NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com EM128C08 EM128C08 Family 128Kx8 Bit Ultra-Low Power Asynchronous Static RAM Overview Features The EM128C08 is an integrated memory device containing a low power 1 Mbit Static Random Access Memory organized as 131,072 words by 8 bits. The device is fabricated using NanoAmp’s advanced CMOS process and high-speed/lowpower circuit technology. This device is designed for very low voltage operation making it quite suitable for battery powered devices. It is also designed for both very low operating and standbycurrents. The device pinout is compatible with other standard 128Kx8 SRAMs. • • • • • • • Extremely Wide Operating Voltage 1.5 to 3.6 Volts Extended Temperature Range Standard: -20 o to +80oC Fast Cycle Time Standard: < 70 ns @ 3 Volts -10: < 100 ns @ 3 Volts Very Low Operating Current ICC < 1 mA maximum at 2V, 1 Mhz Very Low Data Rentention Voltage 1.2 Volts Minimum Very Low Standby Current 1 µA max. @ 55oC 32-Pin TSOP, STSOP, SOP and 48-Pin BGA Packages Available FIGURE 1: Operating Envelope 20 14 Mhz 15 Typical ICC (mA) 10 Mhz 10 5 Mhz 5 2.5 Mhz 1 Mhz 0 1 2 3 4 VCC (V) Stock No. 23005-07 6/99 1 NanoAmp Solutions EM128C08 1 32 VCC A16 2 31 A15 A14 3 30 CE2 A12 4 29 WE A7 5 28 A13 A6 6 27 A8 A5 7 26 A9 A4 8 25 A11 A3 9 24 OE A2 10 23 A10 A1 11 22 CE1 A0 12 21 D7 D0 13 20 D6 D1 14 19 D5 D2 15 18 D4 VSS 16 17 D3 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 A11 A9 A8 A13 WE CE2 A15 VCC NC A16 A14 A12 A7 A6 A5 A4 EM12808 SOP NC EM128C08 STSOP, TSOP 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 OE A10 CE1 D7 D6 D5 D4 D3 VSS D2 D1 D0 A0 A1 A2 A3 FIGURE 1: Pin Configurations 1 2 3 4 5 6 A A5 A7 A16 VCC WE B A4 A6 A14 A15 A13 A11 C NC A12 NC NC CE2 A8 D NC NC NC NC NC NC E NC NC NC NC NC NC F A1 D1 NC NC D5 CE1 G A3 A0 D2 D4 D7 OE H A2 D0 VSS D3 D6 A10 A9 48 Pin BGA (top) 7mm x 9mm FIGURE 2: Functional Block Diagram Address Inputs A0 - A16 Address Decode Logic CE1 CE2 WE OE Control Logic Input/ Data I/O Output Mux and D0 - D7 Buffers 128K x 8 RAM Array TABLE 1: Pin Description Pin Name Pin Function Pin Name Pin Function A0-A16 Address Inputs WE Write Enable (Active Low) D0-D7 Data Inputs/Outputs VCC Power CE1 Chip Enable (Active Low) VSS Ground CE2 Chip Enable (Active High) NC Not Connected (Do not connect signal) OE Output Enable (Active Low) TABLE 2: Functional Description CE1 CE2 WE OE D0-D7 MODE POWER H X X X High Z Standby Standby X L X X High Z Standby Standby L H L X Data In Write Active -> Standby* L H H L Data Out Read Active -> Standby* L H H H High Z Active Standby* *The device will consume active power in this mode whenever addresses are changed Stock No. 23005-07 6/99 2 NanoAmp Solutions EM128C08 TABLE 3: Absolute Maximum Ratings* Item Symbol Rating Unit Voltage on any pin relative to V SS VIN,OUT –0.3 to VCC+0.3 V Voltage on VCC Supply Relative to V SS VCC –0.3 to 4.0 V Power Dissipation PD 500 mW Storage Temperature TSTG –40 to +125 o -20 to +80 o Operating Temperature TA C C *Stresses greater than those listed above may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. TABLE 4: Operating Characteristics (Over the Specified Temperature Range) EM128C08 Item Symbol Test Conditions Unit Min. Max. 1.5 3.6 Operating Supply Voltage VCC Data Retention Voltage VDR Input High Voltage VIH 0.7VCC VCC+0.3 V Input Low Voltage VIL –0.3 0.3*VCC V Output High Voltage VOH IOH = -0.1mA Output Low Voltage VOL IOL = 0.1mA 0.2*VCC V Input Leakage Current ILI VIN = 0 to V CC 0.5 µA Output Leakage Current ILO OE or CE1 = VCC or CE2 = 0 0.5 µA Operating Supply Current (Note 1) ICC VIN = VCC or 0V CE1 = 0 and CE2 = V CC 0.5*f*V mA VIN=VCC or 0V, tA=25 oC 0.2 Standby Current (Note 2), and Data Retention Current ISB,IDR CE1 = VCC or CE2 = 0 1.2 V V 0.8*VCC V VIN=VCC or 0V, tA=55 oC 1 VIN=VCC or 0V, tA=80 oC 10 µA Note 1. Operating current is a linear function of operating frequency and voltage. You may calculate operating current using the formula shown with operating frequency (f) expressed in Mhz and operating voltage (V) in volts. Example: Operating at 2 Mhz at 3.0 volts will draw a maximum current of 0.5*2*3 = 3.0 mA. Note 2. This device assumes a standby mode if either CE1 is disabled (high) or CE2 is disabled (low). It will also automatically go into a standby mode whenever all input signals are quiescent (not toggling) regardless of the state of CE1 or CE2. In order to achieve low standby current in the enabled mode (CE1 low and CE2 high), all inputs must be within 0.2 volts of either V CC or VSS. TABLE 5: Capacitance* Item Input Capacitance I/O Capacitance Symbol C IN C I/O Test Condition Max Unit VIN = 0V, f = 1 Mhz, T A = 25oC Min 5 pF VIN = 0V, f = 1 Mhz, T A = 25oC 5 pF Note: These parameters are verified in device characterization and are not 100% tested Stock No. 23005-07 6/99 3 NanoAmp Solutions EM128C08 TABLE 6: Timing Test Conditions Item Input Pulse Level 0.1VCC to 0.9 VCC Input Rise and Fall Time 5ns Input and Output Timing Reference Levels 0.5VCC Operating Temperature - Standard Version -40 to +85 oC Operating Temperature - Commercial Version -20 to +80 oC Output Load CL = 50pF TABLE 7: Timing - EM128C08 (Standard Version) Only 1.5 to 3.6 V 1.8 to 3.6 V 2.7 to 3.6 V 3.0 to 3.6 V Item Symbol Unit Min Max Max 200 Min Max Max tRC Address Access Time tAA 500 200 85 70 ns Chip Enable Access Time tCE 500 200 85 70 ns Output Enable to Valid Output tOE 100 50 20 20 ns Chip Enable to Low-Z output tLZ 0 0 0 0 ns Output Enable to Low-Z Output tOLZ 0 0 0 0 ns Chip Disable to High-Z Output tHZ 0 100 0 50 0 20 0 20 ns Output Disable to High-Z Output tOHZ 0 100 0 50 0 20 0 20 ns Output Hold from Address Change tOH 10 10 10 10 ns Write Cycle Time tWC 500 200 85 70 ns Chip Enable to End of Write tCW 500 200 85 70 ns Address Valid to End of Write tAW 500 200 85 70 ns Address Set-Up Time tAS 0 0 0 0 ns Write Pulse Width tWP 250 100 40 35 ns Write Recovery Time tWR Write to High-Z Output tWHZ 0 Data to Write Time Overlap tDW 200 80 40 30 ns Data Hold from Write Time tDH 0 0 0 0 ns End Write to Low-Z Output tOW 10 10 10 10 ns 0 50 85 Min Read Cycle Time Stock No. 23005-07 6/99 500 Min 0 0 40 70 0 0 20 0 ns 0 ns 20 ns 4 NanoAmp Solutions EM128C08 TABLE 8: Timing - EM128C08-10 Version 1.5 to 3.6 V 1.8 to 3.6 V 2.7 to 3.6 V 3.0 to 3.6 V Item Symbol Unit Min Max 500 Min Max 300 Min Max Max Read Cycle Time tRC Address Access Time tAA 500 300 120 100 ns Chip Enable Access Time tCE 500 300 120 100 ns Output Enable to Valid Output tOE 100 60 25 25 ns Chip Enable to Low-Z output tLZ 0 0 0 0 ns Output Enable to Low-Z Output tOLZ 0 0 0 0 ns Chip Disable to High-Z Output tHZ 0 100 0 60 0 25 0 25 ns Output Disable to High-Z Output tOHZ 0 100 0 60 0 25 0 25 ns Output Hold from Address Change tOH 10 10 10 10 ns Write Cycle Time tWC 500 300 120 100 ns Chip Enable to End of Write tCW 500 300 120 100 ns Address Valid to End of Write tAW 500 300 120 100 ns Address Set-Up Time tAS 0 0 0 0 ns Write Pulse Width tWP 300 100 50 40 ns Write Recovery Time tWR Write to High-Z Output tWHZ 0 Data to Write Time Overlap tDW 300 80 40 30 ns Data Hold from Write Time tDH 0 0 0 0 ns End Write to Low-Z Output tOW 10 10 10 10 ns 0 120 Min 0 100 0 60 100 0 0 25 0 ns 0 ns 25 ns FIGURE 3: Read Cycle Timing (WE = VIH) tRC A0-A16 tAA tHZ tCE CE1/CE2 Enable Valid tLZ tOHZ tOE OE tOLZ D0-D7 Stock No. 23005-07 6/99 tOH Data Valid 5 NanoAmp Solutions EM128C08 FIGURE 4: Write Cycle Timing (OE clock) tWC A0-A16 tWR tAW OE tCW Enable Valid CE1/CE2 tWP WE tWHZ tAS tDH tDW Data Data In tOHZ tOW High-Z Data Out FIGURE 5: Write Cycle Timing (OE fixed) tWC A0-A16 tWR tAW tCW CE1/CE2 Enable Valid tWP tAS tOH WE tDH tDW Data Valid Data In tWHZ Data Out Stock No. 23005-07 6/99 tOW High-Z 6 NanoAmp Solutions EM128C08 TABLE 9: Ordering Information Part Number Package Temperature Range Voltage Range Speed (@ 3V+) EM128C08S 32 pin SOP -20 to +80 oC EM128C08T 32 pin TSOP EM128C08N 32 pin STSOP EM128C08B 48 pin BGA EM128C08S-10 32 pin SOP EM128C08T-10 32 pin TSOP EM128C08N-10 32 pin STSOP EM128C08B-10 48 pin BGA 1.5 to 3.6 V 70 ns o 1.5 to 3.6 V 70 ns o 1.5 to 3.6 V 70 ns o 1.5 to 3.6 V 70 ns o 1.5 to 3.6 V 100 ns o 1.5 to 3.6 V 100 ns o 1.5 to 3.6 V 100 ns o 1.5 to 3.6 V 100 ns -20 to +80 C -20 to +80 C -20 to +80 C -20 to +80 C -20 to +80 C -20 to +80 C -20 to +80 C TABLE 10: Revision History Revision # Date 01 Nov. 1, 1997 Initial Formal Release 02 Feb. 2, 1998 Corrected Miscellaneous Errata Modified Cycle Time and Related Parameters from 150 to 200 nS at 1.8 volts 03 Feb. 15, 1998 Added SOP option, Increased standby current 04 Apr. 1, 1998 Clarified CE2 Timing in Figures 3 to 5 Modified Operating Envelope Figure 05 Sep. 1, 1998 Reduced product versions to Standard and Commercial Added BGA option, Extended “standard” voltage range to 1.5 Volts min. 06 May 6, 1999 Standardized on voltage range of 1.5 to 3.6 volts Standardized on temperature range of -20 to 80 oC 07 June 3, 1999 Revised specifications to show -10 instead of “C” for 100 ns part Stock No. 23005-07 6/99 Change Description 7