SOFT ORANGE Item No.: 181282 1. This specification applies to AlInGaP / GaAs LED Chips 2. Structure 2.1 Mesa structure 2.2 Electrodes 3. Outlines (dimensions in microns) p-side (anode) n-side (cathode) Au alloy or Al Au alloy p-Electrode Epitaxy AlInGaP 235 110 250 n-Substrate GaAs 235 n-Electrode Wire bond contacts can also be square 4. Electrical and optical characteristics (T=25°C) Parameter Symbol Conditions VF IR IF = 20 mA VR = 5 V Forward voltage Reverse current min typ max Unit 2,10 2,40 10 µA Luminous intensity * IV IF = 10 mA 65 dom. wavelength IF = 20 mA 605 λD * On request, wafers will be delivered according to luminous intensity classes Brightness measurement at OSA on gold plate 5. V mcd nm Packing Dice on adhesive film with 1) wire bond side on top 2) back contact on top 6. Labeling Type Lot No. IV typ min max Quantity © 2004 OSA Opto Light GmbH Tel. +49-(0)30-65 76 26 83 Fax +49-(0)30-65 76 26 81 [email protected]