RED Item No.: 115261 L 1. This specification applies to GaAlAs / GaAlAs LED Chips (substrate removed) 2. Structure 2.1 Mesa structure 2.2 Electrodes 3. Outlines (dimensions in microns) p-side (anode) n-side (cathode) Au alloy Au alloy p-Electrode p-Epitaxy GaAlAs 325 125 Active Layer 180 n-Epitaxy GaAlAs n-Electrode 325 Wire-bond contacts can also be square 4. Electrical and optical characteristics (T=25°C) Parameter Symbol Conditions Forward voltage Reverse current VF IR IF = 20 mA VR = 5 V Luminous intensity Luminous intensity Output power IV IV Φe IF = 10 mA IF = 20 mA IF = 20 mA min 8,0 16,0 1,3 Peak wavelength IF = 20 mA λP power measurement at OSA on gold plate 5. typ max Unit 1,85 2,20 10 11,0 22,0 1,6 V µA mcd mcd mW 670 nm Packing Dice on adhesive film with 1) wire-bond side on top 2) back contact on top 6. Labeling Type Lot No. IV typ min max Quantity © 2004 OSA Opto Light GmbH Tel. +49-(0)30-65 76 26 83 Fax +49-(0)30-65 76 26 81 [email protected]