2301 1.5 Watt - 20 Volts, Class C Microwave 2300 MHz GENERAL DESCRIPTION CASE OUTLINE 55 BT- Style 1 The 2301 is a COMMON BASE transistor capable of providing 1.5 Watts Class C, RF output power at 2300 MHz. Gold metalization and diffused ballasting are used to provide high reliability and supreme ruggedness. The transistor uses a fully hermetic High Temperature Solder Sealed package. ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25oC 5.6 Watts Maximum Voltage and Current BVces Collector to Emitter Voltage BVebo Emitter to Base Voltage Ic Collector Current 45 Volts 3.5 Volts 0.3 A Maximum Temperatures Storage Temperature Operating Junction Temperature - 65 to + 200 oC + 200 oC ELECTRICAL CHARACTERISTICS @ 25 OC SYMBOL CHARACTERISTICS Pout Pin Pg Power Out Power Input Power Gain Collector Efficiency Load Mismatch Tolerance ηc VSWR1 BVces BVebo hFE Cob θjc Collector to Emitter Breakdown Emitter to Base Breakdown Current Gain Output Capacitance Thermal Resistance TEST CONDITIONS MIN F = 2.3 GHz Vcb = 20 Volts Po = 1.5 Watts As Above F = 2.3 GHz, Po = 1.5 W 1.5 Ic = 10 mA Ie = 1.0 mA Vce = 5 V, Ic = 100 mA F = 1.0 MHz, Vcb = 22V 45 3.5 10 TYP MAX 0.24 8.0 40 UNITS Watt Watt dB % 30:1 Volts Volts 4.0 31 pF C/W o Issue August 1996 GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY. GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120 2301 August 1996