YELLOW Item No.: 170622 1. This specification applies to GaAsP / GaP LED Chips 2. Structure 2.1 Mesa structure 2.2 Electrodes 3. Outlines (dimensions in microns) p-side (anode) n-side (cathode) Au alloy Au alloy p-Electrode p-Epitaxy GaP n-Epitaxy GaP 110 235 n-Epitaxy GaP 250 n-Substrate GaP 235 n-Electrode Wire bond contacts can also be square 4. Electrical and optical characteristics (T=25°C) Parameter Symbol Forward voltage VF Reverse current IR Luminous intensity * IV Conditions min IF = 2 mA typ max 1,85 2,05 V 10 µA VR = 5 V IF = 2 mA 180 300 dom. wavelength λD IF = 2 mA 590 * On request, wafers will be delivered according to luminous intensity classes Brightness measurement at OSA on gold plate 5. Unit µcd nm Packing Dice on adhesive film with 1) wire bond side on top 2) back contact on top 6. Labeling Type Lot No. IV typ min max Quantity © 2004 OSA Opto Light GmbH Tel. +49-(0)30-65 76 26 83 Fax +49-(0)30-65 76 26 81 [email protected]