OSA 190210

ORANGE
Item No.: 190210
1.
This specification applies to GaAsP / GaP LED Chips
2.
Structure
2.1
Mesa structure
2.2
Electrodes
3.
Outlines (dimensions in microns)
p-side (anode)
n-side (cathode)
Au alloy
Au alloy
p-Electrode
p-Diffusion
n-Epitaxy GaAsP
120
265
n-Epitaxy GaAsP
270
n-Substrate GaP
265
n-Electrode
Wire bond contacts can also be circular or square
4.
Electrical and optical characteristics (T=25°C)
Parameter
Symbol
Conditions
Forward voltage
VF
IF = 20 mA
Reverse current
IR
VR = 5 V
Luminous intensity *
IV
IF = 20 mA
min
2,0
typ
max
2,10
2,50
V
10
µA
3,0
Peak wavelength
λP
IF = 20 mA
635
* On request, wafers will be delivered according to luminous intensity classes
Brightness measurement at OSA on gold plate
5.
Unit
mcd
nm
Packing
Dice on adhesive film with 1) wire bond side on top
2) back contact on top
6.
Labeling
Type
Lot No.
IV typ
min
max
Quantity
© 2004
OSA Opto Light GmbH — Tel. +49-(0)30-65 76 26 83 — Fax +49-(0)30-65 76 26 81 — [email protected]