NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com ES62UXX256 Family ES62UL256 Family 32Kx8 Bit Ultra-Low Power Asynchronous Static RAM Overview The ES62UXX256 is an integrated memory device containing a low power 256 Kbit Static Random Access Memory organized as 32,768 words by 8 bits. The device is fabricated using an advanced CMOS process and NanoAmp’s high-speed/lowpower circuit technology. This device is also designed for very low voltage operation making it quite suitable for battery powered devices having both very low operating and standby currents. The device pinout is compatible with other standard 32k x 8 SRAMs. The ES62UXX256 comes in two speed grades (45 and 25 nsec) and two very broad voltage ranges. Features • Operating Voltage 1.5 to 3.6 Volts Extended Temperature Range -20 o to +80oC Fast Cycle Time TACC < 25 nS @ 3V Very Low Operating Current ICC < 0.8 mA typical at 2V, 1 Mhz Very Low Standby Current ISB = 50 nA typical • • • • FIGURE 1: Operating Envelope Operating Voltage Range 50 Speed/Power Typical ICC (mA) 40 Mhz 40 30 20 Mhz 20 5 Mhz 10 1 Mhz 0 1 2 3 4 VCC (V) Stock No. 23003-03 4/99 1 ES62UL256 Family NanoAmp Solutions FIGURE 2: Pin Configurations 1 28 VCC A12 2 27 WE A7 3 26 A13 A6 4 25 A8 A5 5 24 A9 A4 6 23 A11 A3 7 22 OE A2 8 21 A10 A1 9 20 CE A0 10 19 I/O7 I/O0 11 18 I/O6 I/O1 12 17 I/O5 I/O2 13 16 I/O4 VSS 14 15 I/O3 ES62UL256S (SOP) A14 1 2 3 4 5 6 7 8 9 10 11 12 13 14 OE A11 A9 A8 A13 WE VCC A14 A12 A7 A6 A5 A4 A3 ES62UL256T (TSOP) 28 27 26 25 24 23 22 21 20 19 18 17 16 15 A10 CE I/O7 I/O6 I/O5 I/O4 I/O3 VSS I/O2 I/O1 I/O0 A0 A1 A2 TABLE 1: Pin Functions Pin Name A0-A14 I/O0 - I/O7 CE OE Pin Function Pin Name Address Inputs Data Inputs/Outputs Chip Enable (Active Low) Output Enable (Active Low) WE VCC VSS Pin Function Write Enable (Active Low) Power Ground FIGURE 3: Functional Block Diagram Input/ Address Inputs A0 - A14 Address Decode Logic 32K x 8 Output Data I/O Mux RAM Array and Buffers I/O0 - I/O7 CE WE OE Control Logic TABLE 2: Functional Description I/O0-I/O7 MODE X High Z Standby Standby X Data In Write Active - Standby* Data Out Read Active - Standby* High Z Active Active - Standby* CE WE OE H X L L L H L L H H POWER *The device will consume active power in this mode whenever addresses are changed Stock No. 23003-03 4/99 2 ES62UL256 Family NanoAmp Solutions TABLE 3: Absolute Maximum Ratings* Item Symbol Rating Unit VIN,OUT –0.3 to V CC+0.3 V Voltage on VCC Supply Relative to VSS VCC –0.3 to 4.0 V Power Dissipation PD 500 mW TSTG –40 to 125 o TA -20 to +80 o TSOLDER 260 oC, 10sec (Lead only) o Voltage on any pin relative to VSS Storage Temperature Operating Temperature Soldering Temperature and Time C C C *Stresses greater than those listed above may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. TABLE 4: Operating Characteristics (Over the Specified Temperature Range) Item Symbol Supply Voltage VCC Data Retention Voltage VDR Input High Voltage VIH Input Low Voltage VIL Output High Voltage VOH Output Low Voltage Test Conditions CE = VCC Min/Max L Min 1.5 Max 3.6 Min 1.2 Min 0.7VCC Max VCC+0.3 Unit V V V Min –0.3 Max 0.3VCC IOH = 200 µA Min VCC–0.2 V VOL IOL = –200 µA Max 0.2 V Input Leakage Current ILI VIN = 0 to VCC Max 0.5 µA Output Leakage Current ILO OE = VCC or CE = VCC Max 0.5 µA Operating Supply Current (Note 1) ICC2 VIN = VCC or 0V CE = VSS Typ 0.4 * f * V Max 0.5 * f * V Max Standby Current (Note 2) ISB Max 1.0 µA Typical Standby Current (Note 2) ISB Typ 0.05 µA VIN = VCC or 0V tA = 55oC VIN = VCC or 0V tA = 25 oC V mA *Notes Note 1. Operating current is a linear function of operating frequency and voltage. You may calculate operating current using the formula shown with operating frequency (f) expressed in Mhz and operating voltage (V) in volts. Example: The L device operating at 2 Mhz at 2.0 volts will draw a typical current of 0.4*2*2 = 1.6 mA. Note 2. This device assumes a standby mode if CE is disabled (high). It will also automatically go into a standby mode whenever all input signals are quiescent (not toggling) regardless of the state of CE. In order to achieve low standby current in the enabled mode (CE low), all inputs must be within 0.2 volts of either VCC or VSS. Stock No. 23003-03 4/99 3 ES62UL256 Family NanoAmp Solutions TABLE 5: Capacitance Item Symbol Test Condition Input Capacitance CIN I/O Capacitance CI/O Min Max Unit VIN = 0V 5 pF VIN = 0V 5 pF TABLE 6: Timing Test Conditions (Over the Specified Temperature Range) Item Input Pulse Level 0.1VCC to 0.9VCC Input Rise and Fall Time 5nS Input and Output Timing Reference Levels 0.5VCC Output Load CL = 50pF TABLE 7: Read Cycle Timing 3.0-3.6V Item Symbol Min/Max 1.5V Units -45 -25 Read Cycle Time tRC Min 200 45 25 ns Address Access Time tAA Max 200 45 25 ns Chip Enable Access Time tCE Max 200 45 25 ns Output Enable to Valid Output tOE Max 60 15 10 ns Chip Enable to Low-Z output tLZ Min 20 5 5 ns Output Enable to Low-Z Output tOLZ Min 20 5 5 ns Chip Enable to High-Z Output tHZ Output Disable to High-Z Output tOHZ Output Hold from Address Change tOH Min 0 0 0 Max 50 15 10 Min 0 0 0 Max 50 15 10 Min 20 5 5 ns ns ns TABLE 8: Write Cycle Timing 3.0-3.6V Item Symbol Min/Max 1.5V Unit -45 -25 Write Cycle Time tWC Min 200 45 25 ns Chip Enable to End of Write tCW Min 100 35 20 ns Address Valid to End of Write tAW Min 100 35 20 ns Address Set-Up Time tAS Min 0 0 0 ns Write Pulse Width tWP Min 75 25 15 ns Write Recovery Time tWR Min 0 0 0 ns Write to High-Z Output tWHZ Data to Write Time Overlap Min 0 0 0 Max 60 20 15 tDW Min 60 25 15 ns Data Hold from Write Time tDH Min 0 0 0 ns End Write to Low-Z Output tOW Min 20 5 5 ns Stock No. 23003-03 4/99 ns 4 ES62UL256 Family NanoAmp Solutions FIGURE 4: Read Cycle Timing (WE = VIH) tRC A0-A14 tAA tCE tHZ CE tLZ tOHZ tOE OE tOLZ tOH D0-D7 Data Valid FIGURE 5: Write Cycle (1) Timing (OE clock) tWC A0-A14 tWR tAW OE tCW CE tWP WE tWHZ tAS tDW tDH Data Data In tOHZ Data Out Stock No. 23003-03 4/99 High-Z tOW 5 ES62UL256 Family NanoAmp Solutions FIGURE 6: Write Cycle (2) Timing (OE fixed) tWC A0-A14 tWR tAW tCW CE tWP tAS tOH WE tDH tDW Data Valid Data In tWHZ tOW High-Z Data Out TABLE 9: Ordering Information Part Number Package Temperature Range Voltage Range Speed (@ 3V+) ES62UL256-45TC 28 pin TSOP -20 to +80 oC 1.5 to 3.6 V 45 ns -20 to +80 oC 1.5 to 3.6 V 45 ns -20 to +80 oC 1.5 to 3.6 V 25 ns -20 to +80 oC 1.5 to 3.6 V 25 ns ES62UL256-45SC ES62UL256-25TC 28 pin SOP 28 pin TSOP ES62UL256-25SC 28 pin SOP TABLE 10: Revision History Revision # Date Change Description 01 Nov. 1, 1997 Initial Formal Release 02 Feb. 1, 1998 Corrected Temperature Range for Dynamic Testing 03 Apr. 23, 1999 Eliminated ULL family, Changed UL voltage range to 1.5 to 3.6 Stock No. 23003-03 4/99 6