TECHNICAL DATA P-CHANNEL J-FET Qualified per MIL-PRF-19500/295 Devices Qualified Level 2N2608 JAN ABSOLUTE MAXIMUM RATINGS (TA = +250C unless otherwise noted) Parameters / Test Conditions Symbol Value Gate-Source Voltage Power Dissipation (1) TA = +250C Operating Junction & Storage Temperature Range (1) Derate linearly 1.71 mW/0C for TA > +250C. VGSS PD Top, Tstg 30 300 -65 to +200 Units V mW 0 C TO-18 (TO-206AA) *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TA = +250C unless otherwise noted) PARAMETERS / TEST CONDITIONS Gate-Source Breakdown Voltage VDS = 0, IG = 1.0 µAdc Gate Reverse Current VDS = 0, VGS = 30 Vdc VDS = 0, VGS = 15 Vdc Drain Current VGS = 0, VDS = 5.0 Vdc Gate-Source Cutoff Voltage VDS = 5.0 V, ID = 1.0 µAdc Magnitude of Small-Signal, Common-Source Short-Circuit Forward Transfer Admittance VGS = 0, VDS = 5.0 Vdc, f = 1.0 kHz Small-Signal, Common-Source Short-Circuit Input Capacitance VGS = 0, VDS = 5.0 Vdc, f = 1.0 MHz Common-Source Spot Noise Figure VGS = 0, VDS = 5.0 Vdc, f = 1.0 kHz BW = 16%, RG = 1.0 megohms, egen = 1.82 mVdc, RL = 470 Ω 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 Symbol Min. V(BR)GSS 30 IGSS Max. Units Vdc 10 7.5 ηAdc IDDSS -1.0 -5.0 mAdc VGS(off) 0.75 6.0 Vdc Yfs2 1,000 4,500 µmho Ciss 10 pF NF 3.0 dB 120101 Page 1 of 1