OSA 170622

YELLOW
Item No.: 170622
1.
This specification applies to GaAsP / GaP LED Chips
2.
Structure
2.1
Mesa structure
2.2
Electrodes
3.
Outlines (dimensions in microns)
p-side (anode)
n-side (cathode)
Au alloy
Au alloy
p-Electrode
p-Epitaxy GaP
n-Epitaxy GaP
110
235
n-Epitaxy GaP
250
n-Substrate GaP
235
n-Electrode
Wire bond contacts can also be square
4.
Electrical and optical characteristics (T=25°C)
Parameter
Symbol
Forward voltage
VF
Reverse current
IR
Luminous intensity *
IV
Conditions
min
IF = 2 mA
typ
max
1,85
2,05
V
10
µA
VR = 5 V
IF = 2 mA
180
300
dom. wavelength
λD
IF = 2 mA
590
* On request, wafers will be delivered according to luminous intensity classes
Brightness measurement at OSA on gold plate
5.
Unit
µcd
nm
Packing
Dice on adhesive film with 1) wire bond side on top
2) back contact on top
6.
Labeling
Type
Lot No.
IV typ
min
max
Quantity
© 2004
OSA Opto Light GmbH — Tel. +49-(0)30-65 76 26 83 — Fax +49-(0)30-65 76 26 81 — [email protected]