SM5010 series Crystal Oscillator Module ICs NIPPON PRECISION CIRCUITS INC. OVERVIEW FEATURES ■ ■ ■ ■ ■ ■ ina ry The SM5010 series are crystal oscillator module ICs, that incorporate oscillator and output buffer circuits. High-frequency capacitors and feedback resistors are built-in, eliminating the need for external components to make a stable fundamental-harmonic oscillator. Inverter amplifier feedback resistor built-in Capacitors CG, CD built-in Standby function Power-save pull-up resistor built-in (5010CL×) 16 mA (VDD = 4.5 V) drive capability (5010AN×, AK×, BN×, BK×, CL×, DN×) 4 mA (VDD = 4.5 V) drive capability (5010AH×, BH×) SERIES CONFIGURATION 3V operating Version 1 ■ ■ ■ ■ ■ Output three-state function 2.7 to 5.5 V supply voltage Oscillator frequency output (fO, fO/2, fO/4, fO/8 determined by internal connection) 8-pin SOP (SM5010×××S) Chip form (CF5010×××) Built-in capacitance 5V operating Output Output R e c o m m e n d e d Output R e c o m m e n d e d Output frequency load load operating operating current frequency frequency (max) (max) [mA] rang e [MHz] rang e [MHz] [pF] [pF] 15 TTL CMOS No fO /2 fO /4 15 30 SM5010AN4S fO /8 15 30 50 30 16 SM5010AK1S fO – – 15 30 16 SM5010AH1S fO 15 16 15 30 4 SM5010AH2S fO /2 15 16 15 30 4 SM5010AH3S fO /4 15 16 15 30 4 – TTL CMOS No SM5010AH4S fO /8 15 16 15 30 4 – TTL CMOS No SM5010BN1S fO 15 30 50 30 16 820 TTL CMOS No SM5010BN2S fO /2 15 30 50 30 16 820 TTL CMOS/TTL No SM5010BN3S fO /4 15 30 50 30 16 820 TTL CMOS/TTL No SM5010BN4S fO /8 15 30 50 30 16 820 TTL CMOS/TTL No lim 30 pre 30 – S t a n d by function SM5010AN3S 50 16 Output duty level SM5010AN2S 50 30 CD [pF] fO 30 50 CG [pF] Input level (5V) SM5010AN1S 15 30 RD [ Ω] 16 – TTL CMOS/TTL No 16 – TTL CMOS/TTL No – TTL CMOS/TTL No – TTL TTL No – TTL CMOS No – TTL CMOS No TBD SM5010BK1S fO – – 15 30 16 820 TTL TTL No SM5010BH1S fO 15 16 15 30 4 820 TTL CMOS No SM5010BH2S fO /2 15 16 15 30 4 820 TTL CMOS No SM5010BH3S fO /4 15 16 15 30 4 820 TTL CMOS No SM5010BH4S fO /8 15 16 15 30 4 820 TTL CMOS No SM5010CL1S fO 15 30 50 30 16 – CMOS CMOS Yes SM5010CL2S fO /2 15 30 50 30 16 – CMOS CMOS Yes SM5010CL3S fO /4 15 30 50 30 16 – CMOS CMOS Yes SM5010CL4S fO /8 15 30 50 30 16 – CMOS CMOS Yes SM5010DN1S fO 15 30 50 30 16 820 TTL CMOS No 1. Chip form devices have designation CF5010 ×××. Note: Recommended operating frequency is not the guaranteed value but is measured using NPC’s standard crystal. NIPPON PRECISION CIRCUITS—1 SM5010 series ORDERING INFORMATION P ackag e S M 5 0 1 0 ×××S 8-pin SOP C F 5 0 1 0 ×××–1 Chip form PACKAGE DIMENSIONS (Unit:mm) • 8-pin SOP ina ry D e vice 0.15 + 0.1 lim 0.695typ 0.4 0.2 6.2 0.3 4.4 0.2 − 0.05 1.5 0.1 0.05 0.05 5.2 0.3 1.27 0.10 0.12 M pre 0.4 0.1 0 to 10 NIPPON PRECISION CIRCUITS—2 SM5010 series PAD LAYOUT PINOUT (Unit:µm) (Top view) Q (920,1180) ina ry VDD HA5010 Y (0,0) INH XT XT VSS X Chip size: 0.92 × 1.18 mm Chip thickness: 300 ± 30 µm Chip base: V D D level INH 1 8 VDD XT 2 7 NC XT 3 6 NC VSS 4 5 Q PIN DESCRIPTION and PAD DIMENSIONS Name I/O 1 INH I 2 XT 3 XT 4 VSS 5 Q 6 NC 7 NC 8 VDD P ad dimensions [µm] Description X Y Output state control input. High impedance when LOW . In the case of the 5 0 1 0 C L ×, the oscillator stops and Pow er-saving pull-up resistor built in. 195 174.4 385 174.4 575 174.4 lim Number I Amplifier input. O Amplifier output. Cr ystal oscillator connection pins. Cr ystal oscillator connected between XT and X T – Ground O Output. Output frequency (f O , fO /2, fO /4, fO /8) determined by internal connection 765 174.4 757.6 1017.6 – – No connection – – No connection – – – Supply voltage 165.4 1014.6 pre BLOCK DIAGRAM VDD VSS XT CG XT Rf CD RD 1/2 1/2 1/2 Q INH NIPPON PRECISION CIRCUITS—3 SM5010 series SPECIFICATIONS Absolute Maximum Ratings VSS = 0 V P arameter Symbol Condition Rating Unit VDD −0.5 to 7.0 V Input voltage range V IN −0.5 to V D D + 0.5 V Output voltage range VOUT Operating temperature range T opr Storage temperature range T stg Output current IO U T ina ry Supply voltage range −0.5 to V D D + 0.5 V −40 to 85 °C Chip form −65 to 150 8-pin SOP −55 to 125 5010 ×H × 10 5010 ×N ×, ×K ×, CL × 25 °C mA Pow er dissipation PD 8-pin SOP 500 mW Soldering temperature T sld 8-pin SOP 255 °C Soldering time tsld 8-pin SOP 10 s Recommended Operating Conditions 3V operation VSS = 0 V Symbol Series ×N × Supply voltage VDD ×H × CL× ×N × Input voltage V IN typ max 2.7 – 3.6 2.7 – 3.6 2.7 – 3.6 VSS – VDD – VDD VSS – VDD − 10 – + 70 ×H × 2 ≤ f ≤ 30 MHz, C L ≤ 15 p F 2 ≤ f ≤ 16 MHz, C L ≤ 15 p F − 10 – + 70 CL× 2 ≤ f ≤ 30 MHz, C L ≤ 15 p F − 20 – + 80 pre TO P R 2 ≤ f ≤ 30 MHz, C L ≤ 15 p F 2 ≤ f ≤ 30 MHz, C L ≤ 15 p F min VSS CL× Operating temperature 2 ≤ f ≤ 30 MHz, C L ≤ 15 p F 2 ≤ f ≤ 16 MHz, C L ≤ 15 p F Rating 2 ≤ f ≤ 16 MHz, C L ≤ 15 p F 2 ≤ f ≤ 30 MHz, C L ≤ 15 p F ×H × ×N × 5V operation Condition lim P arameter Unit V V °C VSS = 0 V P arameter Symbol Series ×N × Supply voltage VDD ×K × ×H × CL× ×N × Input voltage V IN ×K × ×H × CL× ×N × Operating temperature TO P R ×K × ×H × CL× Condition Rating min typ max 2 ≤ f ≤ 30 MHz, C L ≤ 50 p F 2 ≤ f ≤ 30 MHz, C L ≤ 15 p F 4.5 – 5.5 4.5 – 5.5 2 ≤ f ≤ 30 MHz, C L ≤ 15 p F 2 ≤ f ≤ 30 MHz, C L ≤ 50 p F 4.5 – 5.5 4.5 – 5.5 2 ≤ f ≤ 30 MHz, C L ≤ 50 p F 2 ≤ f ≤ 30 MHz, C L ≤ 15 p F VSS – VDD VSS – VDD 2 ≤ f ≤ 30 MHz, C L ≤ 15 p F 2 ≤ f ≤ 30 MHz, C L ≤ 50 p F VSS – VDD VSS – VDD 2 ≤ f ≤ 30 MHz, C L ≤ 50 p F 2 ≤ f ≤ 30 MHz, C L ≤ 15 p F − 40 – + 85 − 40 – + 85 2 ≤ f ≤ 30 MHz, C L ≤ 15 p F 2 ≤ f ≤ 30 MHz, C L ≤ 50 p F − 40 – + 85 − 40 – + 85 Unit V V °C NIPPON PRECISION CIRCUITS—4 SM5010 series Electrical Characteristics 5010×N× series 3 V operation: VDD = 2.7 to 3.6 V, VSS = 0 V, Ta = −10 to 70 °C unless otherwise noted. Symbol HIGH-level output voltage VOH L O W -level output voltage VOL Rating Condition min Q: Measurement cct 1, V D D = 2.7 V, IO H = 8 m A Q: Measurement cct 2, V D D = 2.7 V, IO L = 8 m A Q: Measurement cct 2, I N H = L O W , V D D = 3.6 V, V O H = V D D Q: Measurement cct 2, I N H = L O W , V D D = 3.6 V, V O L = V S S Output leakage current IZ HIGH-level input voltage V IH INH L O W -level input voltage V IL INH typ max ina ry P arameter Unit 2.1 2.4 – V V – 0.3 0.4 – – 10 – – 10 2.0 – – V – – 0.5 V µA 5010×N 1 Measurement cct 3, load cct 1, I N H = open, C L = 15 p F, f = 30 M H z 5010×N 2 TBD Current consumption ID D I N H pull-up resistance RUP1 Measurement cct 4 – 100 – kΩ Feedback resistance Rf Measurement cct 5 – 200 – kΩ Oscillator amplifier output resistance RD Design value – 820 – Ω CG Design value, determined by the internal w afer pattern 5010×N 3 mA 5010×N 4 Built-in capacitance CD TBD 5 0 1 0 A ××, 5010B×× lim 5010×N×, ×K× series 5 0 1 0 B ×× pF pF 5 V operation: VDD = 4.5 to 5.5 V, VSS = 0 V, Ta = −40 to 85 °C unless otherwise noted. P arameter Symbol Rating Condition min HIGH-level output voltage VOH Q: Measurement cct 1, V D D = 4.5 V, IO H = 16 m A L O W -level output voltage VOL Q: Measurement cct 2, V D D = 4.5 V, IO L = 16 m A Q: Measurement cct 2, I N H = L O W , V D D = 5.5 V, V O H = V D D IZ HIGH-level input voltage V IH Q: Measurement cct 2, I N H = L O W , V D D = 5.5 V, V O L = V S S INH L O W -level input voltage V IL INH pre Output leakage current Current consumption ID D Measurement cct 3, load cct 2, I N H = open, C L = 50 p F, f = 30 M H z Measurement cct 3, load cct 1, I N H = open, C L = 15 p F, f = 30 M H z typ max Unit 3.9 4.2 – V – 0.3 0.4 V – – 10 – – 10 µA 2.0 – – V – – 0.8 V 5010×N 1 5010×N 2 5010×N 3 TBD 5010×N 4 mA 5010×K × I N H pull-up resistance RUP1 Measurement cct 4 – 100 – kΩ Feedback resistance Rf Measurement cct 5 – 200 – kΩ Oscillator amplifier output resistance RD Design value 5 0 1 0 B ×× – 820 – Ω CG Design value, determined by the internal w afer pattern 5 0 1 0 A ××, 5010B×× Built-in capacitance CD TBD pF pF NIPPON PRECISION CIRCUITS—5 SM5010 series 5010×H× series 3 V operation: VDD = 2.7 to 3.6 V, VSS = 0 V, Ta = −10 to 70 °C unless otherwise noted. Rating P arameter Symbol Condition Unit min typ max 2.1 2.4 – VOH Q: Measurement cct 1, V D D = 2.7 V, IO H = 2 m A L O W -level output voltage VOL Q: Measurement cct 2, V D D = 2.7 V, IO L = 2 m A – 0.3 0.5 Q: Measurement cct 2, I N H = L O W , V D D = 3.6 V, V O H = V D D – – 10 Q: Measurement cct 2, I N H = L O W , V D D = 3.6 V, V O L = V S S – – 10 2.0 – – V – – 0.5 V Output leakage current IZ HIGH-level input voltage V IH INH L O W -level input voltage V IL INH ina ry HIGH-level output voltage V V µA 5010×H 1 Current consumption ID D Measurement cct 3, load cct 2, I N H = open, C L = 15 p F, f = 16 M H z 5010×H 2 TBD 5010×H 3 mA 5010×H 4 I N H pull-up resistance RUP1 Measurement cct 4 – 100 – kΩ Feedback resistance Rf Measurement cct 5 – 200 – kΩ Oscillator amplifier output resistance RD Design value – 820 – Ω CG Design value, determined by the internal w afer pattern Built-in capacitance TBD 5 0 1 0 A ××, 5010B×× lim CD 5 0 1 0 B ×× pF pF 5 V operation: VDD = 4.5 to 5.5 V, VSS = 0 V, Ta = −40 to 85 °C unless otherwise noted. P arameter Symbol Rating Condition Unit min typ max HIGH-level output voltage VOH Q: Measurement cct 1, V D D = 4.5 V, IO H = 4 m A 3.9 4.2 – V L O W -level output voltage VOL Q: Measurement cct 2, V D D = 4.5 V, IO L = 4 m A – 0.3 0.5 V Q: Measurement cct 2, I N H = L O W , V D D = 5.5 V, V O H = V D D – – 10 Q: Measurement cct 2, I N H = L O W , V D D = 5.5 V, V O L = V S S – – 10 2.0 – – V – – 0.8 V Output leakage current V IH INH pre HIGH-level input voltage IZ L O W -level input voltage Current consumption V IL ID D INH Measurement cct 3, load cct 2, I N H = open, C L = 15 p F, f = 30 M H z µA 5010×H 1 5010×H 2 TBD 5010×H 3 mA 5010×H 4 I N H pull-up resistance RUP1 Measurement cct 4 – 100 – kΩ Feedback resistance Rf Measurement cct 5 – 200 – kΩ Oscillator amplifier output resistance RD Design value 5 0 1 0 B ×× – 820 – Ω CG Design value, determined by the internal w afer pattern 5 0 1 0 A ××, 5010B×× Built-in capacitance CD TBD pF pF NIPPON PRECISION CIRCUITS—6 SM5010 series 5010CL× series 3 V operation: VDD = 2.7 to 3.6 V, VSS = 0 V, Ta = −20 to 80 °C unless otherwise noted. Rating P arameter Symbol Condition Unit min typ max 2.2 2.4 – VOH Q: Measurement cct 1, V D D = 2.7 V, IO H = 8 m A L O W -level output voltage VOL Q: Measurement cct 2, V D D = 2.7 V, IO L = 8 m A – 0.3 0.4 Q: Measurement cct 2, I N H = L O W , V D D = 3.6 V, V O H = V D D – – 10 Q: Measurement cct 2, I N H = L O W , V D D = 3.6 V, V O L = V S S – – 10 Output leakage current IZ HIGH-level input voltage V IH INH L O W -level input voltage V IL INH ina ry HIGH-level output voltage 0.7V D D 0.3V D D V V µA V V 5010CL1 Current consumption ID D Measurement cct 3, load cct 2, I N H = open, C L = 15 p F, f = 30 M H z 5010CL2 TBD 5010CL3 mA 5010CL4 I N H pull-up resistance RUP1 – RUP2 Feedback resistance Rf CG Built-in capacitance 100 – Measurement cct 4 TBD Measurement cct 5 – lim – TBD Design value, determined by the internal wafer pattern CD 200 kΩ MΩ kΩ pF pF 5 V operation: VDD = 4.5 to 5.5 V, VSS = 0 V, Ta = −40 to 85 °C unless otherwise noted. P arameter Symbol Rating Condition Unit min typ max HIGH-level output voltage VOH Q: Measurement cct 1, V D D = 4.5 V, IO H = 16 m A 4.0 4.2 – V L O W -level output voltage VOL Q: Measurement cct 2, V D D = 4.5 V, IO L = 16 m A – 0.3 0.4 V Q: Measurement cct 2, I N H = L O W , V D D = 5.5 V, V O H = V D D – – 10 Q: Measurement cct 2, I N H = L O W , V D D = 5.5 V, V O L = V S S – – 10 Output leakage current IZ V IH INH L O W -level input voltage V IL INH pre HIGH-level input voltage Current consumption I N H pull-up resistance ID D RUP1 Measurement cct 3, load cct 2, I N H = open, C L = 50 p F, f = 30 M H z µA 0.7V D D 0.3V D D Built-in capacitance Rf CG CD V 5010CL1 5010CL2 TBD 5010CL3 mA 5010CL4 – 100 – Measurement cct 4 RUP2 Feedback resistance V Measurement cct 5 Design value, determined by the internal wafer pattern MΩ TBD – 200 TBD kΩ – kΩ pF pF NIPPON PRECISION CIRCUITS—7 SM5010 series Switching Characteristics 5010×N× series 3 V operation: VDD = 2.7 to 3.6 V, VSS = 0 V, Ta = −10 to 70 °C unless otherwise noted. Rating Symbol Condition Unit min typ max ina ry P arameter Output rise time tr1 Measurement cct 6, load cct 2, C L = 15 p F, 0.1V D D to 0.9V D D – 3.0 6.0 ns Output fall time tf1 Measurement cct 6, load cct 2, C L = 15 p F, 0.9V D D to 0.1V D D – 3.0 6.0 ns Measurement cct 6, load cct 2, V D D = 3.0 V, Ta = 25 °C , C L = 15 p F, f = 30MHz 40 – 60 % – – 100 ns – – 100 ns Output duty cycle 1 Duty Output disable delay time tP L Z Output enable delay time tP Z L 1. Determined by the lot monitor. 5010×N×, ×K× series Measurement cct 7, load cct 2, V D D = 3.0 V, Ta = 25 °C , C L = 15 p F 5 V operation (5010×N×): VDD = 4.5 to 5.5 V, VSS = 0 V, Ta = −40 to 85 °C unless otherwise noted. Rating P arameter Symbol tr2 Output rise time Output fall time tf2 tf3 Output duty cycle 1 Duty Output disable delay time tP L Z Output enable delay time tP Z L Unit min typ max C L = 15 p F – 2.0 4.0 C L = 50 p F – 4.0 8.0 C L = 15 p F – 2.0 4.0 C L = 50 p F – 4.0 8.0 Measurement cct 6, load cct 2, V D D = 5.0 V, Ta = 25 °C , C L = 50 p F, f = 30MHz 45 – 55 % – – 100 ns – – 100 ns Measurement cct 6, load cct 2, 0.1V D D to 0.9V D D lim tr3 Condition Measurement cct 6, load cct 2, 0.9V D D to 0.1V D D Measurement cct 7, load cct 2, V D D = 5.0 V, Ta = 25 °C , C L = 15 p F ns ns 1. Determined by the lot monitor. pre 5 V operation (5010AN2, AN3, AN4, BN2, BN3, BN4, ×K×): VDD = 4.5 to 5.5 V, VSS = 0 V, Ta = −40 to 85 °C unless otherwise noted. P arameter Symbol Rating Condition Unit min typ max Output rise time tr4 Measurement cct 6, load cct 1, C L = 15 p F, 0.4V to 2.4V – 1.5 3.0 ns Output fall time tf4 Measurement cct 6, load cct 1, C L = 15 p F, 2.4V to 0.4V – 1.5 3.0 ns Output duty cycle 1 Duty Measurement cct 6, load cct 1, V D D = 5.0 V, Ta = 25 °C , C L = 15 p F, f = 30MHz 45 – 55 % Output disable delay time tP L Z – – 100 ns Output enable delay time tP Z L – – 100 ns Measurement cct 7, load cct 1, V D D = 5.0 V, Ta = 25 °C , C L = 15 p F 1. Determined by the lot monitor. NIPPON PRECISION CIRCUITS—8 SM5010 series 5010×H× series 3 V operation: VDD = 2.7 to 3.6 V, VSS = 0 V, Ta = −10 to 70 °C unless otherwise noted. Rating P arameter Symbol Condition Unit min typ max – 15 30 tr1 Measurement cct 6, load cct 2, C L = 15 p F, 0.1V D D to 0.9V D D Output fall time tf1 Measurement cct 6, load cct 2, C L = 15 p F, 0.9V D D to 0.1V D D – 15 30 ns Measurement cct 6, load cct 2, V D D = 3.0 V, Ta = 25 °C , C L = 15 p F, f = 16MHz 40 – 60 % – – 100 ns – – 100 ns Output duty cycle 1 Duty Output disable delay time tP L Z Output enable delay time tP Z L 1. Determined by the lot monitor. ns ina ry Output rise time Measurement cct 7, load cct 2, V D D = 3.0 V, Ta = 25 °C , C L = 15 p F 5 V operation: VDD = 4.5 to 5.5 V, VSS = 0 V, Ta = −40 to 85 °C unless otherwise noted. Rating P arameter Symbol tr2 Output rise time tr3 tf2 Output fall time Output duty cycle 1 Duty Output disable delay time tP L Z Output enable delay time tP Z L Unit min typ max Measurement cct 6, load cct 2, 0.1V D D to 0.9V D D C L = 15 p F – 5 10 C L = 50 p F – 13 26 Measurement cct 6, load cct 2, 0.9V D D to 0.1V D D C L = 15 p F – 5 10 C L = 50 p F – 13 26 Measurement cct 6, load cct 2, V D D = 5.0 V, Ta = 25 °C , C L = 15 p F, f = 30MHz 45 – 55 % – – 100 ns – – 100 ns lim tf3 Condition Measurement cct 7, load cct 2, V D D = 5.0 V, Ta = 25 °C , C L = 15 p F ns ns pre 1. Determined by the lot monitor. NIPPON PRECISION CIRCUITS—9 SM5010 series 5010CL× series 3 V operation: VDD = 2.7 to 3.6 V, VSS = 0 V, Ta = −20 to 80 °C unless otherwise noted. Rating Symbol tr2 Output rise time tr4 tf2 Output fall time tf4 Output duty cycle 1 Duty Output disable delay time 2 tP L Z time 2 tP Z L Output enable delay Condition Unit min typ max – 2.0 4.0 Measurement cct 6, load cct 2, 0.1V D D to 0.9V D D C L = 15 p F C L = 30 p F – 3.0 6.0 Measurement cct 6, load cct 2, 0.9V D D to 0.1V D D C L = 15 p F – 2.0 4.0 C L = 30 p F – 3.0 6.0 Measurement cct 6, load cct 2, V D D = 3.0 V, Ta = 25 °C , C L = 15 p F, f = 30MHz 45 – 55 % – – 100 ns – – 100 ns ina ry P arameter Measurement cct 7, load cct 2, V D D = 3.0 V, Ta = 25 °C , C L = 15 p F ns ns 1. Determined by the lot monitor. 2. Oscillator stop function is built-in. W h e n I N H goes LOW , normal output stops. W h e n I N H goes HIGH, normal output is not resumed until after the oscillator start-up time has elapsed. 5 V operation: VDD = 4.5 to 5.5 V, VSS = 0 V, Ta = −40 to 85 °C unless otherwise noted. Rating P arameter Symbol tr2 Output rise time Output fall time tf2 tf3 Output duty cycle 1 Duty Output disable delay time 2 tP L Z time 2 tP Z L Output enable delay Unit min typ max Measurement cct 6, load cct 2, 0.1V D D to 0.9V D D C L = 15 p F – 1.5 3.0 C L = 50 p F – 4.0 8.0 Measurement cct 6, load cct 2, 0.9V D D to 0.1V D D C L = 15 p F – 1.5 3.0 C L = 50 p F – 4.0 8.0 Measurement cct 6, load cct 2, V D D = 5.0 V, Ta = 25 °C , C L = 50 p F, f = 30MHz 40 – 60 % – – 100 ns – – 100 ns lim tr3 Condition Measurement cct 7, load cct 2, V D D = 5.0 V, Ta = 25 °C , C L = 15 p F ns ns 1. Determined by the lot monitor. 2. Oscillator stop function is built-in. W h e n I N H goes LOW , normal output stops. W h e n I N H goes HIGH, normal output is not resumed until after the oscillator start-up time has elapsed. pre Current consumption and Output waveform with NPC’s standard crystal Cb L Ca f (MHz) R (Ω) L (mH) Ca (fF) Cb (pF) 30 17.2 4.36 6.46 2.26 R NIPPON PRECISION CIRCUITS—10 SM5010 series FUNCTIONAL DESCRIPTION Standby Function AH, AK, AN, BH, BK, BN, DN series CL series ina ry When INH goes LOW, the output on Q becomes high impedance, but internally the oscillator does not stop. When INH goes LOW, the oscillator stops and the oscillator output on Q becomes high impedance. Version INH AH, AK, AN, BH, BK, BN, DN series HIGH (or open) LOW HIGH (or open) CL series LOW Q Oscillator A n y f O , fO /2, fO /4 or f O /8 output frequency Nor mal operation High impedance Nor mal operation A n y f O , fO /2, fO /4 or f O /8 output frequency Nor mal operation High impedance Stopped Power-save Pull-up Resistance (CL series only) pre lim The INH pull-up resistance changes in response to the input level (HIGH or LOW). When INH goes LOW (standby state), the pull-up resistance becomes large to reduce the current consumption during standby. NIPPON PRECISION CIRCUITS—11 SM5010 series MEASUREMENT CIRCUITS Measurement cct 1 Measurement cct 4 3.0V or 5.0V VDD VDD C1 XT RUP1 = Q VDD IPR (VIL = 0V) ina ry Signal Generator R2 R1 VSS INH VSS RUP2 = VDD VIH (V IH = 0.7V DD) IPR V VIH VIL VOH 0V Q output 2.0V P −P , 10MHz sine wave input signal (3V operation) 3.5V P −P , 10MHz sine wave input signal (5V operation) C1 : 0.001µF R1 : 50Ω R2 : 263Ω (5010×N ×, ×K ×/ 3V operation) 245Ω (5010×N ×, ×K ×/ 5V operation) 1050Ω (5010×H ×/ 3V operation) 975Ω (5010×H ×/ 5V operation) 275Ω (5010CL×/ 3V operation) 250Ω (5010CL×/ 5V operation) A IPR Measurement cct 5 VDD Measurement cct 2 XT Rf = XT IZ, IOL IZ IRf A Q INH VSS A lim VDD VDD IRf VSS V VOH VOL Measurement cct 6 Measurement cct 3 VDD XT X'tal Q XT INH VSS IDD pre A IDD IST A VDD C1 Signal Generator XT R1 Q VSS 2.0V P −P , 30MHz sine wave input signal (3V operation) 3.5V P −P , 30MHz sine wave input signal (5V operation) C1 : 0.001µF R1 : 50Ω Measurement cct 7 VDD Signal Generator Q XT R1 VSS INH R1 : 50Ω NIPPON PRECISION CIRCUITS—12 SM5010 series Load cct 1 Load cct 2 Q output R CL Q output (Including probe capacitance) C L = 15pF : DUTY , ID D , tr , tf R = 400Ω ina ry (Including probe capacitance) CL C L = 15pF : DUTY , ID D , tr1 , tf1 , tr2 , tf2 , tr4 , tf4 C L = 30pF : tr4 , tf4 C L = 50pF : tr3 , tf3 Switching Time Measurement Waveform Output duty level (CMOS) 0.9VDD Q output 0.1VDD 0.9VDD 0.1VDD DUTY measurement voltage (0.5V DD ) TW tr lim Output duty level (TTL) tf Q output 2.4V 2.4V 0.4V 0.4V DUTY measurement voltage (1.4V ) TW tr tf pre Output duty cycle (CMOS) DUTY measurement voltage (0.5V DD) Q output TW T DUTY= TW/ T 100 (%) Output duty cycle (TTL) Q output DUTY measurement voltage (1.4V ) TW T DUTY= TW/ T 100 (%) NIPPON PRECISION CIRCUITS—13 SM5010 series INH ina ry Output Enable/Disable Delay VIH VIL tPZL tPLZ Q output INH input waveform tr = tf 10ns pre lim Note (CL series only) : when the device is in standby, the oscillator stops. When standby is released, the oscillator starts and stable oscillator output occurs after a short delay. NIPPON PRECISION CIRCUITS INC. reserves the right to make changes to the products described in this data sheet in order to improve the design or performance and to supply the best possible products. Nippon Precision Circuits Inc. assumes no responsibility for the use of any circuits shown in this data sheet, conveys no license under any patent or other rights, and makes no claim that the circuits are free from patent infringement. Applications for any devices shown in this data sheet are for illustration only and Nippon Precision Circuits Inc. makes no claim or warranty that such applications will be suitable for the use specified without further testing or modification. The products described in this data sheet are not intended to use for the apparatus which influence human lives due to the failure or malfunction of the products. Customers are requested to comply with applicable laws and regulations in effect now and hereinafter, including compliance with expor t controls on the distribution or dissemination of the products. Customers shall not expor t, directly or indirectly, any products without first obtaining required licenses and approvals from appropriate government agencies. NIPPON PRECISION CIRCUITS INC. NIPPON PRECISION CIRCUITS INC. 4-3, Fukuzumi 2-chome Koto-ku, Tokyo 135-8430, Japan Telephone: +81-3-3642-6661 Facsimile: +81-3-3642-6698 http://www.npc.co.jp/ Email: sales @ npc.co.jp NP0015AE 2000.10 NIPPON PRECISION CIRCUITS—14