RED Item No.: 115260 1. This specification applies to GaAlAs / GaAlAs LED Chips (substrate removed) 2. Structure 2.1 Mesa structure 2.2 Electrodes 3. Outlines (dimensions in microns) p-side (anode) n-side (cathode) Au alloy Au alloy p-Electrode p-Epitaxy GaAlAs 120 265 Active Layer 150 n-Epitaxy GaAlAs n-Electrode 265 Wire bond contacts can also be circular or square 4. Electrical and optical characteristics (T=25°C) Parameter Symbol Conditions VF IR IF = 20 mA VR = 5 V Forward voltage Reverse current IF = 20 mA IF = 10 mA Peak wavelength IF = 20 mA λP Brightness measurement at OSA on gold plate Luminous intensity * 5. min 12 6 IV typ max Unit 1,90 2,30 10 µA 16 8 660 V mcd nm Packing Dice on adhesive film with 1) wire bond side on top 2) back contact on top 6. Labeling Type Lot No. IV typ min max Quantity © 2004 OSA Opto Light GmbH Tel. +49-(0)30-65 76 26 83 Fax +49-(0)30-65 76 26 81 [email protected]