RED Item No.: 194170 1. This specification applies to AlInGaP / GaAs LED Chips 2. Structure 2.1 Mesa structure 2.2 Electrodes 3. Outlines (dimensions in microns) p-side (anode) n-side (cathode) Au alloy or Al Au alloy n-Electrode Epitaxy AlInGaP 120 265 250 p-Substrate GaAs 265 p-Electrode Chip thickness could also be 180 µm or 210 µm Wire-bond contacts can also be square 4. Electrical and optical characteristics (T=25°C) Parameter Symbol Conditions typ max Unit VF IR IF = 20 mA VR = 5 V 1,90 2,30 10 V Luminous intensity * IV IF = 20 mA Peak wavelength IF = 20 mA λp Brightness measurement at OSA on gold plate 20 655 Forward voltage Reverse current 5. min µA mcd nm Packing Dice on adhesive film with 1) wire-bond side on top 2) back contact on top 6. Labeling Type Lot No. IV typ min max Quantity © 2004 OSA Opto Light GmbH Tel. +49-(0)30-65 76 26 83 Fax +49-(0)30-65 76 26 81 [email protected]