RED Item No.: 114110 1. This specification applies to GaAlAs / GaAs LED Chips 2. Structure 2.1 Mesa structure 2.2 Electrodes 3. Outlines (dimensions in microns) p-side (anode) n-side (cathode) Au alloy Au alloy n-Electrode n-Epitaxy GaAlAs Active Layer p-Epitaxy GaAlAs 120 265 270 p-Substrate GaAs 265 p-Electrode Wire bond contacts can also be circular or square 4. Electrical and optical characteristics (T=25°C) Parameter Symbol Conditions VF IR IF = 20 mA VR = 5 V Forward voltage Reverse current Luminous intensity * IV IF = 20 mA Peak wavelength IF = 20 mA λP Brightness measurement at OSA on gold plate 5. min 5,5 typ max Unit 1,85 2,10 10 µA 7 655 V mcd nm Packing Dice on adhesive film with 1) wire bond side on top 2) back contact on top 6. Labeling Type Lot No. IV typ min max Quantity © 2004 OSA Opto Light GmbH Tel. +49-(0)30-65 76 26 83 Fax +49-(0)30-65 76 26 81 [email protected]