NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com EM033C08 EM033C08 Low Power 32Kx8 SRAM in a 32 pin ROM Pinout Compatible Package Overview Features The EM033C08 is an integrated memory device containing a low power 256 Kbit Static Random Access Memory organized as 32,768 words by 8 bits. The device is fabricated using an advanced CMOS process and NanoAmp’s high-speed/lowpower circuit technology. This device is designed to be quite effective in battery powered products with it’s very low operating and standby currents. It is also capable of full operation at voltages as low as 1.5 volts. The device pinout is fully compatible with NanoAmp’s EM02R2XX family of Combination RAM and ROM products making it very easy to substitute an SRAM only device where the ROM is unneccessary in the application. This device is extremely stable over broad temperature and voltage ranges. • Extended Operating Voltage Range 1.5 to 3.6 V • Very Low Standby Voltage 1.2 V • Extended Temperature Range -20o to +80oC • Fast Cycle Time 100 ns (@ 2.7V) • Very Low Operating Current ICC < 1 mA typical at 3V, 1 Mhz • Very Low Standby Current ISB = 100 nA typical • Available in 32-pin STSOP or TSOP package FIGURE 1: Pin Configuration A11 A9 A8 A13 A14 NC CE VCC WE NC NC A12 A7 A6 A5 A4 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 EM033C08 STSOP, TSOP TABLE 1: Pin Descriptions 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 OE A10 NC D7 D6 D5 D4 D3 VSS D2 D1 D0 A0 A1 A2 A3 Pin Name A0-A14 D0-D7 CE OE WE VCC VSS NC Pin Function Address Inputs Data Inputs/Outputs Chip Enable (Active Low) Output Enable (Active Low) Write Enable (Active Low) Power Ground Not Connected (Floating) FIGURE 2: Operating Envelope 8 Mhz Typical ICC (mA) 8 6 5 Mhz 4 2.5 Mhz 2 1 Mhz 0 0 1 2 3 4 VCC (V) Stock No. 23087-01 12/98 1 EM033C08 NanoAmp Solutions FIGURE 3: Functional Block Diagram Input/ Address Inputs A0 - A14 Address Output 32K x 8 Decode Mux RAM Array Logic Data I/O and Buffers D0 - D7 CE WE OE Control Logic FIGURE 4: Functional Description CE WE OE D0-D7 MODE POWER H X X High Z Standby Standby L H H High Z Standby Standby* L H L Data Out READ Active -> Standby* L L X Data In WRITE Active -> Standby* *The device will consume active power in this mode whenever addresses are changed TABLE 2: Absolute Maximum Ratings* Item Symbol Rating Unit VIN,OUT –0.3 to V CC+0.3 V Voltage on VCC Supply Relative to VSS Power Dissipation VCC –0.3 to 4.6 V PD 500 mW Storage Temperature TSTG –40 to +125 oC TA -20 to +80 oC Voltage on any pin relative to VSS Operating Temperature - Extended Commercial *Stresses greater than those listed above may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. Stock No. 23087-01 12/98 2 EM033C08 NanoAmp Solutions TABLE 3: Operating Characteristics (Over specified temperature range) Item Symbol Test Conditions Min. Max. Unit 1.5 3.6 V 1.2 3.6 V Supply Voltage VCC Data Retention Voltage VDR Input High Voltage VIH 0.7VCC VCC+0.3 V Input Low Voltage VIL –0.3 0.3VCC V Output High Voltage VOH IOH = 200 µA Output Low Voltage VOL IOL = –200 µA 0.2 V CE = VCC VCC–0.2 V Input Leakage Current ILI VIN = 0 to V CC 1 µA Output Leakage Current ILO OE = V IH or CE = 1 1 µA Operating Supply Current (Note 1) ICC VIN = VCC or 0V, CE = 0 0.3 * f * V mA Standby Current (Note 2) ISB VIN = VCC or 0V 10 µA Notes: Note 1. Operating current is a linear function of frequency and voltage. You may calculate operating current using the formula shown with operating frequency (f) expressed in Mhz and operating voltage (V) in volts. Example: Operating at 2 Mhz and 2.0 volts will draw a maximum current of 0.3*2*2 = 1.2 mA. Note 2. This device assumes a standby mode whenever Chip Enable (CE) is disabled (high). It will also automatically go into a standby mode whenever all input signals are quiescent (not toggling) whenever an access or write cycle is completed regardless of the state CE. In order to achieve low standby current all input levels must be within 0.2 volts of either V CC or GND. TABLE 4: Capacitance* Item Symbol Test Condition Input Capacitance C IN I/O Capacitance C I/O Min Max Unit VIN = 0V, f = 1 Mhz, T A = 25oC 5 pF VIN = 0V, f = 1 Mhz, T A = 25oC 5 pF Note: These parameters are verified in device characterization and are not 100% tested TABLE 5: Timing Test Conditions Item Input Pulse Level Input Rise and Fall Time Input and Output Timing Reference Levels Output Load Operating Temperature (Unless otherwise stated) Stock No. 23087-01 12/98 0.1VCC to 0.9 VCC 5ns 0.5VCC CL = 30pF -20 to +80 oC 3 EM033C08 NanoAmp Solutions TABLE 6: Timing Item Symbol Min/Max 1.5V 1.8V 2.4V 2.7-3.6V Units Read Cycle Time tRC Min 750 250 150 100 ns Address-Chip Enable Setup Time tASC Min -80 -40 -30 -20 ns Address-Chip Enable Hold Time tAHC Min 600 200 120 75 ns Address Access Time tAA Max 750 250 150 100 ns Chip Enable Access Time tCE Max 750 250 150 100 ns Output Enable to Valid Output tOE Max 250 70 50 30 ns Chip Enable to Low-Z output tLZ Min 0 0 0 0 ns Output Enable to Low-Z Output tOLZ ns Chip Enable to High-Z Output tHZ Min 0 0 0 0 Min 0 0 0 0 Max 100 50 40 25 Min 0 0 0 0 Max 100 50 40 25 ns Output Disable to High-Z Output tOHZ Output Hold from Address Change tOH Min 40 20 15 10 ns Write Cycle Time tWC Min 750 250 150 100 ns Chip Enable to End of Write tCW Min 750 250 150 100 ns Address Valid to End of Write tAW Min 750 250 150 100 ns Address Set-Up Time tAS Min 0 0 0 0 ns Write Pulse Width tWP Min 400 150 75 50 ns Write Recovery Time tWR Min 0 0 0 0 ns Write to High-Z Output tWHZ Data to Write Time Overlap ns Min 0 0 0 0 Max 150 70 50 30 tDW Min 400 150 75 50 ns Data Hold from Write Time tDH Min 75 35 20 15 ns End Write to Low-Z Output tOW Min 40 20 15 10 ns ns FIGURE 5: Read Cycle Timing (WE = VIH) tRC A0-A14 tAA tAHC tASC CE tCS tOE OE tOLZ tLZ D0-D7 Stock No. 23087-01 12/98 tHZ tOHZ tOH Data Valid 4 EM033C08 NanoAmp Solutions FIGURE 6: Write Cycle Timing (OE fixed) tWC A0-A14 tWR tAW tCW CE tASC tAHC tAS tOH tWP WE tDH tDW Data Valid Data In tOW tWHZ High-Z Data Out FIGURE 7: Write Cycle Timing (OE clock) tWC A0-A14 tASC tAHC tWR OE tAW tCW CE tWP WE tWHZ tAS tDW tDH Data Data In tOHZ tOW High-Z Data Out Stock No. 23087-01 12/98 5 EM033C08 NanoAmp Solutions TABLE 7: Ordering Information Part Number* Package Temperature Range Voltage Range Speed (@ 2.7V+) EM033C08N 32 pin STSOP -20 to +80oC 1.5 to 3.6 V 100 ns 1.5 to 3.6 V 100 ns EM033C08T 32 pin TSOP o -20 to +80 C * Please use this part number when ordering this product. This number will be marked on the device package. TABLE 8: Revision History Revision # 01 Date Dec. 1, 1998 Stock No. 23087-01 12/98 Change Description Initial Release 6