APTGT50H60T3G Full - Bridge Trench + Field Stop IGBT® Power Module CR3 CR1 19 Q2 22 7 23 8 CR2 26 Q3 11 10 CR4 Q4 4 27 3 29 31 30 15 32 16 R1 28 27 26 25 20 19 18 23 22 29 16 30 15 31 14 32 13 2 3 4 7 8 10 11 12 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … Features • Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design • High level of integration • Internal thermistor for temperature monitoring Benefits • Stable temperature behavior • Very rugged • Solderable terminals for easy PCB mounting • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Low profile • Each leg can be easily paralleled to achieve a phase leg of twice the current capability • RoHS Compliant Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage TC = 25°C TC = 80°C TC = 25°C Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25°C TJ = 150°C Max ratings 600 80 50 100 ±20 176 100A @ 550V Unit V A June, 2006 Q1 18 Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control V W These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-5 APTGT50H60T3G – Rev 1, 13 14 VCES = 600V IC = 50A @ Tc = 80°C APTGT50H60T3G All ratings @ Tj = 25°C unless otherwise specified ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter Saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, VCE = 600V Tj = 25°C VGE =15V IC = 50A Tj = 150°C VGE = VCE , IC = 600µA VGE = 20V, VCE = 0V Dynamic Characteristics Symbol Characteristic Cies Coes Cres Td(on) Tr Td(off) Tf Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Td(on) Tr Td(off) Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Test Conditions IRM Test Conditions IF DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Er Reverse Recovery Energy Min Typ Max Unit 250 1.9 µA 6.5 600 V nA Max Unit 3150 200 95 110 45 200 40 ns ns 60 0.3 0.43 1.35 1.75 Typ mJ mJ Max 600 VR=600V IF = 50A VGE = 0V IF = 50A VR = 300V di/dt =1800A/µs www.microsemi.com Unit V Tj = 25°C Tj = 150°C Tc = 80°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C V pF 120 50 250 Min Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current 5.0 Inductive Switching (25°C) VGE = ±15V VBus = 300V IC = 50A R G = 8.2Ω Inductive Switching (150°C) VGE = ±15V VBus = 300V IC = 50A R G = 8.2Ω VGE = ±15V Tj = 25°C VBus = 300V Tj = 150°C IC = 50A Tj = 25°C R G = 8.2Ω Tj = 150°C Symbol Characteristic Typ 1.5 1.7 5.8 VGE = 0V VCE = 25V f = 1MHz Reverse diode ratings and characteristics VRRM Min 250 500 50 1.6 1.5 100 150 2.6 5.4 0.6 1.2 µA A 2 V ns June, 2006 Symbol Characteristic µC mJ 2-5 APTGT50H60T3G – Rev 1, Electrical Characteristics APTGT50H60T3G Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.15 K RT = R 25 Max Unit kΩ K Min Typ Max 0.85 1.42 Unit T: Thermistor temperature Symbol Characteristic VISOL TJ TSTG TC Torque Wt Typ 50 3952 1 1 RT : Thermistor value at T exp B 25 / 85 − T25 T Thermal and package characteristics RthJC Min IGBT Diode Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M4 2500 -40 -40 -40 2.5 °C/W V 175 125 100 4.7 110 °C N.m g 12 See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com www.microsemi.com 3-5 APTGT50H60T3G – Rev 1, 28 17 1 June, 2006 SP3 Package outline (dimensions in mm) APTGT50H60T3G Typical Performance Curve Output Characteristics (VGE=15V) Output Characteristics 100 100 T J=25°C VGE=13V TJ=150°C 60 60 VGE=15V 40 40 20 20 TJ=25°C 0 0 0.5 1 1.5 VCE (V) VGE =9V 0 2 2.5 0 3 3.5 60 E (mJ) IC (A) 2.5 40 1 1.5 2 VCE (V) 2.5 VCE = 300V VGE = 15V R G = 8.2Ω TJ = 150°C 3 TJ =25°C 80 0.5 3 3.5 Energy losses vs Collector Current Transfert Characteristics 100 VGE=19V 80 T J=125°C IC (A) IC (A) 80 T J = 150°C Eoff 2 Er 1.5 T J=125°C 1 T J=150°C 20 TJ=25°C 0 0 5 6 7 Eon 0.5 8 9 10 11 0 12 20 40 VGE (V) Switching Energy Losses vs Gate Resistance 3 VCE = 300V VGE =15V IC = 50A TJ = 150°C 2 80 100 Reverse Bias Safe Operating Area 125 Eoff 100 Eon IC (A) E (mJ) 2.5 60 IC (A) 1.5 75 50 1 Er 0.5 VGE=15V T J=150°C R G=8.2Ω 25 Eon 0 0 5 15 25 35 45 55 Gate Resistance (ohms) 65 0 100 200 300 400 VCE (V) 500 600 700 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.6 IGBT 0.9 0.7 June, 2006 0.8 0.5 0.4 0.2 0.3 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration in Seconds www.microsemi.com 4-5 APTGT50H60T3G – Rev 1, Thermal Impedance (°C/W) 1 APTGT50H60T3G Forward Characteristic of diode 100 V CE =300V D=50% RG=8.2Ω T J=150°C 100 ZVS 80 ZCS 60 80 T c=85°C IF (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 120 40 60 T J=125°C 40 TJ =150°C 20 Hard switching 20 T J=25°C 0 0 0 20 40 IC (A) 60 80 0 0.4 0.8 1.2 1.6 V F (V) 2 2.4 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1.4 1.2 1 0.7 0.8 0.5 0.6 0.3 0.4 0.2 Diode 0.9 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 Rectangular Pulse Duration in Seconds 1 10 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5-5 APTGT50H60T3G – Rev 1, June, 2006 Thermal Impedance (°C/W) 1.6