2N6796, 2N6798, 2N6800, 2N6802 Qualified Levels: JAN, JANTX, JANTXV and JANS* N-CHANNEL MOSFET Available on commercial versions Qualified per MIL-PRF-19500/557 DESCRIPTION This family of switching transistors is military qualified up to the JANTXV level for highreliability applications. The 2N6798 part number is also qualified to the JANS level. These devices are also available in a low profile U-18 LCC surface mount package. Microsemi also offers numerous other transistor products to meet higher and lower power ratings with various switching speed requirements in both through-hole and surface-mount packages. Important: For the latest information, visit our website http://www.microsemi.com. FEATURES • JEDEC registered 2N6796, 2N6798, 2N6800 and 2N6802 number series. • JAN, JANTX, and JANTXV qualifications are available per MIL-PRF-19500/557. *JANS qualification is available on 2N6798 only. (See part nomenclature for all available options.) • TO-205AF (TO-39) Package RoHS compliant versions available (commercial grade only). APPLICATIONS / BENEFITS • • Also available in: Lightweight top-hat design with flexible terminals offers a variety of mounting flexibility. Military and other high-reliability applications. U-18 LCC package (surface mount) 2N6796U, 2N6798U, 2N6800U & 2N6802U MAXIMUM RATINGS @ T A = +25 ºC unless otherwise stated Parameters / Test Conditions Operating & Storage Junction Temperature Range Thermal Resistance Junction-to-Case Total Power Dissipation @ T A = +25 °C (1) @ T C = +25 °C Drain-Source Voltage, dc 2N6796 2N6798 2N6800 2N6802 Gate-Source Voltage, dc (2) Drain Current, dc @ T C = +25 ºC 2N6796 2N6798 2N6800 2N6802 (2) Drain Current, dc @ T C = +100 ºC 2N6796 2N6798 2N6800 2N6802 (3) Off-State Current (Peak Total Value) 2N6796 2N6798 2N6800 2N6802 Source Current 2N6796 2N6798 2N6800 2N6802 Symbol Value T J & T stg R ӨJC -55 to +150 5.0 0.8 25 100 200 400 500 ± 20 8.0 5.5 3.0 2.5 5.0 3.5 2.0 1.5 32 22 14 11 8.0 5.5 3.0 2.5 PT V DS V GS I D1 I D2 I DM IS Unit o °C C/W W V V A A A (pk) MSC – Lawrence 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 or (978) 620-2600 Fax: (978) 689-0803 MSC – Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 A Website: www.microsemi.com See notes on next page. T4-LDS-0047, Rev. 3 (121483) ©2012 Microsemi Corporation Page 1 of 9 2N6796, 2N6798, 2N6800, 2N6802 Notes: 1. Derate linearly 0.2 W/°C for T C > +25 °C. 2. The following formula derives the maximum theoretical I D limit. I D is also limited by package and internal wires and may be limited due to pin diameter. 3. I DM = 4 x I D1 as calculated in note 2. MECHANICAL and PACKAGING • • • • • CASE: Hermetically sealed, kovar base, nickel cap. TERMINALS: Tin/lead solder dip nickel plate or RoHS compliant pure tin plate (commercial grade only). MARKING: Part number, date code, manufacturer’s ID. WEIGHT: Approximately 1.064 grams. See Package Dimensions on last page. PART NOMENCLATURE JAN 2N6796 (e3) Reliability Level JAN = JAN Level JANTX = JANTX Level JANTXV = JANTXV Level JANS = JANS level (2N6798) Blank = Commercial RoHS Compliance e3 = RoHS compliant (available on commercial grade only) Blank = non-RoHS compliant JEDEC type number (see Electrical Characteristics table) Symbol di/dt IF RG V DD V DS V GS SYMBOLS & DEFINITIONS Definition Rate of change of diode current while in reverse-recovery mode, recorded as maximum value. Forward current Gate drive impedance Drain supply voltage Drain source voltage, dc Gate source voltage, dc T4-LDS-0047, Rev. 3 (121483) ©2012 Microsemi Corporation Page 2 of 9 2N6796, 2N6798, 2N6800, 2N6802 ELECTRICAL CHARACTERISTICS @ T A = +25 °C, unless otherwise noted Parameters / Test Conditions OFF CHARACTERISTICS Drain-Source Breakdown Voltage 2N6796 2N6798 2N6800 2N6802 V GS = 0 V, I D = 1.0 mA Gate-Source Voltage (Threshold) V DS ≥ V GS , I D = 0.25 mA V DS ≥ V GS , I D = 0.25 mA, T J = +125°C V DS ≥ V GS , I D = 0.25 mA, T J = -55°C Gate Current V GS = ± 20 V, V DS = 0 V V GS = ± 20 V, V DS = 0 V, T J = +125°C Symbol Min. V (BR)DSS 100 200 400 500 V GS(th)1 V GS(th)2 V GS(th)3 2.0 1.0 Max. Unit V 4.0 V 5.0 I GSS1 I GSS2 ±100 ±200 nA Drain Current V GS = 0 V, V DS V GS = 0 V, V DS V GS = 0 V, V DS V GS = 0 V, V DS = 80 V = 160 V = 320 V = 400 V 2N6796 2N6798 2N6800 2N6802 I DSS1 25 µA Drain Current V GS = 0 V, V DS V GS = 0 V, V DS V GS = 0 V, V DS V GS = 0 V, V DS = 80 V, T J = +125 °C = 160 V, T J = +125 °C = 320 V, T J = +125 °C = 400 V, T J = +125 °C 2N6796 2N6798 2N6800 2N6802 I DSS2 0.25 mA Static Drain-Source On-State Resistance V GS = 10 V, I D = 5.0 A pulsed V GS = 10 V, I D = 3.5 A pulsed V GS = 10 V, I D = 2.0 A pulsed V GS = 10 V, I D = 1.5 A pulsed 2N6796 2N6798 2N6800 2N6802 Static Drain-Source On-State Resistance V GS = 10 V, I D = 8.0 A pulsed V GS = 10 V, I D = 5.5 A pulsed V GS = 10 V, I D = 3.0 A pulsed V GS = 10 V, I D = 2.5 A pulsed 2N6796 2N6798 2N6800 2N6802 Static Drain-Source On-State Resistance T J = +125°C V GS = 10 V, I D = 5.0 A pulsed V GS = 10 V, I D = 3.5 A pulsed V GS = 10 V, I D = 2.0 A pulsed V GS = 10 V, I D = 1.5 A pulsed 2N6796 2N6798 2N6800 2N6802 Diode Forward Voltage V GS = 0 V, I D = 8.0 A pulsed V GS = 0 V, I D = 5.5 A pulsed V GS = 0 V, I D = 3.0 A pulsed V GS = 0 V, I D = 2.5 A pulsed 2N6796 2N6798 2N6800 2N6802 T4-LDS-0047, Rev. 3 (121483) ©2012 Microsemi Corporation r DS(on)1 r DS(on)2 r DS(on)3 V SD 0.18 0.40 1.00 1.50 0.195 0.420 1.100 1.600 0.35 0.75 2.40 3.50 1.5 1.4 1.4 1.4 Ω Ω Ω V Page 3 of 9 2N6796, 2N6798, 2N6800, 2N6802 ELECTRICAL CHARACTERISTICS @ T A = +25 °C, unless otherwise noted (continued) DYNAMIC CHARACTERISTICS Parameters / Test Conditions Gate Charge: On-State Gate Charge V GS = 10 V, I D = 8.0 A, V DS = 50 V V GS = 10 V, I D = 5.5 A, V DS = 50 V V GS = 10 V, I D = 3.0 A, V DS = 50 V V GS = 10 V, I D = 2.5 A, V DS = 50 V Symbol 2N6796 2N6798 2N6800 2N6802 Gate to Source Charge V GS = 10 V, I D = 8.0 A, V DS V GS = 10 V, I D = 5.5 A, V DS V GS = 10 V, I D = 3.0 A, V DS V GS = 10 V, I D = 2.5 A, V DS = 50 V = 50 V = 50 V = 50 V 2N6796 2N6798 2N6800 2N6802 Gate to Drain Charge V GS = 10 V, I D = 8.0 A, V DS V GS = 10 V, I D = 5.5 A, V DS V GS = 10 V, I D = 3.0 A, V DS V GS = 10 V, I D = 2.5 A, V DS = 50 V = 50 V = 50 V = 50 V 2N6796 2N6798 2N6800 2N6802 Min. Max. Unit Q g(on) 28.51 42.07 34.75 33.00 nC Q gs 6.34 5.29 5.75 4.46 nC Q gd 16.59 28.11 16.59 28.11 nC Max. Unit t d(on) 30 ns tr 75 50 35 30 ns t d(off) 40 50 55 55 ns tf 45 40 35 30 ns t rr 300 500 700 900 ns SWITCHING CHARACTERISTICS Parameters / Test Conditions Symbol Turn-on delay time I D = 8.0 A, V GS = +10 V, R G I D = 5.5 A, V GS = +10 V, R G I D = 3.0 A, V GS = +10 V, R G I D = 2.5 A, V GS = +10 V, R G = 7.5 Ω, V DD = 7.5 Ω, V DD = 7.5 Ω, V DD = 7.5 Ω, V DD = 30 V = 77 V = 176 V = 225 V 2N6796 2N6798 2N6800 2N6802 Rinse time I D = 8.0 A, V GS I D = 5.5 A, V GS I D = 3.0 A, V GS I D = 2.5 A, V GS = +10 V, R G = +10 V, R G = +10 V, R G = +10 V, R G = 7.5 Ω, V DD = 7.5 Ω, V DD = 7.5 Ω, V DD = 7.5 Ω, V DD = 30 V = 77 V = 176 V = 225 V 2N6796 2N6798 2N6800 2N6802 Turn-off delay time I D = 8.0 A, V GS = +10 V, R G I D = 5.5 A, V GS = +10 V, R G I D = 3.0 A, V GS = +10 V, R G I D = 2.5 A, V GS = +10 V, R G = 7.5 Ω, V DD = 7.5 Ω, V DD = 7.5 Ω, V DD = 7.5 Ω, V DD = 30 V = 77 V = 176 V = 225 V 2N6796 2N6798 2N6800 2N6802 Fall time I D = 8.0 A, V GS I D = 5.5 A, V GS I D = 3.0 A, V GS I D = 2.5 A, V GS = 7.5 Ω, V DD = 7.5 Ω, V DD = 7.5 Ω, V DD = 7.5 Ω, V DD = 30 V = 77 V = 176 V = 225 V 2N6796 2N6798 2N6800 2N6802 = +10 V, R G = +10 V, R G = +10 V, R G = +10 V, R G Diode Reverse Recovery Time di/dt ≤ 100 A/µs, V DD ≤ 50 V, I F di/dt ≤ 100 A/µs, V DD ≤ 50 V, I F di/dt ≤ 100 A/µs, V DD ≤ 50 V, I F di/dt ≤ 100 A/µs, V DD ≤ 50 V, I F T4-LDS-0047, Rev. 3 (121483) = 8.0 A = 5.5 A = 3.0 A = 2.5 A 2N6796 2N6798 2N6800 2N6802 ©2012 Microsemi Corporation Min. Page 4 of 9 2N6796, 2N6798, 2N6800, 2N6802 THERMAL RESPONSE (ZӨJC) GRAPHS t 1 , RECTANGLE PULSE DURATION (seconds) FIGURE 1 – Normalized Transient Thermal Impedance T4-LDS-0047, Rev. 3 (121483) ©2012 Microsemi Corporation Page 5 of 9 2N6796, 2N6798, 2N6800, 2N6802 GRAPHS (continued) ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) FIGURE 2 – Maximum Drain Current versus Case Temperature Graphs T C , CASE TEMPERATURE (°C) For 2N6798 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) T C , CASE TEMPERATURE (°C) For 2N6796 T C , CASE TEMPERATURE (°C) 2N6800 T4-LDS-0047, Rev. 3 (121483) ©2012 Microsemi Corporation T C , CASE TEMPERATURE (°C) 2N6802 Page 6 of 9 2N6796, 2N6798, 2N6800, 2N6802 GRAPHS (continued) ID, DRAIN CURRENT (AMPERES) FIGURE 3 – Maximum Safe Operating Area ID, DRAIN CURRENT (AMPERES) V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS) FOR 2N6796 V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS) FOR 2N6798 T4-LDS-0047, Rev. 3 (121483) ©2012 Microsemi Corporation Page 7 of 9 2N6796, 2N6798, 2N6800, 2N6802 GRAPHS (continued) ID, DRAIN CURRENT (AMPERES) FIGURE 3 – Maximum Safe Operating Area (continued) ID, DRAIN-TO-SOURCE- CURRENT (AMPERES) V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS) FOR 2N6880 V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS) FOR 2N6802 T4-LDS-0047, Rev. 3 (121483) ©2012 Microsemi Corporation Page 8 of 9 2N6796, 2N6798, 2N6800, 2N6802 PACKAGE DIMENSIONS Dimensions Millimeters Max Min Max 0.355 7.75 9.02 Inch Symbol CD Min 0.305 CH 0.160 .180 4.07 4.57 HD 0.335 0.370 8.51 9.39 LC 0.200 TP 5.08 TP Note 6 LD 0.016 0.021 0.41 0.53 7, 8 LL 0.500 0.750 12.70 19.05 7, 8 LU 0.016 0.019 0.41 0.48 7, 8 1.27 7, 8 L1 0.050 L2 0.250 P .070 Q 6.35 7, 8 1.78 0.050 5 1.27 4 3 2 TL TW 0.029 0.028 0.045 0.034 0.74 0.72 1.14 0.86 TH .009 .041 0.23 1.04 r α 0.010 45° TP 0.25 45° TP 9 6 NOTES: 1. 2. 3. 4. 5. 6. Dimensions are in inches. Millimeters are given for general information only. Beyond radius (r) maximum, j shall be held for a minimum length of .011 (0.028 mm). Dimension TL measured from maximum HD. Outline in this zone is not controlled. Dimension CD shall not vary more than .010 (0.25 mm) in zone P. This zone is controlled for automatic handling. Leads at gauge plane .054 +.001, -.000 (1.37 +0.03, -0.00 mm) below seating plane shall be within .007 (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. 7. LU applies between L1 and L2. LD applies between L2 and L minimum. Diameter is uncontrolled in L1 and beyond LL minimum. 8. All three leads. 9. Radius (r) applies to both inside corners of tab. 10. Drain is electrically connected to the case. 11. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology. T4-LDS-0047, Rev. 3 (121483) ©2012 Microsemi Corporation Page 9 of 9