MICROSEMI APT100DL60BG

APT100DL60B(G)
APT100DL60S(G)
600V 100A
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Ultrasoft Recovery Rectifier Diode
(B)
PRODUCT APPLICATIONS
PRODUCT FEATURES
PRODUCT BENEFITS
• Anti-Parallel Diode
-Switchmode Power Supply
-Inverters
• Ultrasoft Recovery Times (trr)
• Soft Switching - High Qrr
• Popular TO-247 Package or
Surface Mount D3PAK Package
• Low Noise Switching
- Reduced Ringing
• Ultra Low Forward Voltage
• Higher Reliability Systems
• Low Leakage Current
• Minimizes or eliminates
snubber
• Applications
- Induction Heating
• Resonant Mode Circuits
-ZVS and ZCS Topologies
- Phase Shifted Bridge
TO
- 24
7
D3PAK
1
2
1
2
(S)
2
1
1 - Cathode
2 - Anode
Back of Case - Cathode
All Ratings: TC = 25°C unless otherwise specified.
MAXIMUM RATINGS
Symbol
VR
Characteristic / Test Conditions
Ratings
Unit
600
Volts
Maximum D.C. Reverse Voltage
VRRM
Maximum Peak Repetitive Reverse Voltage
VRWM
Maximum Working Peak Reverse Voltage
IF(AV)
Maximum Average Forward current
IF(RMS)
RMS Forward Currrent (Square wave, 50% duty)
131
Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3 ms)
600
IFSM
TJ, TSTG
TL
1
100
(TC = 124°C, Duty Cycle = 0.5)
Operating and Storage Junction Temperature Range
Amps
-55 to 175
°C
Lead Temperature for 10 Seconds
300
STATIC ELECTRICAL CHARACTERISTICS
VF
Characteristic / Test Conditions
Forward Voltage
IRM
Maximum Reverse Leakage Current
CT
Junction Capacitance, VR = 200V
Min
Typ
Max
IF = 100A
1.25
1.6
IF = 200A
2.0
IF = 100A, TJ = 25°C
1.28
Volts
VR = 600V
25
VR = 600V, TJ = 125°C
250
μA
97
Microsemi Website - http://www.microsemi.com
Unit
pF
052-6318 Rev B 6 - 2009
Symbol
APT100DL60B_S(G)
DYNAMIC CHARACTERISTICS
Symbol
Characteristic / Test Conditions
trr
Reverse Recovery Time
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
Maximum Reverse Recovery Current
trr
Min
Typ
IF = 1A, diF/dt = -100A/μs, VR = 30V, TJ = 25°C
Max
Unit
110
ns
487
IF = 100A, diF/dt = -200A/
μs VR = 400V, TC = 25°C
2328
nC
11
Amps
716
ns
5954
nC
Reverse Recovery Time
IF = 100A, diF/dt = -200A/μs
VR = 400V, TC = 125°C
Qrr
Reverse Recovery Charge
IRRM
Maximum Reverse Recovery Current
18
Amps
trr
Reverse Recovery Time
333
ns
Qrr
Reverse Recovery Charge
10002
nC
IRRM
Maximum Reverse Recovery Current
49
Amps
IF = 100A, diF/dt = -1000A/
μs VR = 400V, TC = 125°C
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
Characteristic / Test Conditions
RθJC
Junction-to-Case Thermal Resistance
WT
Min
Typ
Max
Unit
0.34
°C/W
0.22
oz
5.9
g
Package Weight
Torque
10
lb·in
1.1
N·m
Maximum Mounting Torque
1 Continuous current limited by package lead temperature.
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
0.35
0.30
0.25
0.20
Note:
0.15
0.10
t1
t2
t
Duty Factor D = 1/t2
Peak TJ = PDM x ZθJC + TC
0.05
0
052-6318 Rev B 6 - 2009
PDM
ZθJC, THERMAL IMPEDANCE (°C/W)
0.40
10-5
10-4
1.0
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (seconds)
FIGURE 1. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
APT100DL60B_S(G)
TYPICAL PERFORMANCE CURVES
250
1000
225
TJ= 55°C
175
TJ= 150°C
TJ= 25°C
150
125
100
75
50
25
0
0
0.5
1
1.5
2
R
100A
10000
50A
6000
4000
2000
0
0
200
400
600
800
1000
600
200A
400
200
0
0
200
400
600
800
1000
-diF/dt, CURRENT RATE OF CHANGE (A/μs)
FIGURE 3, Reverse Recovery Time vs. Current Rate of Change
70
60
T = 125°C
J
V = 400V
200A
R
50
40
100A
30
20
50A
10
0
0
200
400
600
800
1000
-diF/dt, CURRENT RATE OF CHANGE (A/μs)
FIGURE 5, Reverse Recovery Current vs. Current Rate of Change
400
350
1.0
300
tRR
0.5
IRRM
IF(AV) (A)
0.4
QRR
250
200
150
0.3
100
0.2
0
50
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 6, Dynamic Parameters vs Junction Temperature
1000
0
25
50
75
100
125
150
Case Temperature (°C)
FIGURE 7, Maximum Average Forward Current vs. Case Temperature
900
800
700
600
500
400
300
200
100
0
1
10
100
400
VR, REVERSE VOLTAGE (V)
FIGURE 8, Junction Capacitance vs. Reverse Voltage
052-6318 Rev B 6 - 2009
Kf, DYNAMIC PARAMETERS
(Normalized to 1000A/μs)
-diF/dt, CURRENT RATE OF CHANGE (A/μs)
FIGURE 4, Reverse Recovery Charge vs. Current Rate of Change
1. 2
CJ, JUNCTION CAPACITANCE (pF)
100A
50A
IRRM, REVERSE RECOVERY CURRENT
(A)
V = 400V
8000
800
2.5
VF, ANODE-TO-CATHODE VOLTAGE (V)
FIGURE 2, Forward Current vs. Forward Voltage
14000
T = 125°C
200A
J
12000
trr, COLLECTOR CURRENT (A)
IF, FORWARD CURRENT (A)
R
TJ= 125°C
200
Qrr, REVERSE RECOVERY CHARGE
(nC)
T = 125°C
J
V = 400V
APT100DL60B_S(G)
Vr
diF /dt Adjust
+18V
0V
D.U.T.
trr/Qrr
Waveform
CURRENT
TRANSFORMER
Figure 9. Diode Test Circuit
1
IF - Forward Conduction Current
2
diF /dt - Rate of Diode Current Change Through Zero Crossing.
3
IRRM - Maximum Reverse Recovery Current.
4
trr - Reverse Recovery Time, measured from zero crossing where diode
current goes from positive to negative, to the point at which the straight
line through IRRM and 0.25 IRRM passes through zero.
1
4
6
Zero
5
5
Qrr - Area Under the Curve Defined by IRRM and trr.
6
diM/dt - Maximum Rate of Current Increase During the Trailing Portion of trr.
0.25 IRRM
3
Slope = diM/dt
2
Figure 10, Diode Reverse Recovery Waveform and Definitions
3
D PAK Package Outline
TO-247 Package Outline
e1 SAC: Tin, Silver, Copper
15.49 (.610)
16.26 (.640)
Cathode
6.15 (.242) BSC
5.38 (.212)
6.20 (.244)
4.90 (.193)
5.10 (.201)
1.45 (.057)
1.60 (.063)
15.85 (.624)
16.05(.632)
1.00 (.039)
1.15(.045)
20.80 (.819)
21.46 (.845)
0.40 (.016)
0.65 (.026)
0.40 (.016)
0.79 (.031)
1.65 (.065)
2.13 (.084)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
0.020 (.001)
0.250 (.010)
2.70 (.106)
2.90 (.114)
1.15 (.045)
1.45 (.057)
1.20 (.047)
1.90 (.075) 1.40 (.055)
2.10 (.083)
5.45 (.215) BSC
(2 Plcs.)
Anode
2.21 (.087)
2.59 (.102)
Cathode
10.90 (.430) BSC
Dimensions in Millimeters and (Inches)
13.30 (.524)
13.60(.535)
12.40 (.488)
12.70 (.500)
18.70 (.736)
19.10 (.752)
3.50 (.138)
3.81 (.150)
4.50 (.177) Max.
052-6318 Rev B 6 - 2009
Cathode
(Heat Sink)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
e1 100% Sn
2.40 (.094)
2.70 (.106)
(Base of Lead)
Heat Sink (Cathode)
and Leads
are Plated
Anode
Cathode
Dimensions in Millimeters (Inches)
Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583
4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. US and Foreign patents pending. All Rights Reserved.