temperature Extended Operating Conditions Start-up Behavior EMC and ESD 22 5. Data Sheet History Micronas Jan. 27, 2012; DSH000017_003EN 3 HAL 320 DATA SHEET Differential Hall-Effect Sensor IC 1.1. Features: Release Note: Revision bars indicate significant changes to the previous edition. – Distance between Hall plates: 2.25 mm – Operates from 4.5 V to 24 V supply voltage – Switching offset compensation at 62 kHz 1. Introduction – Overvoltage protection The HAL 320 is a differential Hall switch produced in CMOS technology. The sensor includes two temperature-compensated Hall plates (2.25 mm apart) with active offset compensation, a differential amplifier with a Schmitt trigger, and an open-drain output transistor (see Fig. 2–1). – Reverse-voltage protection at VDD-pin The HAL 320 is a differential sensor which responds to spatial differences of the magnetic field. The Hall voltages at the two Hall plates, S1 and S2, are amplified with a differential amplifier. The differential signal is compared with the actual switching level of the internal Schmitt trigger. Accordingly, the output transistor is switched on or off. The sensor has a bipolar switching behavior and requires positive and negative values of B = BS1 BS2 for correct operation. Basically, there are two ways to generate the differential signal B: Rotating a multi-pole-ring in front of the branded side of the package (see Fig. 3–1, Fig. 3–2, and Fig. 3–3; Please use HAL 300 only). – Back-bias applications: A magnet on the back side of the package generates a back-bias field at both Hall plates. The differential signal B results from the magnetic modulation of the back-bias field by a rotating ferromagnetic target (Please use HAL 320 only). The active offset compensation leads to constant magnetic characteristics over supply voltage and temperature. The sensor is designed for industrial and automotive applications and operates with supply voltages from 4.5 V to 24 V in the ambient temperature range from –40 °C up to 150 °C. – Short-circuit protected open-drain output by thermal shutdown – Operates with magnetic fields from DC to 10 kHz – Output turns low with magnetic south pole on branded side of package and with a higher magnetic flux density in sensitive area S1 as in S2 – On-chip temperature compensation circuitry minimizes shifts of the magnetic parameters over temperature and supply voltage range – The decrease of magnetic flux density caused by rising temperature in the sensor system is compensated by a built-in negative temperature coefficient of hysteresis 1.2. Marking Code All Hall sensors have a marking on the package surface (branded side). This marking includes the name of the sensor and the temperature range. Type HAL 320 Temperature Range A I C 320A 320I 320C 1.3. Operating Junction Temperature Range (TJ) The Hall sensors from Micronas are specified to the chip temperature (junction temperature TJ). The HAL 320 is available in following temperature ranges: A: TJ = –40 °C to +170 °C The HAL 320 is an ideal sensor for target wheel applications, ignition timing, anti-lock brake systems, and revolution counting in extreme automotive and industrial environments C: TJ = 0 °C to +85 °C The HAL 320 is available in the SMD-package SOT89B-2 and in the leaded versions TO92UA-3 and TO92UA-4. The relationship between ambient temperature (TA) and junction temperature (TJ) is explained in section 4.1. on page 20. 4 I: TJ = –20 °C to +125 °C Jan. 27, 2012; DSH000017_003EN Micronas HAL 320 DATA SHEET 1.4. Hall Sensor Package Codes HALXXXPA-T Temperature Range: A,I,C Package: SF for SOT89B-2, UA for TO92UA Type: 320 Example: HAL320UA-A Type: 320 Package: TO92UA Temperature Range: TJ = 40 C to +170 C Hall sensors are available in a wide variety of packaging versions and quantities. For more detailed information, please refer to the brochure: “Hall Sensors. Ordering Codes, Packaging, Handling”. 1.5. Solderability and Welding Soldering During soldering reflow processing and manual reworking, a component body temperature of 260 C should not be exceeded. Welding Device terminals should be compatible with laser and electrical resistance welding. Please, note that the success of the welding process is subject to different welding parameters which will vary according to the welding technique used. A very close control of the welding parameters is absolutely necessary in order to reach satisfying results. Micronas, therefore, does not give any implied or express warranty as to the ability to weld the component. 1.6. Pin Connections 1 VDD 3 OUT 2 GND Fig. 1–1: Pin configuration Micronas Jan. 27, 2012; DSH000017_003EN 5 HAL 320 DATA SHEET 2. Functional Description HAL320 This Hall effect sensor is a monolithic integrated circuit with two Hall plates 2.25 mm apart that switches in response to differential magnetic fields. If magnetic fields with flux lines perpendicular to the sensitive areas are applied to the sensor, the biased Hall plates force Hall voltages proportional to these fields. The difference of the Hall voltages is compared with the actual threshold level in the comparator. The temperature-dependent bias increases the supply voltage of the Hall plates and adjusts the switching points to the decreasing induction of magnets at higher temperatures. If the differential magnetic field exceeds the threshold levels, the open drain output switches to the appropriate state. The builtin hysteresis eliminates oscillation and provides switching behavior of the output without oscillation. Magnetic offset caused by mechanical stress at the Hall plates is compensated for by using the “switching offset compensation technique”: An internal oscillator provides a two phase clock (see Fig. 2–2). The difference of the Hall voltages is sampled at the end of the first phase. At the end of the second phase, both sampled differential Hall voltages are averaged and compared with the actual switching point. Subsequently, the open drain output switches to the appropriate state. The amount of time that elapses from crossing the magnetic switch level to the actual switching of the output can vary between zero and 1/fosc. Shunt protection devices clamp voltage peaks at the Output-Pin and VDD-Pin together with external series resistors. Reverse current is limited at the VDD-Pin by an internal series resistor up to 15 V. No external reverse protection diode is needed at the VDD-Pin for values ranging from 0 V to –15 V. VDD 1 Reverse Voltage & Overvoltage Protection Temperature Dependent Bias Hall Plate S1 Hysteresis Control Short Circuit & Overvoltage Protection Comparator Switch OUT Output 3 Hall Plate S2 Clock GND 2 Fig. 2–1: HAL 320 block diagram fosc t B BON t VOUT VOH VOL t IDD 1/fosc = 16 µs tf t Fig. 2–2: Timing diagram 6 Jan. 27, 2012; DSH000017_003EN Micronas HAL 320 DATA SHEET 3. Specifications 3.1. Outline Dimensions Fig. 3–1: SOT89B-2: Plastic Small Outline Transistor package, 4 leads, with two sensitive areas Ordering code: SF Weight approximately 0.034 g Micronas Jan. 27, 2012; DSH000017_003EN 7 HAL 320 DATA SHEET Fig. 3–2: TO92UA-4: Plastic Transistor Standard UA package, 3 leads, spread Weight approximately 0.105 g 8 Jan. 27, 2012; DSH000017_003EN Micronas HAL 320 DATA SHEET Fig. 3–3: TO92UA-3: Plastic Transistor Standard UA package, 3 leads, spread Weight approximately 0.105 g Micronas Jan. 27, 2012; DSH000017_003EN 9 HAL 320 DATA SHEET Fig. 3–4: TO92UA/UT: Dimensions ammopack inline, not spread 10 Jan. 27, 2012; DSH000017_003EN Micronas HAL 320 DATA SHEET Fig. 3–5: TO92UA/UT: Dimensions ammopack inline, spread Micronas Jan. 27, 2012; DSH000017_003EN 11 HAL 320 DATA SHEET 3.2. Dimensions of Sensitive Area 0.08 mm 0.17 mm 3.3. Package Parameters and Position of Sensitive Areas SOT89B-2 TO92UA-3/-4 x1 = 1.125 mm (nominal values) x2 = 1.125 mm (nominal values) x1 x2 = 2.25 mm (nominal values) y= 0.95 mm (nominal values) y= 1.0 mm (nominal values) Bd = 0.2 mm n.a. H1= min. 21 mm max. 23 mm 3.4. Absolute Maximum Ratings Stresses beyond those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only. Functional operation of the device at these conditions is not implied. Exposure to absolute maximum rating conditions for extended periods will affect device reliability. This device contains circuitry to protect the inputs and outputs against damage due to high static voltages or electric fields; however, it is advised that normal precautions be taken to avoid application of any voltage higher than absolute maximum-rated voltages to this high-impedance circuit. All voltages listed are referenced to ground (GND). Symbol Parameter Pin Name Min. Max. Unit VDD Supply Voltage 1 15 281) V VO Output Voltage 3 0.3 281) V IO Continuous Output On Current 3 30 mA TJ Junction Temperature Range 40 40 150 1702) C 1) 2) as long as TJmax is not exceeded t < 1000 h 3.4.1. Storage and Shelf Life The permissible storage time (shelf life) of the sensors is unlimited, provided the sensors are stored at a maximum of 30 °C and a maximum of 85% relative humidity. At these conditions, no Dry Pack is required. Solderability is guaranteed for one year from the date code on the package. 12 Jan. 27, 2012; DSH000017_003EN Micronas HAL 320 DATA SHEET 3.5. Recommended Operating Conditions Functional operation of the device beyond those indicated in the “Recommended Operating Conditions/Characteristics” is not implied and may result in unpredictable behavior, reduce reliability and lifetime of the device. All voltages listed are referenced to ground (GND). Symbol Parameter Pin Name Min. Max. Unit VDD Supply Voltage 1 4.5 24 V IO Continuous Output on Current 3 20 mA VO Output Voltage 3 24 V 3.6. Characteristics at TJ = 40 °C to +170 °C, VDD = 4.5 V to 24 V, GND = 0 V at Recommended Operation Conditions if not otherwise specified in the column “Conditions”. Typical Characteristics for TJ = 25 °C and VDD = 12 V. For all other temperatur ranges this table is also valid, but only in the junction temperature range defined by the temperatur grade (Example: For C-Type this table is limited to TJ= 0 °C to +85 °C). Symbol Parameter Pin No. Min. Typ. Max. Unit Conditions IDD Supply Current 1 2.8 4.7 6.8 mA TJ = 25 °C IDD Supply Current over Temperature Range 1 1.8 4.7 7.5 mA VDDZ Overvoltage Protection at Supply 1 28.5 32.5 V IDD = 25 mA, TJ = 25 C, t = 20 ms VOZ Overvoltage Protection at Output 3 28 32.5 V IOH = 25 mA, TJ = 25 C, t = 20 ms VOL Output Voltage over Temperature Range 3 180 400 mV IOL = 20 mA IOH Output Leakage Current over Temperature Range 3 0.06 10 µA VOH = 4.5 V...24 V, B < BOFF,TJ 150 C, fosc Internal Oscillator Chopper Frequency 62 kHz ten(O) Enable Time of Output after Setting of VDD 3 35 µs VDD = 12 V, B > BON+ 2 mT or B < BOFF 2 mT tr Output Rise Time 3 80 400 ns VDD = 12 V, RL = 820 , CL = 20 pF tf Output Fall Time 3 45 400 ns VDD = 12 V, RL = 820 , CL = 20 pF RthJSB case SOT89B-2 Thermal Resistance Junction to Substrate Backside 150 200 K/W Fiberglass Substrate 30 mm x 10 mm x 1.5 mm (see Fig. 3–6) RthJS case TO92UA-3 TO92UA-4 Thermal Resistance Junction to Soldering Point 150 200 K/W Micronas Jan. 27, 2012; DSH000017_003EN 13 HAL 320 DATA SHEET 1.80 1.05 1.45 2.90 1.05 0.50 1.50 Fig. 3–6: Recommended footprint SOT89B, Dimensions in mm Note: All dimensions are for reference only. The pad size may vary depending on the requirements of the soldering process. 14 Jan. 27, 2012; DSH000017_003EN Micronas HAL 320 DATA SHEET 3.7. Magnetic Characteristics at TJ = 40 °C to +170 °C, VDD = 4.5 V to 24 V, Typical Characteristics for VDD = 12 V. Magnetic flux density values of switching points (Condition: 10 mT < B0 < 10 mT). Positive flux density values refer to the magnetic south pole at the branded side of the package. B = BS1 BS2 40 °C Parameter Min. 25 °C Typ. Max . Min. Typ. Max . Min. Typ. Max . 1.5 1.2 Off point BOFF B > BOFF 2.5 0.6 1.5 2.5 0.6 1.5 3.5 0.4 2.5 Hysteresis BHYS = BON BOFF 1 1.8 4 1 1.8 4 0.8 1.5 2 0.3 2 2 0.3 2 3 0.4 Offset 2.5 2.5 2.5 1.1 125 °C On point BON B > BON BOFFSET = (BON BOFF)/2 1.5 1.2 85 °C 3.5 Min. Typ. 2.5 1.1 170 °C Max . 3.5 Min. Typ. 2.5 1.1 Unit Max . 3.5 mT 3.5 0.4 2.5 3.5 0.4 2.5 mT 4 0.8 1.5 4 0.8 1.5 4 mT 3 3 0.4 3 3 0.4 3 mT In back-biased applications, sensitivity mismatch between the two Hall plates S1 and S2 can lead to an additional offset of the magnetic switching points. In back-biased applications with the magnetic preinduction B0, this sensitivity mismatch generates the magnetic offset BOFFSETbb = |S1 S2|/S1 B0 + BOFFSET. 40 °C Parameter Sensivity mismatch |S1 S2|/S1 1) 25 °C 2) 1.5 1.0 170 °C 2) 0.5 Unit 2) % 1) Mechanical 2) stress from packaging can influence sensivity mismatch. All values are typical values. The magnetic switching points are checked at room temperature at a magnetic preinduction of B0 = 150 mT. These magnetic parameters may change under external pressure and during the lifetime of the sensor. Parameter 25 °C Unit Min. Typ. Max. On point BONbb 4.5 1.5 5.5 mT Off point BOFFbb 5.5 0.3 4.5 mT Hysteresis BHYS 1 1.8 4 mT Offset BOFFSETbb 5 0.6 +5 mT Output Voltage VOH VOL BOFF min BOFF 0 BHYS BON BON max ΔB = BS1 – BS2 Fig. 3–7: Definition of switching points and hysteresis Micronas Jan. 27, 2012; DSH000017_003EN 15 HAL 320 DATA SHEET mT 2.0 mT 2.0 VDD = 12 V BON BOFF 1.5 BON 1.5 BOFF BON 1.0 1.0 0.5 0.5 TA = –40 °C TA = 25 °C 0.0 0.0 TA = 100 °C TA = 150 °C –0.5 –0.5 –1.0 –1.0 BOFF –1.5 –2 –1.5 0 5 10 15 20 25 –2 –50 30 V 0 50 100 VDD 200 °C TA Fig. 3–8: Magnetic switch points versus supply voltage Fig. 3–10: Magnetic switch points versus temperature mT 2.0 BON BOFF 150 mA 25 20 1.5 BON TA = –40 °C IDD 1.0 15 0.5 10 TA = 25 °C TA = 150 °C TA = –40 °C TA = 25 °C 0.0 5 TA = 100 °C TA = 170 °C –0.5 0 –5 –1.0 BOFF –1.5 –2 16 3 3.5 4.0 4.5 5.0 5.5 –10 6.0 V –15 –15 –10 –5 0 5 10 15 20 25 30 V VDD VDD Fig. 3–9: Magnetic switch points versus supply voltage Fig. 3–11: Typical supply current versus supply voltage Jan. 27, 2012; DSH000017_003EN Micronas HAL 320 DATA SHEET mV 500 mA 8 IO = 20 mA 7 IDD VOL 400 6 TA = –40 °C 5 TA = 150 °C 300 TA = 25 °C 4 TA = 150 °C 3 TA = 25 °C 200 TA = –40 °C 2 100 1 0 1 2 3 4 5 0 6 V 0 5 10 15 20 25 30 V VDD VDD Fig. 3–12: Supply current versus supply voltage Fig. 3–14: Typical output low voltage versus supply voltage mA 8 mV 500 IO = 20 mA 7 IDD VOL 400 6 VDD = 4.5 V 5 300 VDD = 12 V 4 VDD = 24 V VDD = 4.5 V 3 200 2 100 1 0 –50 0 50 100 150 200 °C 0 –50 TA Fig. 3–13: Supply current versus ambient temperature Micronas 0 50 100 150 200 °C TA Fig. 3–15: Typical output low voltage versus ambient temperature Jan. 27, 2012; DSH000017_003EN 17 HAL 320 DATA SHEET kHz 70 kHz 70 TA = 25 °C 60 VDD = 12 V 60 fosc fosc 50 50 40 40 30 30 20 20 10 10 0 0 5 10 15 20 25 0 –50 30 V 0 50 100 Fig. 3–16: Typical internal chopper frequency versus supply voltage Fig. 3–18: Typical internal chopper frequency versus ambient temperature µA 2 10 kHz 70 TA = 25 °C 60 fosc IOH 1 10 50 0 10 40 –1 10 30 –2 10 20 –3 10 10 –4 10 3 3.5 4.0 4.5 5.0 5.5 6.0 V –5 10 –50 VDD VOH = 24 V VDD = 5 V 0 50 100 150 200 °C TA Fig. 3–17: Typical internal chopper frequency versus supply voltage 18 200 °C TA VDD 0 150 Fig. 3–19: Typical output leakage current versus ambient temperature Jan. 27, 2012; DSH000017_003EN Micronas HAL 320 DATA SHEET µA 2 10 IOH VDD = 5 V 1 10 0 10 TA = 125 °C –1 10 –2 10 TA = 75 °C –3 10 –4 10 –5 10 20 TA = 25 °C 22 24 26 28 30 V VOH Fig. 3–20: Typical output leakage current versus output voltage Micronas Jan. 27, 2012; DSH000017_003EN 19 HAL 320 DATA SHEET 4. Application Notes 4.2. Extended Operating Conditions Mechanical stress can change the sensitivity of the Hall plates and an offset of the magnetic switching points may result. External mechanical stress on the sensor must be avoided if the sensor is used under back-biased conditions. This piezo sensitivity of the sensor IC cannot be completely compensated for by the switching offset compensation technique. All sensors fulfill the electrical and magnetic characteristics when operated within the Recommended Operating Conditions (see page 13). In order to assure switching the sensor on and off in a back-biased application, the minimum magnetic modulation of the differential field should amount to more than 10% of the magnetic preinduction. If the HAL 320 sensor IC is used in back-biased applications, please contact our Application Department. They will provide assistance in avoiding applications which may induce stress to the ICs. This stress may cause drifts of the magnetic parameters indicated in this data sheet. 4.1. Ambient Temperature Due to the internal power dissipation, the temperature on the silicon chip (junction temperature TJ) is higher than the temperature outside the package (ambient temperature TA). TJ = TA + T Under static conditions and continuous operation, the following equation applies: T = IDD * VDD * Rth For typical values, use the typical parameters. For worst case calculation, use the max. parameters for IDD and Rth, and the max. value for VDD from the application. Supply Voltage Below 4.5 V Typically, the sensors operate with supply voltages above 3 V, however, below 4.5 V some characteristics may be outside the specification. Note: The functionality of the sensor below 4.5 V is not tested on regular base. For special test conditions, please contact Micronas. 4.3. Start-up Behavior Due to the active offset compensation, the sensors have an initialization time (enable time ten(O)) after applying the supply voltage. The parameter ten(O) is specified in the Electrical Characteristics (see page 13). During the initialization time, the output state is not defined and the output can toggle. After ten(O), the output will be low if the applied magnetic field B is above BON. The output will be high if B is below BOFF. For magnetic fields between BOFF and BON, the output state of the HAL sensor after applying VDD will be either low or high. In order to achieve a well-defined output state, the applied magnetic field must be above BONmax, respectively, below BOFFmin. For all sensors, the junction temperature range TJ is specified. The maximum ambient temperature TAmax can be calculated as: TAmax = TJmax T 20 Jan. 27, 2012; DSH000017_003EN Micronas HAL 320 DATA SHEET 4.4. EMC and ESD For applications with disturbances on the supply line or radiated disturbances, a series resistor and a capacitor are recommended (see Fig. 4–1). The series resistor and the capacitor should be placed as closely as possible to the HAL sensor. Applications with this arrangement should pass the EMC tests according to the product standard ISO 7637. RV 220 1 VEMC VP 1.2 k RL VDD OUT 3 4.7 nF 20 pF 2 GND Fig. 4–1: Test circuit for EMC investigations Micronas Jan. 27, 2012; DSH000017_003EN 21 HAL 320 DATA SHEET 5. Data Sheet History 1. Final data sheet: “HAL320 Differential Hall Effect – Sensor IC”, July 15, 1998, 6251-439-1DS. First release of the final data sheet. 2. Final data sheet: “HAL320 Differential Hall Effect Sensor IC”, Oct. 19, 2004, 6251-439-2DS. Second release of the final data sheet. Major changes: – temperature ranges “C” and “E” removed – new package diagrams for SOT89B-2 and TO92UA-4 – package diagram for TO92UA-3 added – ammopack diagrams for TO92UA-3/-4 added – new diagram for SOT89B footprint 3. Final data sheet: “HAL320 Differential Hall Effect Sensor IC”, Nov. 25, 2008, DSH000017_002. Third release of the final data sheet. Major changes: – Section 1.5. “Solderability and Welding” updated – package diagrams updated 4. Final data sheet: “Differential Hall-Effect Sensor IC”, Jan. 27, 2012, DSH000017_003EN. Fourth release of the final data sheet. Major changes: – temperature ranges “I” and “C” added Micronas GmbH Hans-Bunte-Strasse 19 D-79108 Freiburg P.O. Box 840 D-79008 Freiburg, Germany Tel. +49-761-517-0 Fax +49-761-517-2174 E-mail: [email protected] Internet: www.micronas.com 22 Jan. 27, 2012; DSH000017_003EN Micronas