Monolithic Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier CORPORATION 3N165 / 3N166 FEATURES ABSOLUTE MAXIMUM RATINGS (Note 1) (TA = 25oC unless otherwise specified) • Very High Impedance • High Gate Breakdown • Low Capacitance Drain-Source or Drain-Gate Voltage (Note 2) 3N165. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V 3N166. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Transient Gate-Source Voltage (Note 3) . . . . . . . . . . . . . ±125 Gate-Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±80V Drain Current (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Storage Temperature . . . . . . . . . . . . . . . . . . . -65oC to +200oC Operating Temperature . . . . . . . . . . . . . . . . . -55oC to +150oC Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300oC Power Dissipation One Side . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW Both Sides . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 525mW Total Derating above 25oC. . . . . . . . . . . . . . . . . . 4.2mW/ oC PIN CONFIGURATION BOTTOM VIEW TO-99 D2 S G2 D1 G1 C NOTE: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 0180 2506 C G2 G1 D2 D1 S ORDERING INFORMATION DEVICE SCHEMATIC 1 7 3 Part Package Temperature Range 3N165-66 X3N165-66 Hermetic TO-99 Sorted Chips in Carriers -55oC to +150oC -55oC to +150oC 5 8 4 0190 ELECTRICAL CHARACTERISTICS (TA = 25oC and VBS = 0 unless otherwise specified) SYMBOL PARAMETER IGSSR Gate Reverse Leakage Current IGSSF Gate Forward Leakage Current MIN MAX UNITS 10 -10 -25 TEST CONDITIONS VGS = 40V VGS = -40V pA TA = +125oC IDSS Drain to Source Leakage Current -200 VDS = -20V ISDS Source to Drain Leakage Current -400 VSD = -20V, VDB = 0 ID(on) On Drain Current -5 -30 VGS(th) Gate Source Threshold Voltage -2 -5 VGS(th) Gate Source Threshold Voltage -2 -5 rDS(on) Drain Source ON Resistance 300 mA V VDS = -15V, VGS = -10V VDS = -15V, ID = -10µA VDS = VGS, I D = -10µA ohms VGS = -20V, ID = -100µA 3N165 / 3N166 CORPORATION ELECTRICAL CHARACTERISTICS (Continued) (TA = 25oC and VBS = 0 unless otherwise specified) SYMBOL PARAMETER MIN MAX 1500 3000 gfs Forward Transconductance gos Output Admittance 300 Ciss Input Capacitance 3.0 Crss Reverse Transfer Capacitance 0.7 Coss Output Capacitance 3.0 RE(Yfs) Common Source Forward Transconductance MATCHING CHARACTERISTICS SYMBOL UNITS 1200 TEST CONDITIONS µS VDS = -15V, ID = -10mA, f = 1kHz pF VDS = -15V, ID = -10mA, f = 1MHz (Note 4) µs VDS = -15V, ID = -10mA, f = 100MHz (Note 4) 3N165 PARAMETER MIN MAX 0.90 1.0 UNITS TEST CONDITIONS Yfs1 / Yfs2 Forward Transconductance Ratio VGS1-2 Gate Source Threshold Voltage Differential 100 mV VDS = -15V, ID = -500µA ∆VGS1−2 ∆T Gate Source Threshold Voltage Differential Change with Temperature 100 µV/ oC VDS = -15V, IA = -500µA TA = -55oC to +25 oC NOTES: 1. 2. 3. 4. See handling precautions on 3N170 data sheet. Per transistor. Devices must not be tested at ±125V more than once, nor longer than 300ms. For design reference only, not 100% tested. VDS = -15V, ID = -500µA, f = 1kHz