APT100DL60B(G) APT100DL60S(G) 600V 100A *G Denotes RoHS Compliant, Pb Free Terminal Finish. Ultrasoft Recovery Rectifier Diode (B) PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Ultrasoft Recovery Times (trr) • Soft Switching - High Qrr • Popular TO-247 Package or Surface Mount D3PAK Package • Low Noise Switching - Reduced Ringing • Ultra Low Forward Voltage • Higher Reliability Systems • Low Leakage Current • Minimizes or eliminates snubber • Applications - Induction Heating • Resonant Mode Circuits -ZVS and ZCS Topologies - Phase Shifted Bridge TO - 24 7 D3PAK 1 2 1 2 (S) 2 1 1 - Cathode 2 - Anode Back of Case - Cathode All Ratings: TC = 25°C unless otherwise specified. MAXIMUM RATINGS Symbol VR Characteristic / Test Conditions Ratings Unit 600 Volts Maximum D.C. Reverse Voltage VRRM Maximum Peak Repetitive Reverse Voltage VRWM Maximum Working Peak Reverse Voltage IF(AV) Maximum Average Forward current IF(RMS) RMS Forward Currrent (Square wave, 50% duty) 131 Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3 ms) 600 IFSM TJ, TSTG TL 1 100 (TC = 124°C, Duty Cycle = 0.5) Operating and Storage Junction Temperature Range Amps -55 to 175 °C Lead Temperature for 10 Seconds 300 STATIC ELECTRICAL CHARACTERISTICS VF Characteristic / Test Conditions Forward Voltage IRM Maximum Reverse Leakage Current CT Junction Capacitance, VR = 200V Min Typ Max IF = 100A 1.25 1.6 IF = 200A 2.0 IF = 100A, TJ = 25°C 1.28 Volts VR = 600V 25 VR = 600V, TJ = 125°C 250 μA 97 Microsemi Website - http://www.microsemi.com Unit pF 052-6318 Rev B 6 - 2009 Symbol APT100DL60B_S(G) DYNAMIC CHARACTERISTICS Symbol Characteristic / Test Conditions trr Reverse Recovery Time trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM Maximum Reverse Recovery Current trr Min Typ IF = 1A, diF/dt = -100A/μs, VR = 30V, TJ = 25°C Max Unit 110 ns 487 IF = 100A, diF/dt = -200A/ μs VR = 400V, TC = 25°C 2328 nC 11 Amps 716 ns 5954 nC Reverse Recovery Time IF = 100A, diF/dt = -200A/μs VR = 400V, TC = 125°C Qrr Reverse Recovery Charge IRRM Maximum Reverse Recovery Current 18 Amps trr Reverse Recovery Time 333 ns Qrr Reverse Recovery Charge 10002 nC IRRM Maximum Reverse Recovery Current 49 Amps IF = 100A, diF/dt = -1000A/ μs VR = 400V, TC = 125°C THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic / Test Conditions RθJC Junction-to-Case Thermal Resistance WT Min Typ Max Unit 0.34 °C/W 0.22 oz 5.9 g Package Weight Torque 10 lb·in 1.1 N·m Maximum Mounting Torque 1 Continuous current limited by package lead temperature. Microsemi reserves the right to change, without notice, the specifications and information contained herein. 0.35 0.30 0.25 0.20 Note: 0.15 0.10 t1 t2 t Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC 0.05 0 052-6318 Rev B 6 - 2009 PDM ZθJC, THERMAL IMPEDANCE (°C/W) 0.40 10-5 10-4 1.0 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (seconds) FIGURE 1. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION APT100DL60B_S(G) TYPICAL PERFORMANCE CURVES 250 1000 225 TJ= 55°C 175 TJ= 150°C TJ= 25°C 150 125 100 75 50 25 0 0 0.5 1 1.5 2 R 100A 10000 50A 6000 4000 2000 0 0 200 400 600 800 1000 600 200A 400 200 0 0 200 400 600 800 1000 -diF/dt, CURRENT RATE OF CHANGE (A/μs) FIGURE 3, Reverse Recovery Time vs. Current Rate of Change 70 60 T = 125°C J V = 400V 200A R 50 40 100A 30 20 50A 10 0 0 200 400 600 800 1000 -diF/dt, CURRENT RATE OF CHANGE (A/μs) FIGURE 5, Reverse Recovery Current vs. Current Rate of Change 400 350 1.0 300 tRR 0.5 IRRM IF(AV) (A) 0.4 QRR 250 200 150 0.3 100 0.2 0 50 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 6, Dynamic Parameters vs Junction Temperature 1000 0 25 50 75 100 125 150 Case Temperature (°C) FIGURE 7, Maximum Average Forward Current vs. Case Temperature 900 800 700 600 500 400 300 200 100 0 1 10 100 400 VR, REVERSE VOLTAGE (V) FIGURE 8, Junction Capacitance vs. Reverse Voltage 052-6318 Rev B 6 - 2009 Kf, DYNAMIC PARAMETERS (Normalized to 1000A/μs) -diF/dt, CURRENT RATE OF CHANGE (A/μs) FIGURE 4, Reverse Recovery Charge vs. Current Rate of Change 1. 2 CJ, JUNCTION CAPACITANCE (pF) 100A 50A IRRM, REVERSE RECOVERY CURRENT (A) V = 400V 8000 800 2.5 VF, ANODE-TO-CATHODE VOLTAGE (V) FIGURE 2, Forward Current vs. Forward Voltage 14000 T = 125°C 200A J 12000 trr, COLLECTOR CURRENT (A) IF, FORWARD CURRENT (A) R TJ= 125°C 200 Qrr, REVERSE RECOVERY CHARGE (nC) T = 125°C J V = 400V APT100DL60B_S(G) Vr diF /dt Adjust +18V 0V D.U.T. trr/Qrr Waveform CURRENT TRANSFORMER Figure 9. Diode Test Circuit 1 IF - Forward Conduction Current 2 diF /dt - Rate of Diode Current Change Through Zero Crossing. 3 IRRM - Maximum Reverse Recovery Current. 4 trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. 1 4 6 Zero 5 5 Qrr - Area Under the Curve Defined by IRRM and trr. 6 diM/dt - Maximum Rate of Current Increase During the Trailing Portion of trr. 0.25 IRRM 3 Slope = diM/dt 2 Figure 10, Diode Reverse Recovery Waveform and Definitions 3 D PAK Package Outline TO-247 Package Outline e1 SAC: Tin, Silver, Copper 15.49 (.610) 16.26 (.640) Cathode 6.15 (.242) BSC 5.38 (.212) 6.20 (.244) 4.90 (.193) 5.10 (.201) 1.45 (.057) 1.60 (.063) 15.85 (.624) 16.05(.632) 1.00 (.039) 1.15(.045) 20.80 (.819) 21.46 (.845) 0.40 (.016) 0.65 (.026) 0.40 (.016) 0.79 (.031) 1.65 (.065) 2.13 (.084) 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055) 0.020 (.001) 0.250 (.010) 2.70 (.106) 2.90 (.114) 1.15 (.045) 1.45 (.057) 1.20 (.047) 1.90 (.075) 1.40 (.055) 2.10 (.083) 5.45 (.215) BSC (2 Plcs.) Anode 2.21 (.087) 2.59 (.102) Cathode 10.90 (.430) BSC Dimensions in Millimeters and (Inches) 13.30 (.524) 13.60(.535) 12.40 (.488) 12.70 (.500) 18.70 (.736) 19.10 (.752) 3.50 (.138) 3.81 (.150) 4.50 (.177) Max. 052-6318 Rev B 6 - 2009 Cathode (Heat Sink) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) e1 100% Sn 2.40 (.094) 2.70 (.106) (Base of Lead) Heat Sink (Cathode) and Leads are Plated Anode Cathode Dimensions in Millimeters (Inches) Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.