Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier CORPORATION 3N190 / 3N191 FEATURES ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise specified) • Very High Input Impedance • High Gate Breakdown 3N190-3N191 • Low Capacitance Drain-Source or Drain-Gate Voltage (Note 1) 3N190, 3N191 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Transient Gate-Source Voltage (Note 1 and 2) . . . . . . . ±125V Gate-Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±80V Drain Current (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Storage Temperature . . . . . . . . . . . . . . . . . . . -65oC to +200oC Operating Temperature . . . . . . . . . . . . . . . . . -55oC to +150oC Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300oC Power Dissipation One Side . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW Both Sides . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 525mW Total Derating above 25oC. . . . . . . . . . . . . . . . . . 4.2mW/ oC PIN CONFIGURATION TO-99 NOTE: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. C 2506 D2 S2 G2 D1 S1 G1 ORDERING INFORMATION Part Package Temperature Range 3N190-91 Hermetic TO-99 X3N190-91 Sorted Chips in Carriers -55oC to +150oC -55oC to +150oC ELECTRICAL CHARACTERISTICS (TA = 25oC and VBS = 0 unless otherwise specified) SYMBOL PARAMETER 3N190/91 MIN IGSSR Gate Reverse Current IGSSF Gate Forward Current UNITS TEST CONDITIONS MAX 10 -10 VGS = 40V pA VGS = -40V TA = +125oC -25 BVDSS Drain-Source Breakdown Voltage -40 ID = -10µA BVSDS Source-Drain Breakdown Voltage -40 IS = -10µA, VBD = 0 VGS(th) Threshold Voltage VGS Gate Source Voltage IDSS -2.0 VDS = -15V, ID = -10µA -5.0 V VDS = VGS, I D = -10µA -2.0 -5.0 -3.0 -6.5 VDS = -15V, ID = -500µA Zero Gate Voltage Drain Current -200 VDS = -15V ISDS Source Drain Current -400 rDS(on) Drain-Source on Resistance 300 ohms VDS = -20V, ID = -100µA ID(on) On Drain Current -30.0 mA VDS = -15V, VGS = -10V -5.0 VSD = -15V, VDB = 0 3N190 / 3N191 CORPORATION ELECTRICAL CHARACTERISTICS (Continued) (TA = 25oC and VBS = 0 unless otherwise specified) SYMBOL 3N190/91 MIN MAX 1500 4000 PARAMETER gfs Forward Transconductance (Note 3) Yos Output Admittance 300 Ciss Input Capacitance Output Shorted (Note 5) 4.5 Crss Reverse Transfer Capacitance (Note 5) 1.0 Coss Output Capacitance Input Shorted (Note 5) 3.0 UNITS TEST CONDITIONS µS f = 1kHz VDS = -15V, ID = -10mA pF f = 1MHz SWITCHING CHARACTERISTICS (TA = 25oC and VBS = 0 unless otherwise specified) SYMBOL PARAMETER MIN MAX td(on) Turn On Delay Time 15 tr Rise Time 30 toff Turn Off Time 50 UNITS ns TEST CONDITIONS VDD = -15V, ID = -10mA, RG = RL = 1.4kΩ (Note 5) MATCHING CHARACTERISTICS (TA = 25oC and VBS = 0 unless otherwise specified) 3N188 and 3N190 SYMBOL PARAMETER MIN MAX 0.85 1.0 UNITS TEST CONDITIONS Yfs1 / Yfs2 Forward Transconductance Ratio VGS1-2 Gate Source Threshold Voltage Differential 100 mV VDS = -15V, ID = -500µA ∆VGS1−2 ∆T Gate Source Threshold Voltage Differential Change with Temperature (Note 4) 100 µV/ oC VDS = -15V, ID = -500µA, T = -55oC to +25 oC ∆VGS1−2 ∆T Gate Source Threshold Voltage Differential Change with Temperature (Note 4) 100 µV/ oC VDS = -15V, ID = -500µA T = +25 oC to +125oC NOTES: 1. 2. 3. 4. 5. Per transistor. Approximately doubles for every 10oC increase in TA. Pulse test duration = 300µs; duty cycle ≤3%. Measured at end points, TA and TB. For design reference only, not 100% tested. VDS = -15V, ID = -500µA, f = 1kHz