650V
94A
APT94N65B2C3
APT94N65B2C3G*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
COOLMOS
Super Junction MOSFET
Power Semiconductors
T-MaxTM
• Ultra Low RDS(ON)
• Low Miller Capacitance
• Ultra Low Gate Charge, Qg
• Avalanche Energy Rated
D
• Extreme dv/dt Rated
• Dual die (parallel)
G
• Popular T-MAX Package
S
Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with
two parallel MOSFET die. It is intended for switch-mode operation. It is not suitable for linear mode operation.
All Ratings per die: TC = 25°C unless otherwise specified.
MAXIMUM RATINGS
APT94N65B2C3S(G)
UNIT
Drain-Source Voltage
650
Volts
Continuous Drain Current @ TC = 25°C
94
Continuous Drain Current @ TC = 100°C
60
Symbol Parameter
VDSS
ID
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
20
Volts
Total Power Dissipation @ TC = 25°C
415
Watts
PD
1
282
TJ,TSTG Operating and Storage Junction Temperature Range
TL
dv/
dt
Drain-Source Voltage slope (VDS = 480V, ID = 94A, TJ = 125°C)
50
V/ns
7
Amps
2
Avalanche Current
EAR
Repetitive Avalanche Energy
( Id = 7A, Vdd = 50V )
1
( Id = 3.5A, Vdd = 50V )
1800
2
Single Pulse Avalanche Energy
°C
260
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
EAS
-55 to 150
mJ
STATIC ELECTRICAL CHARACTERISTICS
BV(DSS)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 500μA)
RDS(on)
IDSS
IGSS
VGS(th)
Drain-Source On-State Resistance
MIN
3
TYP
MAX
Volts
650
(VGS = 10V, ID = 60A)
0.03
0.035
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V)
1.0
50
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V, TC = 150°C)
100
Gate-Source Leakage Current (VGS = ±20V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 5.8mA)
2.1
UNIT
Ohms
μA
±200
nA
3.9
Volts
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
"COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG."
Microsemi Website - http://www.microsemi.com
3-2009
Characteristic / Test Conditions
050-8069 Rev B
Symbol
APT94N65B2C3(G)
DYNAMIC CHARACTERISTICS
Symbol
Characteristic
Input Capacitance
Coss
VGS = 0V
Output Capacitance
VDS = 25V
Reverse Transfer Capacitance
f = 1 MHz
Crss
Qg
Qgs
4
VGS = 10V
Gate-Source Charge
VDD = 300V
Total Gate Charge
Qgd
Gate-Drain ("Miller ") Charge
td(on)
Turn-on Delay Time
tr
td(off)
tf
MIN
Test Conditions
Ciss
TYP
13940
5200
INDUCTIVE SWITCHING
VGS = 15V
VDD = 400V
Turn-off Delay Time
ID = 94A @ 25°C
RG = 4.3Ω
167
5
INDUCTIVE SWITCHING @ 25°C
VDD = 400V, VGS = 15V
2684
ID = 94A, RG = 4.3Ω
4448
5
INDUCTIVE SWITCHING @ 125°C
VDD = 400V, VGS = 15V
3391
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
UNIT
pF
229
580
72
234
32
59
498
ID = 94A @ 25°C
Rise Time
MAX
nC
ns
μJ
5082
ID = 94A, RG = 4.3Ω
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
IS
Pulsed Source Current
1
VSD
Diode Forward Voltage
3
/dt
t rr
Q rr
IRRM
TYP
Peak Diode Recovery
dv
(Body Diode)
/dt
MAX
47
Continuous Source Current (Body Diode)
ISM
dv
MIN
Characteristic / Test Conditions
UNIT
Amps
141
(VGS = 0V, IS = -94A)
0.9
50
6
Reverse Recovery Time
1.2
Volts
V/ns
Tj = 25°C
960
Tj = 125°C
1271
(IS = -94A, /dt = 100A/μs)
Tj = 25°C
31
μC
Tj = 125°C
Peak Recovery Current
Tj = 25°C
43
58
56
Amps
di
(IS = -94A, /dt = 100A/μs)
Reverse Recovery Charge
di
(IS = -94A, di/dt = 100A/μs)
Tj = 125°C
ns
THERMAL CHARACTERISTICS
Symbol
Characteristic
RθJC
Junction to Case
RθJA
Junction to Ambient
MIN
TYP
MAX
0.15
31
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Repetitive avalanche causes additional power losses that can
be calculated as PAV = EAR*f . Pulse width tp limited by Tj max.
3 Pulse Test: Pulse width < 380 μs, Duty Cycle < 2%
4 See MIL-STD-750 Method 3471
5 Eon includes diode reverse recovery.
6 Maximum 125°C diode commutation speed = di/dt 600A/μs
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
D = 0.9
0.14
0.12
0.7
0.10
0.5
0.08
Note:
0.06
PDM
ZθJC, THERMAL IMPEDANCE (°C/W)
050-8069 Rev B
3-2009
0.16
0.3
0.04
t1
t2
t
Duty Factor D = 1/t2
Peak TJ = PDM x ZθJC + TC
0.1
0.02
SINGLE PULSE
0.05
0
10
-5
10
-4
10-3
10-2
RECTANGULAR PULSE DURATION (SECONDS)
Figure 1, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
0.1
UNIT
°C/W
APT94N65B2C3(G)
Typical Performance Curves
250
TJ (°C)
10 &15V
6.5V
TC (°C)
0.0618
0.0885
0.0230
0.436
ZEXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
IC, DRAIN CURRENT (A)
Dissipated Power
(Watts)
ZEXT
200
6V
150
5.5V
100
5V
50
4.5V
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
4V
0
0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 11, Low Voltage Output Characteristics
1.4
160
VDS> ID (ON) x RDS (ON)MAX.
250μSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
140
NORMALIZED TO
V
GS
1.3
= 10V @ 47A
1.2
100
IDR, REVERSE
60
40
TJ= 25°C
20
TJ= -55°C
TJ= 125°C
0
0
1
2
3
4
5
6
7
8
VGS, GATE-TO-SOURCE VOLTAGE (V)
FIGURE 12, Transfer Characteristics
ID, DRAIN CURRENT (A)
90
80
70
60
50
40
30
20
10
25
50
75
100
125
0.9
0.8
150
40
80
120
160
200
ID, DRAIN CURRENT (A)
FIGURE 13, RDS(ON) vs Drain Current
.05
1
.95
0.
-50
0
50
100
150
TJ, Junction Temperature (°C)
FIGURE 7, Breakdown Voltage vs Temperature
1.2
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
3.0
RDS(ON), DRAIN-TO-SOURCE ON
RESISTANCE (NORMALIZED)
0
1. 1
TC, CASE TEMPERATURE (C°)
FIGURE 6, Maximum Drain Current vs Case Temperature
2.5
2.0
1.5
1
0.5
0
VGS = 20V
1
.15
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
100
0
VGS = 10V
1.1
80
-50
0
50
100
150
TJ, JUNCTION TEMPERATURE (C°)
FIGURE 8, On-Resistance vs Temperature
1.1
1
0.9
0.8
0.7
0.6
-50
0
50
100
150
TC, Case Temperature (°C)
FIGURE 9, Threshold Voltage vs Temperature
050-8069 Rev B 3-2009
ID, DRAIN CURRENT (A)
120
APT94N65B2C3(G)
Typical Performance Curves
60,000
Ciss
C, CAPACITANCE (pF)
ID, DRAIN CURRENT (A)
10,000
GRAPH REMOVED
1,000
Coss
10
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 10, Maximum Safe Operating Area
I = 94A
D
10
8
VDS= 300V
VDS= 480V
6
0
100
4
2
1
200
400
600
800
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, Gate Charges vs Gate-To-Source Voltage
700
0.5
0.7
0.9
1.1
1.3
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (V)
FIGURE 13, Source-Drain Diode Forward Voltage
00
R
500
G
= 400V
= 5W
T = 125°C
J
L = 100μH
tf
00
V
400
DD
R
G
tr, and tf (ns)
td(on) and td(off) (ns)
50
td(off)
= 400V
= 5W
T = 125°C
J
L = 100μH
300
200
50
00
tr
50
100
td(on)
0
40
80
120
0
160
0
12000
V
DD
R
10000
G
18000
= 400V
V
DD
= 5W
J
Eoff
L = 100μH
EON includes
diode reverse recovery.
6000
4000
Eon
2000
SWITCHING ENERGY (uJ)
T = 125°C
8000
40
80
120
160
ID (A)
FIGURE 15 , Rise and Fall Times vs Current
ID (A)
FIGURE 14, Delay Times vs Current
SWITCHING ENERGY (μJ)
600
0.3
DD
3-2009
500
10
V
050-8069 Rev B
400
TJ = =25°C
0
0
300
TJ= +150°C
0
600
200
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 11, Capacitance vs Drain-To-Source Voltage
100
IDR, REVERSE DRAIN CURRENT (A)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
12
Crss
100
= 400V
16000
I = 94A
14000
T = 125°C
J
L = 100μH
D
Eoff
EON includes
12000
diode reverse recovery.
10000
8000
6000
Eon
4000
2000
0
0
25
50
75
100
125 150
ID (A)
FIGURE 16, Switching Energy vs Current
0
0
10
20
30
40
50
RG, GATE RESISTANCE (Ohms)
FIGURE 17, Switching Energy vs Gate Resistance
APT94N65B2C3(G)
Typical Performance Curves
Gate Voltage
10%
T
90%
Gate Voltage
TJ = 125 C
TJ = 125 C
td(on)
td(off)
tr
Collector Current
Collector Current
tf
90%
90%
5%
5%
10%
Collector Voltage
0
10%
Collector Voltage
Switching Energy
Switching Energy
Figure 19, Turn-off Switching Waveforms and Definitions
Figure 18, Turn-on Switching Waveforms and Definitions
APT30DF60
V DD
IC
V CE
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
T-MAX® (B2) Package Outline
e1 100% Sn Plated
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
Gate
Drain
Source
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583
4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-8069 Rev B 3-2009
Drain
20.80 (.819)
21.46 (.845)