APTGT150H60TG Full - Bridge Trench + Field Stop IGBT® Power Module VCES = 600V IC = 150A @ Tc = 80°C VBUS Q3 G3 G1 E3 OUT2 Q2 Q4 G2 G4 E2 E4 NTC1 NTC2 0/VBU S G3 G4 E3 E4 VBUS 0/VBUS OUT2 OUT1 E1 E2 NTC2 G1 G2 NTC1 Features • Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • High level of integration • Internal thermistor for temperature monitoring Benefits • Stable temperature behavior • Very rugged • Solderable terminals for easy PCB mounting • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Low profile • RoHS compliant Absolute maximum ratings Symbol VCES Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA Reverse Bias Safe Operating Area TC = 25°C Max ratings 600 225 150 350 ±20 480 Tj = 150°C 300A @ 550V TC = 25°C TC = 80°C TC = 25°C Unit V A June, 2006 OUT1 E1 V W These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-5 APTGT150H60TG – Rev 2 Q1 Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control APTGT150H60TG All ratings @ Tj = 25°C unless otherwise specified ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter Saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, VCE = 600V Tj = 25°C VGE =15V IC = 150A Tj = 150°C VGE = VCE , IC = 1.5 mA VGE = 20V, VCE = 0V Dynamic Characteristics Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Test Conditions VGE = 0V VCE = 25V f = 1MHz Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Eon Turn on Energy Eoff Turn off Energy VGE = ±15V VBus = 300V IC = 150A R G = 3.3Ω Reverse diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM Maximum Reverse Leakage Current IF DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Min Test Conditions VR=600V IF = 150A VGE = 0V IF = 150A VR = 300V Reverse Recovery Energy www.microsemi.com 1.5 1.7 5.8 Typ 9200 580 270 115 45 225 Max Unit 250 1.9 µA 6.5 400 V nA Max Unit V pF ns 130 50 ns 300 70 0.85 1.5 4.1 5.3 Min 600 Tj = 25°C Tj = 150°C Tc = 80°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Typ 55 Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C di/dt =3000A/µs Er 5.0 Inductive Switching (25°C) VGE = ±15V VBus = 300V IC = 150A R G = 3.3Ω Inductive Switching (150°C) VGE = ±15V VBus = 300V IC = 150A R G = 3.3Ω Fall Time Tf Min Typ mJ mJ Max 250 500 150 1.6 1.5 130 225 6.9 14.5 1.6 3.5 Unit V µA A 2 V ns µC June, 2006 Symbol Characteristic mJ 2-5 APTGT150H60TG – Rev 2 Electrical Characteristics APTGT150H60TG Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.15 K RT = R 25 Max Unit kΩ K Min Typ Max 0.31 0.52 Unit T: Thermistor temperature Symbol Characteristic VISOL TJ TSTG TC Torque Wt Typ 50 3952 1 1 RT : Thermistor value at T exp B 25 / 85 − T25 T Thermal and package characteristics RthJC Min IGBT Diode Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To Heatsink M5 2500 -40 -40 -40 2.5 °C/W V 175 125 100 4.7 160 °C N.m g ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS : See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com www.microsemi.com 3-5 APTGT150H60TG – Rev 2 June, 2006 SP4 Package outline (dimensions in mm) APTGT150H60TG Typical Performance Curve Output Characteristics (VGE=15V) Output Characteristics 300 300 TJ=25°C T J = 150°C VG E=19V 250 250 VGE=13V 200 TJ =150°C IC (A) IC (A) TJ=125°C 200 150 VGE=15V 150 100 100 50 50 VGE=9V TJ=25°C 0 0 0.5 1 1.5 VCE (V) 0 2 2.5 0 3 10 T J=25°C 250 E (mJ) IC (A) 150 TJ=125°C 2.5 3 3.5 Eoff 6 Er 4 Eon TJ=150°C 50 2 TJ=25°C 0 5 6 7 8 9 0 10 11 0 12 50 100 Switching Energy Losses vs Gate Resistance 12 250 300 Reverse Bias Safe Operating Area Eon 300 Eoff Eoff 250 IF (A) 8 200 350 VCE = 300V VG E =15V I C = 150A T J = 150°C 10 150 IC (A) VGE (V) E (mJ) 1.5 2 VCE (V) VCE = 300V VG E = 15V R G = 3.3Ω T J = 150°C 8 200 100 1 Energy losses vs Collector Current Transfert Characteristics 300 0.5 6 4 150 100 Er 2 200 VGE=15V TJ=150°C RG =3.3Ω 50 Eon 0 0 0 5 10 15 20 Gate Resistance (ohms) 25 0 100 200 300 400 VCE (V) 500 600 700 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.3 0.9 0.25 0.7 0.15 0.1 0.05 0.5 June, 2006 0.2 IGBT 0.3 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration in Seconds www.microsemi.com 4-5 APTGT150H60TG – Rev 2 Thermal Impedance (°C/W) 0.35 APTGT150H60TG Forward Characteristic of diode 300 100 ZCS 80 ZVS VCE=300V D=50% RG=3.3Ω 250 T J=150°C 200 T c=85°C IC (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 120 60 150 T J=125°C 100 40 Hard switching 20 T J=150°C 50 T J=25°C 0 0 0 50 100 IC (A) 150 0 200 0.4 0.8 1.2 1.6 V F (V) 2 2.4 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.6 0.5 0.9 0.4 0.7 0.3 0.5 0.2 0.3 0.1 0.1 0.05 0 0.00001 Diode Single Pulse 0.0001 0.001 0.01 0.1 1 10 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5-5 APTGT150H60TG – Rev 2 June, 2006 Rectangular Pulse Duration in Seconds