1214-300V R1 1214-300V 300 Watts - 50 Volts, 330µs, 10% Radar 1200 - 1400 MHz GENERAL DESCRIPTION The 1214-300V is an internally matched, COMMON BASE transistor capable of providing 300 Watts of pulsed RF output power at three hundred thirty microseconds pulse width, ten percent duty factor across the band 1200 to 1400 MHz. This hermetically solder-sealed transistor is specifically designed for L-Band radar applications. It utilizes gold metallization and diffused emitter ballasting to provide high reliability and supreme ruggedness. CASE OUTLINE 55ST, STYLE 1 ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25oC 420 Watts Maximum Voltage and Current BVces Collector to Emitter Voltage BVebo Emitter to Base Voltage Ic Collector Current Maximum Temperatures Storage Temperature Operating Junction Temperature 75 Volts 3.0 Volts 20 Amps - 65 to + 200oC + 200oC RF ELECTRICAL CHARACTERISTICS @ 25 OC SYMBOL CHARACTERISTICS Pout Pg ηc Rl Droop Flatness VSWR-S VSWR-T Power Out Power Gain Collector Efficiency Input Return loss Droop Flatness Load Mismatch Stability Load Mismatch Tolerance TEST CONDITIONS MIN Freq = 1200 – 1400 MHz Vcc = 50 Volts Pin = 40 Watts 300 8.75 50 10 Pulse Width = 330 µS Duty Factor = 10% TYP MAX UNITS 410 Watts dB % dB dB dB 55 0.5 1. 0 1.5:1 2.5:1 Note: test @ 1.2, 1.3, and 1.4 GHz. FUNCTIONAL CHARACTERISTICS @ 25°°C Bvces Ices θjc1 Collector to Emitter Breakdown Collector to Emitter Leakage Thermal Resistance Ic = 100 mA Vce = 50 Volts Rated Pulse Condition 75 10 0.29 Volts mA o C/W MICROSEMI CORP. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION PLEASE CHECK OUR WEB SITE AT WWW. MICROSEMI.COM OR CONTACT OUR FACTORY DIRECT. Microsemi Corp. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 /869-2324 1214-300V R1 1214-300V Typical Performance Curves: 1214-300V Pin vs. Eff 1214-300V Pin vs. Pout 500 450 70.0 400 60.0 300 1200 MHz 250 1300 MHz 1400 MHz 200 50.0 Eff (%) Pout (W) 350 1300 MHz 1400 Mhz 30.0 150 20.0 100 10.0 50 1200 MHz 40.0 0.0 0 0 10 20 30 40 50 0 60 10 20 30 40 50 Pin (W) Pin (W) 1214-300V Pin vs. Gain 11.0 10.0 9.0 Gain (dB) 8.0 1200 MHz 7.0 1300 MHz 1400 MHz 6.0 5.0 4.0 3.0 0 10 20 30 40 50 60 Pin (W) Impedance Information Freq 1200 1300 1400 Impedance Zl Zs 1.28-j2 4.24-j9.03 1.27-j1.41 2.1-j3.4 1.29-j0.87 1.86-j2.56 Board Material RT 6010.2 LM 25 Mil MICROSEMI CORP. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION PLEASE CHECK OUR WEB SITE AT WWW. MICROSEMI.COM OR CONTACT OUR FACTORY DIRECT. Microsemi Corp. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 /869-2324 60 1214-300V R1 1214-300V BROADBAND TEST CIRCUIT MICROSEMI CORP. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION PLEASE CHECK OUR WEB SITE AT WWW. MICROSEMI.COM OR CONTACT OUR FACTORY DIRECT. Microsemi Corp. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 /869-2324 1214-300V R1 1214-300V MICROSEMI CORP. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION PLEASE CHECK OUR WEB SITE AT WWW. MICROSEMI.COM OR CONTACT OUR FACTORY DIRECT. Microsemi Corp. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 /869-2324